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MULTI-SCALE SIMULATION OF GRAIN BOUNDARY STRUCTURE EFFECTS IN POLY-Si THIN FILM SOLAR CELL
Li, Chengxiang; Huang, Wenlai; Hou, Chaofeng; Ge, Wei
2013-07-01
Source PublicationINTERNATIONAL JOURNAL OF MODERN PHYSICS C
Volume24Issue:7Pages:1350045
AbstractThe atomic structures of grain boundary (GB) and their effect on the performance of poly-Si thin film solar cell are studied by multi-scale simulations. First, the atomic structures of various GBs are calculated using molecular dynamics. Subsequently, the energy band diagram are obtained by ab-initio calculations. Then, finite difference method is performed to obtain solar cell performance. The results show that the Sigma 5 (twist) GB can greatly enhance the carriers recombination and results in small short-circuit current density (J(SC)) and open-circuit voltage (V-OC). However, the Sigma 17 (twist and tilt) GBs have little influence on the cell performance. Also revealed in the simulations is that the GB near the p-n junction leads to very small JSC and VOC. When the distance between GB and p-n junction increases from about 1.10 mu m to 3.65 mu m, the conversion efficiency increases by about 29%. The thickness effect of solar cell containing the Sigma 5 (twist) GB on the cell performance is also studied. The results show that the conversion efficiency and JSC increase rapidly as the thickness increases from about 5.2 mu m to 40 mu m. When the thickness ranges from about 40 mu m to 70 mu m, the efficiency and the JSC both increase gradually and reach their own peak values at about 70 mu m. When the thickness exceeds 70 mu m, the efficiency and JSC both decrease gradually. However, the VOC keeps increasing with increase in thickness. The effects of GB on the carrier transport and recombination processes are discussed to understand the above results.
KeywordSolar Cell Grain Boundary Photovoltaic Conversion Multi-scale Simulation
SubtypeArticle
WOS HeadingsScience & Technology ; Technology ; Physical Sciences
Indexed BySCI
Language英语
WOS KeywordAMORPHOUS INTERGRANULAR FILMS ; POLYCRYSTALLINE SILICON ; COVALENT MATERIALS ; DIFFUSION LENGTH ; SEMICONDUCTORS ; RECOMBINATION ; PERFORMANCE ; ILLUMINATION ; THICKNESS ; TRANSPORT
WOS Research AreaComputer Science ; Physics
WOS SubjectComputer Science, Interdisciplinary Applications ; Physics, Mathematical
WOS IDWOS:000319985700005
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Cited Times:4[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.ipe.ac.cn/handle/122111/13380
Collection研究所(批量导入)
AffiliationChinese Acad Sci, Inst Proc Engn, State Key Lab Multiphase Complex Syst, Beijing 100190, Peoples R China
Recommended Citation
GB/T 7714
Li, Chengxiang,Huang, Wenlai,Hou, Chaofeng,et al. MULTI-SCALE SIMULATION OF GRAIN BOUNDARY STRUCTURE EFFECTS IN POLY-Si THIN FILM SOLAR CELL[J]. INTERNATIONAL JOURNAL OF MODERN PHYSICS C,2013,24(7):1350045.
APA Li, Chengxiang,Huang, Wenlai,Hou, Chaofeng,&Ge, Wei.(2013).MULTI-SCALE SIMULATION OF GRAIN BOUNDARY STRUCTURE EFFECTS IN POLY-Si THIN FILM SOLAR CELL.INTERNATIONAL JOURNAL OF MODERN PHYSICS C,24(7),1350045.
MLA Li, Chengxiang,et al."MULTI-SCALE SIMULATION OF GRAIN BOUNDARY STRUCTURE EFFECTS IN POLY-Si THIN FILM SOLAR CELL".INTERNATIONAL JOURNAL OF MODERN PHYSICS C 24.7(2013):1350045.
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