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Diameter Dependence of Planar Defects in InP Nanowires
Wang, Fengyun1,2; Wang, Chao1,2; Wang, Yiqian1,2; Zhang, Minghuan1,2; Han, Zhenlian1,2; Yip, SenPo3,4,5; Shen, Lifan4,5,6; Han, Ning7; Pun, Edwin Y. B.4,6; Ho, Johnny C.3,4,5
2016-09-12
Source PublicationSCIENTIFIC REPORTS
ISSN2045-2322
Volume6Issue:SEPPages:32910
Abstract

In this work, extensive characterization and complementary theoretical analysis have been carried out on Au-catalyzed InP nanowires in order to understand the planar defect formation as a function of nanowire diameter. From the detailed transmission electron microscopic measurements, the density of stacking faults and twin defects are found to monotonically decrease as the nanowire diameter is decreased to 10 nm, and the chemical analysis clearly indicates the drastic impact of In catalytic supersaturation in Au nanoparticles on the minimized planar defect formation in miniaturized nanowires. Specifically, during the chemical vapor deposition of InP nanowires, a significant amount of planar defects is created when the catalyst seed sizes are increased with the lower degree of In supersaturation as dictated by the Gibbs-Thomson effect, and an insufficient In diffusion (or Au-rich enhancement) would lead to a reduced and non-uniform In precipitation at the NW growing interface. The results presented here provide an insight into the fabrication of "bottom-up" InP NWs with minimized defect concentration which are suitable for various device applications.

SubtypeArticle
WOS HeadingsScience & Technology
DOI10.1038/srep32910
Indexed BySCI
Language英语
WOS KeywordINDIUM-PHOSPHIDE NANOWIRES ; ELECTRONIC TRANSPORT-PROPERTIES ; III-V NANOWIRES ; SEMICONDUCTOR NANOWIRES ; GASB NANOWIRES ; GAAS NANOWIRES ; SOLID-SOLUTION ; SOLAR-CELLS ; ZINC BLENDE ; GROWTH
WOS Research AreaScience & Technology - Other Topics
WOS SubjectMultidisciplinary Sciences
Funding OrganizationGeneral Research Fund of the Research Grants Council of Hong Kong SAR, China(CityU 11213115) ; National Natural Science Foundation of China(51402160) ; Natural Science Foundation of Shandong Province, China(ZR2014EMQ011) ; Applied Basic Research Foundation of Qingdao City(14-2-4-45-jch) ; Science Technology and Innovation Committee of Shenzhen Municipality(JCYJ20160229165240684) ; Shenzhen Research Institute, City University of Hong Kong
WOS IDWOS:000382891800001
Citation statistics
Cited Times:5[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.ipe.ac.cn/handle/122111/21446
Collection生化工程国家重点实验室
Affiliation1.Qingdao Univ, Coll Phys, Qingdao 266071, Peoples R China
2.Qingdao Univ, Cultivat Base State Key Lab, Qingdao 266071, Peoples R China
3.City Univ Hong Kong, Dept Phys & Mat Sci, 83 Tat Chee Ave, Kowloon, Hong Kong, Peoples R China
4.City Univ Hong Kong, State Key Lab Millimeter Waves, Kowloon, Hong Kong, Peoples R China
5.City Univ Hong Kong, Shenzhen Res Inst, Shenzhen 518057, Peoples R China
6.City Univ Hong Kong, Dept Elect Engn, 83 Tat Chee Ave, Kowloon, Hong Kong, Peoples R China
7.Chinese Acad Sci, Inst Proc Engn, State Key Lab Multiphase Complex Syst, Beijing 100190, Peoples R China
Recommended Citation
GB/T 7714
Wang, Fengyun,Wang, Chao,Wang, Yiqian,et al. Diameter Dependence of Planar Defects in InP Nanowires[J]. SCIENTIFIC REPORTS,2016,6(SEP):32910.
APA Wang, Fengyun.,Wang, Chao.,Wang, Yiqian.,Zhang, Minghuan.,Han, Zhenlian.,...&Ho, Johnny C..(2016).Diameter Dependence of Planar Defects in InP Nanowires.SCIENTIFIC REPORTS,6(SEP),32910.
MLA Wang, Fengyun,et al."Diameter Dependence of Planar Defects in InP Nanowires".SCIENTIFIC REPORTS 6.SEP(2016):32910.
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