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Diameter Dependence of Planar Defects in InP Nanowires
Wang, Fengyun1,2; Wang, Chao1,2; Wang, Yiqian1,2; Zhang, Minghuan1,2; Han, Zhenlian1,2; Yip, SenPo3,4,5; Shen, Lifan4,5,6; Han, Ning7; Pun, Edwin Y. B.4,6; Ho, Johnny C.3,4,5
2016-09-12
发表期刊SCIENTIFIC REPORTS
ISSN2045-2322
卷号6期号:SEP页码:32910
摘要

In this work, extensive characterization and complementary theoretical analysis have been carried out on Au-catalyzed InP nanowires in order to understand the planar defect formation as a function of nanowire diameter. From the detailed transmission electron microscopic measurements, the density of stacking faults and twin defects are found to monotonically decrease as the nanowire diameter is decreased to 10 nm, and the chemical analysis clearly indicates the drastic impact of In catalytic supersaturation in Au nanoparticles on the minimized planar defect formation in miniaturized nanowires. Specifically, during the chemical vapor deposition of InP nanowires, a significant amount of planar defects is created when the catalyst seed sizes are increased with the lower degree of In supersaturation as dictated by the Gibbs-Thomson effect, and an insufficient In diffusion (or Au-rich enhancement) would lead to a reduced and non-uniform In precipitation at the NW growing interface. The results presented here provide an insight into the fabrication of "bottom-up" InP NWs with minimized defect concentration which are suitable for various device applications.

文章类型Article
WOS标题词Science & Technology
DOI10.1038/srep32910
收录类别SCI
语种英语
关键词[WOS]INDIUM-PHOSPHIDE NANOWIRES ; ELECTRONIC TRANSPORT-PROPERTIES ; III-V NANOWIRES ; SEMICONDUCTOR NANOWIRES ; GASB NANOWIRES ; GAAS NANOWIRES ; SOLID-SOLUTION ; SOLAR-CELLS ; ZINC BLENDE ; GROWTH
WOS研究方向Science & Technology - Other Topics
WOS类目Multidisciplinary Sciences
项目资助者General Research Fund of the Research Grants Council of Hong Kong SAR, China(CityU 11213115) ; National Natural Science Foundation of China(51402160) ; Natural Science Foundation of Shandong Province, China(ZR2014EMQ011) ; Applied Basic Research Foundation of Qingdao City(14-2-4-45-jch) ; Science Technology and Innovation Committee of Shenzhen Municipality(JCYJ20160229165240684) ; Shenzhen Research Institute, City University of Hong Kong
WOS记录号WOS:000382891800001
引用统计
文献类型期刊论文
条目标识符http://ir.ipe.ac.cn/handle/122111/21446
专题生化工程国家重点实验室
作者单位1.Qingdao Univ, Coll Phys, Qingdao 266071, Peoples R China
2.Qingdao Univ, Cultivat Base State Key Lab, Qingdao 266071, Peoples R China
3.City Univ Hong Kong, Dept Phys & Mat Sci, 83 Tat Chee Ave, Kowloon, Hong Kong, Peoples R China
4.City Univ Hong Kong, State Key Lab Millimeter Waves, Kowloon, Hong Kong, Peoples R China
5.City Univ Hong Kong, Shenzhen Res Inst, Shenzhen 518057, Peoples R China
6.City Univ Hong Kong, Dept Elect Engn, 83 Tat Chee Ave, Kowloon, Hong Kong, Peoples R China
7.Chinese Acad Sci, Inst Proc Engn, State Key Lab Multiphase Complex Syst, Beijing 100190, Peoples R China
推荐引用方式
GB/T 7714
Wang, Fengyun,Wang, Chao,Wang, Yiqian,et al. Diameter Dependence of Planar Defects in InP Nanowires[J]. SCIENTIFIC REPORTS,2016,6(SEP):32910.
APA Wang, Fengyun.,Wang, Chao.,Wang, Yiqian.,Zhang, Minghuan.,Han, Zhenlian.,...&Ho, Johnny C..(2016).Diameter Dependence of Planar Defects in InP Nanowires.SCIENTIFIC REPORTS,6(SEP),32910.
MLA Wang, Fengyun,et al."Diameter Dependence of Planar Defects in InP Nanowires".SCIENTIFIC REPORTS 6.SEP(2016):32910.
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