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The role of MoS2 as an interfacial layer in graphene/silicon solar cells
Jiao, Kejia; Duan, Chunyang; Wu, Xiaofeng; Chen, Jiayuan; Wang, Yu; Chen, Yunfa
2015
Source PublicationPHYSICAL CHEMISTRY CHEMICAL PHYSICS
ISSN1463-9076
Volume17Issue:12Pages:8182-8186
Abstract

The role of MoS2 as an effective interfacial layer in graphene/silicon solar cells is systematically investigated by varying MoS2 film annealing temperature and thickness. It is found that the power conversion efficiency (PCE) is increased by similar to 100% from similar to 2.3% to similar to 4.4% with 80 degrees C annealed MoS2 film whereas it drops significantly to similar to 0.6% with 200 degrees C annealed MoS2 film. The results are well explained based on the device energy band diagram. That is, the incorporation of MoS2(80) films leads to the formation of type II structure, facilitating hole transport; while valence band mismatch is formed with MoS2(200) films due to the increase in the work function of MoS2. Besides, the PCE increases gradually with decreasing MoS2 film thickness, and ''saturates'' at about 2 nm. The PCE can be further enhanced to similar to 6.6% with the aid of silicon surface passivation. Our work demonstrates that MoS2 is an excellent interfacial layer to improve the PCE with low-temperature annealing (80 degrees C in air), which may be helpful in developing efficient and low-cost G/Si solar cells.

KeywordEfficiency Performance Extraction Nanosheets Films Hole
SubtypeArticle
Subject AreaChemistry ; Physics
WOS HeadingsScience & Technology ; Physical Sciences
DOI10.1039/c5cp00321k
Indexed BySCI
Language英语
WOS KeywordEfficiency ; Performance ; Extraction ; Nanosheets ; Films ; Hole
Funding ProjectNational Natural Science Foundation of China [51272253] ; Strategic Leading Science & Technology Programme [XDB0505000] ; 863 Hi-tech Research and Development Program of China [2010AA064903] ; Hundred Talents Program of the Chinese Academy of Sciences
WOS Research AreaChemistry ; Physics
WOS SubjectChemistry, Physical ; Physics, Atomic, Molecular & Chemical
WOS IDWOS:000351437500066
Citation statistics
Cited Times:37[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.ipe.ac.cn/handle/122111/13840
Collection研究所(批量导入)
Corresponding AuthorWang, Yu
AffiliationChinese Acad Sci, Inst Proc Engn, State Key Lab Multiphase Complex Syst, Beijing 100190, Peoples R China
Recommended Citation
GB/T 7714
Jiao, Kejia,Duan, Chunyang,Wu, Xiaofeng,et al. The role of MoS2 as an interfacial layer in graphene/silicon solar cells[J]. PHYSICAL CHEMISTRY CHEMICAL PHYSICS,2015,17(12):8182-8186.
APA Jiao, Kejia,Duan, Chunyang,Wu, Xiaofeng,Chen, Jiayuan,Wang, Yu,&Chen, Yunfa.(2015).The role of MoS2 as an interfacial layer in graphene/silicon solar cells.PHYSICAL CHEMISTRY CHEMICAL PHYSICS,17(12),8182-8186.
MLA Jiao, Kejia,et al."The role of MoS2 as an interfacial layer in graphene/silicon solar cells".PHYSICAL CHEMISTRY CHEMICAL PHYSICS 17.12(2015):8182-8186.
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