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Synthesis of Uniform alpha-Si3N4 Nanospheres by RF Induction Thermal Plasma and Their Application in High Thermal Conductive Nanocomposites
Alternative TitleACS Appl. Mater. Interfaces
Hou, Guolin1,2; Cheng, Benli1,3; Ding, Fei1; Yao, Mingshui4; Hu, Peng1; Yuan, Fangli1
2015-02-04
Source PublicationACS APPLIED MATERIALS & INTERFACES
ISSN1944-8244
Volume7Issue:4Pages:2873-2881
Abstract

In this paper, single-crystalline alpha-Si3N4 nanospheres with uniform size of similar to 50 nm are successfully synthesized by using a radio frequency (RF) thermal plasma system in a one-step and continuous way. All Si3N4 nanoparticles present nearly perfect spherical shape with a narrow size distribution, and the diameter is well-controlled by changing the feeding rate. Compact Si3N4/PR (PR = phenolic resin) composites with high thermal conductivity, excellent temperature stability, low dielectric loss tangent, and enhanced breakdown strength are obtained by incorporating the as-synthesized Si3N4 nanospheres. These enhanced properties are the results of good compatibility and strong interfacial adhesion between compact Si3N4 nanospheres and polymer matrix, as large amount of Si3N4 nanospheres can uniformly disperse in the polymer matrix and form thermal conductive networks for diffusion of heat flow.

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In this paper, single-crystalline alpha-Si3N4 nanospheres with uniform size of similar to 50 nm are successfully synthesized by using a radio frequency (RF) thermal plasma system in a one-step and continuous way. All Si3N4 nanoparticles present nearly perfect spherical shape with a narrow size distribution, and the diameter is well-controlled by changing the feeding rate. Compact Si3N4/PR (PR = phenolic resin) composites with high thermal conductivity, excellent temperature stability, low dielectric loss tangent, and enhanced breakdown strength are obtained by incorporating the as-synthesized Si3N4 nanospheres. These enhanced properties are the results of good compatibility and strong interfacial adhesion between compact Si3N4 nanospheres and polymer matrix, as large amount of Si3N4 nanospheres can uniformly disperse in the polymer matrix and form thermal conductive networks for diffusion of heat flow.

Keyword(Rf) Thermal Plasma Silicon Nitride (Alpha-si3n4) Nanoparticles Nanocomposites Thermal Conductivity Dielectric Loss Tangent
SubtypeArticle
WOS HeadingsScience & Technology ; Technology
DOI10.1021/am5081887
URL查看原文
Indexed BySCI
Language英语
WOS KeywordBORON-NITRIDE ; POLYMER-NANOCOMPOSITES ; DIELECTRIC-PROPERTIES ; EPOXY-RESIN ; CARBON NANOTUBES ; ALUMINUM NITRIDE ; COMPOSITES ; DENSITY ; PARTICLE ; FILLERS
WOS Research AreaScience & Technology - Other Topics ; Materials Science
WOS SubjectNanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS IDWOS:000349137300087
Citation statistics
Cited Times:22[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.ipe.ac.cn/handle/122111/11746
Collection研究所(批量导入)
Affiliation1.Chinese Acad Sci, Inst Proc Engn, State Key Lab Multiphase Complex Syst, Beijing 100190, Peoples R China
2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
3.Univ Sci & Technol Beijing, Sch Met & Ecol Engn, Beijing 100083, Peoples R China
4.Chinese Acad Sci, Fujian Inst Res Struct Matter, State Key Lab Struct Chem, Fuzhou 350002, Peoples R China
Recommended Citation
GB/T 7714
Hou, Guolin,Cheng, Benli,Ding, Fei,et al. Synthesis of Uniform alpha-Si3N4 Nanospheres by RF Induction Thermal Plasma and Their Application in High Thermal Conductive Nanocomposites[J]. ACS APPLIED MATERIALS & INTERFACES,2015,7(4):2873-2881.
APA Hou, Guolin,Cheng, Benli,Ding, Fei,Yao, Mingshui,Hu, Peng,&Yuan, Fangli.(2015).Synthesis of Uniform alpha-Si3N4 Nanospheres by RF Induction Thermal Plasma and Their Application in High Thermal Conductive Nanocomposites.ACS APPLIED MATERIALS & INTERFACES,7(4),2873-2881.
MLA Hou, Guolin,et al."Synthesis of Uniform alpha-Si3N4 Nanospheres by RF Induction Thermal Plasma and Their Application in High Thermal Conductive Nanocomposites".ACS APPLIED MATERIALS & INTERFACES 7.4(2015):2873-2881.
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