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Modulating the Morphology and Electrical Properties of GaAs Nanowires via Catalyst Stabilization by Oxygen
Han, Ning1,2; Yang, Zaixing2,3; Wang, Fengyun4; Yip, SenPo2,3; Dong, Guofa2; Liang, Xiaoguang2; Hung, TakFu2; Chen, Yunfa1; Ho, Johnny C.2,3
2015-03-11
Source PublicationACS APPLIED MATERIALS & INTERFACES
ISSN1944-8244
Volume7Issue:9Pages:5591-5597
Abstract

Nowadays, III-V compound semiconductor nanowires (NWs) have attracted extensive research interest because of their high carrier mobility favorable for next-generation electronics. However, it is still a great challenge for the large-scale synthesis of III-V NWs with well-controlled and uniform morphology as well as reliable electrical properties, especially on the low-cost noncrystalline substrates for practical utilization. In this study, high-density GaAs NWs with lengths >10 mu m and uniform diameter distribution (relative standard deviation sigma similar to 20%) have been successfully prepared by annealing the Au catalyst films (4-12 nm) in air right before GaAs NW growth, which is in distinct contrast to the ones of 2-3 mu m length and widely distributed of sigma similar to 20-60% of the conventional NWs grown by the H-2-annealed film. This air-annealing process is found to stabilize the Au nanoparticle seeds and to minimize Ostwald ripening during NW growth. Importantly, the obtained GaAs NWs exhibit uniform p-type conductivity when fabricated into NW-arrayed thin-film field-effect transistors (FETs). Moreover, they can be integrated with an n-type InP NW FET into effective complementary metal oxide semiconductor inverters, capable of working at low voltages of 0.5-1.5 V. All of these results explicitly demonstrate the promise of these NW morphology and electrical property controls through the catalyst engineering for next-generation electronics.

KeywordGaas Nanowire Oxygen Diameter Control Electronic Property Cmos Inverter
SubtypeArticle
Subject AreaScience & Technology - Other Topics ; Materials Science
WOS HeadingsScience & Technology ; Technology
DOI10.1021/acsami.5b00666
Indexed BySCI
Language英语
WOS KeywordCompound Semiconductor Nanowires ; Electronic Transport-properties ; Field-effect-transistors ; Silicon Nanowires ; Surface Migration ; Inas Nanowires ; Low-voltage ; Growth ; Gold ; Channel
Funding ProjectResearch Grants Council of Hong Kong SAR, China [CityU 139413] ; National Natural Science Foundation of China [51202205, 51402160] ; State Key Laboratory of Multiphase Complex Systems [MPCS-2014-C-01] ; Science Technology and Innovation Committee of Shenzhen Municipality [JCYJ20140419115507588] ; Shenzhen Research Institute, City University of Hong Kong
WOS Research AreaScience & Technology - Other Topics ; Materials Science
WOS SubjectNanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS IDWOS:000350614600067
Citation statistics
Cited Times:13[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.ipe.ac.cn/handle/122111/13813
Collection研究所(批量导入)
Corresponding AuthorHo, Johnny C.
Affiliation1.Chinese Acad Sci, Inst Proc Engn, State Key Lab Multiphase Complex Syst, Beijing 100190, Peoples R China
2.City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Hong Kong, Peoples R China
3.City Univ Hong Kong, Shenzhen Res Inst, Shenzhen 518057, Peoples R China
4.Qingdao Univ, Cultivat Base State Key Lab, Qingdao 266071, Peoples R China
Recommended Citation
GB/T 7714
Han, Ning,Yang, Zaixing,Wang, Fengyun,et al. Modulating the Morphology and Electrical Properties of GaAs Nanowires via Catalyst Stabilization by Oxygen[J]. ACS APPLIED MATERIALS & INTERFACES,2015,7(9):5591-5597.
APA Han, Ning.,Yang, Zaixing.,Wang, Fengyun.,Yip, SenPo.,Dong, Guofa.,...&Ho, Johnny C..(2015).Modulating the Morphology and Electrical Properties of GaAs Nanowires via Catalyst Stabilization by Oxygen.ACS APPLIED MATERIALS & INTERFACES,7(9),5591-5597.
MLA Han, Ning,et al."Modulating the Morphology and Electrical Properties of GaAs Nanowires via Catalyst Stabilization by Oxygen".ACS APPLIED MATERIALS & INTERFACES 7.9(2015):5591-5597.
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