CAS OpenIR  > 多相复杂系统国家重点实验室
Growth and Photovoltaic Properties of High-Quality GaAs Nanowires Prepared by the Two-Source CVD Method
Wang, Ying1,2; Yang, Zaixing3,4,5; Wu, Xiaofeng1,2; Han, Ning1,2; Liu, Hanyu6; Wang, Shuobo6; Li, Jun6; Tse, WaiMan3; Yip, Senpo3,4,5; Chen, Yunfa1,2; Ho, Johnny C.3,4,5
2016-04-12
Source PublicationNANOSCALE RESEARCH LETTERS
ISSN1556-276X
Volume11Issue:APRPages:191
AbstractGrowing high-quality and low-cost GaAs nanowires (NWs) as well as fabricating high-performance NW solar cells by facile means is an important development towards the cost-effective next-generation photovoltaics. In this work, highly crystalline, dense, and long GaAs NWs are successfully synthesized using a two-source method on non-crystalline SiO2 substrates by a simple solid-source chemical vapor deposition method. The high V/III ratio and precursor concentration enabled by this two-source configuration can significantly benefit the NW growth and suppress the crystal defect formation as compared with the conventional one-source system. Since less NW crystal defects would contribute fewer electrons being trapped by the surface oxides, the p-type conductivity is then greatly enhanced as revealed by the electrical characterization of fabricated NW devices. Furthermore, the individual single NW and high-density NW parallel arrays achieved by contact printing can be effectively fabricated into Schottky barrier solar cells simply by employing asymmetric Ni-Al contacts, along with an open circuit voltage of similar to 0.3 V. All these results indicate the technological promise of these high-quality two-source grown GaAs NWs, especially for the realization of facile Schottky solar cells utilizing the asymmetric Ni-Al contact.
KeywordGaas Chemical Vapor Deposition Two-source Contact Printing Nanowire Parallel Arrays Schottky Solar Cells
SubtypeArticle
WOS HeadingsScience & Technology ; Technology ; Physical Sciences
DOI10.1186/s11671-016-1420-y
Indexed BySCI
Language英语
WOS KeywordELECTRONIC TRANSPORT-PROPERTIES ; SOLAR-CELLS ; EVAPORATION ; EFFICIENCY ; MECHANISM ; MOBILITY ; LAYER
WOS Research AreaScience & Technology - Other Topics ; Materials Science ; Physics
WOS SubjectNanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
Funding OrganizationNational Natural Science Foundation of China(61504151) ; General Research Fund of the Research Grants Council of Hong Kong SAR, China(CityU 11204614) ; State Key Laboratory of Multiphase Complex Systems(MPCS-2015-A-04) ; CAS-CSIRO project of the Bureau of International Co-operation of Chinese Academy of Sciences(122111KYSB20150064) ; Science Technology and Innovation Committee of Shenzhen Municipality(JCYJ20140419115507588) ; Shenzhen Research Institute, City University of Hong Kong
WOS IDWOS:000374287400001
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Cited Times:5[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.ipe.ac.cn/handle/122111/21013
Collection多相复杂系统国家重点实验室
Affiliation1.Chinese Acad Sci, Inst Proc Engn, State Key Lab Multiphase Complex Syst, Beijing 100190, Peoples R China
2.Chinese Acad Sci, Inst Urban Environm, Ctr Excellence Urban Atmospher Environm, Xiamen 361021, Peoples R China
3.City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China
4.City Univ Hong Kong, State Key Lab Millimeter Waves, Kowloon, Hong Kong, Peoples R China
5.City Univ Hong Kong, Shenzhen Res Inst, Shenzhen 518057, Peoples R China
6.Beijing Natl Day Sch, Beijing 100039, Peoples R China
Recommended Citation
GB/T 7714
Wang, Ying,Yang, Zaixing,Wu, Xiaofeng,et al. Growth and Photovoltaic Properties of High-Quality GaAs Nanowires Prepared by the Two-Source CVD Method[J]. NANOSCALE RESEARCH LETTERS,2016,11(APR):191.
APA Wang, Ying.,Yang, Zaixing.,Wu, Xiaofeng.,Han, Ning.,Liu, Hanyu.,...&Ho, Johnny C..(2016).Growth and Photovoltaic Properties of High-Quality GaAs Nanowires Prepared by the Two-Source CVD Method.NANOSCALE RESEARCH LETTERS,11(APR),191.
MLA Wang, Ying,et al."Growth and Photovoltaic Properties of High-Quality GaAs Nanowires Prepared by the Two-Source CVD Method".NANOSCALE RESEARCH LETTERS 11.APR(2016):191.
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