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Modulating Electrical Properties of InAs Nanowires via Molecular Monolayers
Cheung, Ho-Yuen1; Yip, SenPo2,3; Han, Ning4; Dong, Goufa2; Fang, Ming2; Yang, Zai-xing2,3; Wang, Fengyun5; Lin, Hao2; Wong, Chun-Yuen1,3; Ho, Johnny C.2,3
2015-07-01
Source PublicationACS NANO
ISSN1936-0851
Volume9Issue:7Pages:7545-7552
Abstract

In recent years, InAs nanowires have been demonstrated with the excellent electron mobility as well as highly efficient near-infrared and visible photoresponse at room temperature. However, due to the presence of a large amount of surface states that originate from the unstable native oxide, the fabricated nanowire transistors are always operated in the depletion mode with degraded electron mobility, which is not energy-efficient. In this work, instead of the conventional inorganic sulfur or alkanethiol surface passivation, we employ aromatic thiolate (ArS-)-based molecular monolayers with controllable molecular design and electron density for the surface modification of InAs nanowires (i.e., device channels) by simple wet chemistry. More importantly, besides reliably improving the device performances by enhancing the electron mobility and the current on off ratio through surface state passivation, the device threshold voltage (V-Th) can also be modulated by varying the para-substituent of the monolayers such that the molecule bearing electron-withdrawing groups would significantly shift the V-Th towards the positive region for the enhancement mode device operation, in which the effect has been quantified by density functional theory calculations. These findings reveal explicitly the efficient modulation of the InAs nanowires' electronic transport properties via ArS--based molecular monolayers, which further elucidates the technological potency of this ArS- surface treatment for future nanoelectronic device fabrication and circuit integration.

KeywordInas Nanowires Molecular Monolayers Aromatic Thiol Threshold Voltages Electrical Properties Mobility
SubtypeArticle
WOS HeadingsScience & Technology ; Physical Sciences ; Technology
DOI10.1021/acsnano.5b02745
Indexed BySCI
Language英语
WOS KeywordEFFECTIVE CORE POTENTIALS ; GAUSSIAN-BASIS SETS ; ORBITAL METHODS ; TRANSPORT-PROPERTIES ; CORRELATION-ENERGY ; TRANSISTORS ; ELEMENTS ; DENSITY ; SEMICONDUCTORS ; APPROXIMATION
WOS Research AreaChemistry ; Science & Technology - Other Topics ; Materials Science
WOS SubjectChemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS IDWOS:000358823200092
Citation statistics
Cited Times:18[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.ipe.ac.cn/handle/122111/19419
Collection多相复杂系统国家重点实验室
Affiliation1.City Univ Hong Kong, Dept Biol & Chem, Kowloon, Hong Kong, Peoples R China
2.City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China
3.City Univ Hong Kong, State Key Lab Millimeter Waves, Kowloon, Hong Kong, Peoples R China
4.Chinese Acad Sci, Inst Proc Engn, State Key Lab Multiphase Complex Syst, Beijing 100190, Peoples R China
5.Qingdao Univ, Cultivat Base State Key Lab, Qingdao 266071, Peoples R China
Recommended Citation
GB/T 7714
Cheung, Ho-Yuen,Yip, SenPo,Han, Ning,et al. Modulating Electrical Properties of InAs Nanowires via Molecular Monolayers[J]. ACS NANO,2015,9(7):7545-7552.
APA Cheung, Ho-Yuen.,Yip, SenPo.,Han, Ning.,Dong, Goufa.,Fang, Ming.,...&Ho, Johnny C..(2015).Modulating Electrical Properties of InAs Nanowires via Molecular Monolayers.ACS NANO,9(7),7545-7552.
MLA Cheung, Ho-Yuen,et al."Modulating Electrical Properties of InAs Nanowires via Molecular Monolayers".ACS NANO 9.7(2015):7545-7552.
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