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Crystal Orientation Controlled Photovoltaic Properties of Multilayer GaAs Nanowire Arrays
Han, Ning1,2; Yang, Zai-xing3,4,5; Wang, Fengyun6; Yip, SenPo3,4,5; Li, Dapan3,5; Hung, Tak Fu3; Chen, Yunfa1,2; Ho, Johnny C.3,4,5
Source PublicationACS NANO
AbstractIn recent years, despite significant progress in the synthesis, characterization, and integration of various nanowire (NW) material systems, crystal orientation controlled NW growth as well as real-time assessment of their growth-structure-property relationships still presents one of the major challenges in deploying NWs for practical large-scale applications. In this study, we propose, design, and develop a multilayer NW printing scheme for the determination of crystal orientation controlled photovoltaic properties of parallel GaAs NW arrays. By tuning the catalyst thickness and nucleation and growth temperatures in the two-step chemical vapor deposition, crystalline GaAs NWs with uniform, pure (110) and (111) orientations and other mixture ratios can be successfully prepared. Employing lift-off resists, three-layer NW parallel arrays can be easily attained for X-ray diffraction in order to evaluate their growth orientation along with the fabrication of NW parallel array based Schottky photovoltaic devices for the subsequent performance assessment. Notably, the open-circuit voltage of purely (111)-oriented NW arrayed cells is far higher than that of (110)-oriented NW arrayed counterparts, which can be interpreted by the different surface Fermi level pinning that exists on various NW crystal surface planes due to the different As dangling bond densities. All this indicates the profound effect of NW crystal orientation on physical and chemical properties of GaAs NWs, suggesting the careful NW design considerations for achieving optimal photovoltaic performances. The approach presented here could also serve as a versatile and powerful platform for in situ characterization of other NW materials.
KeywordGaas Nanowire Orientation Contact Printing X-ray Diffraction Photovoltaic Schottky Contact
WOS HeadingsScience & Technology ; Physical Sciences ; Technology
Indexed BySCI
WOS Research AreaChemistry ; Science & Technology - Other Topics ; Materials Science
WOS SubjectChemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
Funding OrganizationGeneral Research Fund of the Research Grants Council of Hong Kong SAR, China(CityU 11213115) ; National Natural Science Foundation of China(61504151 ; State Key Laboratory of Multiphase Complex Systems(MPCS-2014-C-01) ; Applied Basic Research Foundation of Qingdao City(14-2-4-45-jch) ; Science Technology and Innovation Committee of Shenzhen Municipality(JCYJ20140419115507588) ; Shenzhen Research Institute, City University of Hong Kong ; 51402160)
WOS IDWOS:000378973700077
Citation statistics
Cited Times:14[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Affiliation1.Chinese Acad Sci, Inst Proc Engn, State Key Lab Multiphase Complex Syst, Beijing 100190, Peoples R China
2.Chinese Acad Sci, Inst Urban Environm, Ctr Excellence Urban Atmospher Environm, Xiamen 361021, Peoples R China
3.City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China
4.City Univ Hong Kong, State Key Lab Millimeter Waves, Kowloon, Hong Kong, Peoples R China
5.City Univ Hong Kong, Shenzhen Res Inst, Shenzhen 518057, Peoples R China
6.Qingdao Univ, Cultivat Base State Key Lab, Qingdao 266071, Peoples R China
Recommended Citation
GB/T 7714
Han, Ning,Yang, Zai-xing,Wang, Fengyun,et al. Crystal Orientation Controlled Photovoltaic Properties of Multilayer GaAs Nanowire Arrays[J]. ACS NANO,2016,10(6):6283-6290.
APA Han, Ning.,Yang, Zai-xing.,Wang, Fengyun.,Yip, SenPo.,Li, Dapan.,...&Ho, Johnny C..(2016).Crystal Orientation Controlled Photovoltaic Properties of Multilayer GaAs Nanowire Arrays.ACS NANO,10(6),6283-6290.
MLA Han, Ning,et al."Crystal Orientation Controlled Photovoltaic Properties of Multilayer GaAs Nanowire Arrays".ACS NANO 10.6(2016):6283-6290.
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