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Raman and Visible-Near Infrared Spectra of Cu(InGa)Se-2 Films
Xu Dong-mei1; Pan Kun1; Liu Xu-wei1; Wang Xue-jin1; Wang Wen-zhong2; Liang Chun-jun3; Wang Zhi2
2016-10-01
Source PublicationSPECTROSCOPY AND SPECTRAL ANALYSIS
ISSN1000-0593
Volume36Issue:10Pages:3197-3201
Abstract

Cu(InxGa1-x)Se-2 (GIGS) precursor films were prepared on ITO glass with potentiostatic electrodeposition. High quality CIGS films were obtained by selenization of the precursor films at high temperature in tubular furnace full of argon gas. X-ray diffraction (XRD), scanning electron microscopy (SEM) and UV-Vis-NIR spectroscopy were used to characterize the structure, morphology, composition and Vis-NIR absorption of CIGS films, respectively. XRD results show the selenized CIGS films have a preferential orientation (112) with average crystallite of 24. 7 nm. Raman spectroscopy reveals that the CIGS films are pure quaternaryphases with chalcopyrite structure, and without binary or ternary phases in the films. Vis-NIR measurements determine that the bandgap of CIGS increases with the increase of Ga concentration in the film. When the Ga concentration is 5. 41%, its bandgap is about 1. 11 eV, and the calculated ratio of Ga to (Ga+In) is 16. 3%, which is less than the ratio of Ga to (Ga+In), 21. 4%, measured by SEM. This indicates that crystallinity of CIGS filmsneeds to be further improved. All the measurements demonstratethat optimum ITO/CIGS has a promising application in bifacial solar cells. In this paper, we provide a newmethodtoelectrodeposit low cost CIGS precursor films and a new method forselenization ofthe precursor films at high temperature. As a result, theuniform and compact CIGS films with good adhesion on ITO are successfully fabricated by these methods. The above characterization show that we have obtained CIGS films with high crystallinity, near stoichiometry, few impurity phases and superior light absorption. Electrodeposition, like magnetron sputtering, is very suitable for large-scale industrial production. The research work in this paper is therefore important and considerable to massive production of electrodeposition of CIGS films.

KeywordCigs Thin Films Raman Vis-nir Spectra
SubtypeArticle
WOS HeadingsScience & Technology ; Technology
DOI10.3964/j.issn.1000-0593(2016)10-3197-05
Indexed BySCI
Language英语
WOS KeywordCIGS SOLAR-CELLS ; LAYER ; FABRICATION
WOS Research AreaSpectroscopy
WOS SubjectSpectroscopy
WOS IDWOS:000385475500021
Citation statistics
Cited Times:1[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.ipe.ac.cn/handle/122111/21558
Collection多相复杂系统国家重点实验室
Affiliation1.China Agr Univ, Coll Sci, Beijing 100083, Peoples R China
2.Chinese Acad Sci, Inst Proc Engn, Beijing 100190, Peoples R China
3.Beijing Jiaotong Univ, Sch Sci, Beijing 100044, Peoples R China
Recommended Citation
GB/T 7714
Xu Dong-mei,Pan Kun,Liu Xu-wei,et al. Raman and Visible-Near Infrared Spectra of Cu(InGa)Se-2 Films[J]. SPECTROSCOPY AND SPECTRAL ANALYSIS,2016,36(10):3197-3201.
APA Xu Dong-mei.,Pan Kun.,Liu Xu-wei.,Wang Xue-jin.,Wang Wen-zhong.,...&Wang Zhi.(2016).Raman and Visible-Near Infrared Spectra of Cu(InGa)Se-2 Films.SPECTROSCOPY AND SPECTRAL ANALYSIS,36(10),3197-3201.
MLA Xu Dong-mei,et al."Raman and Visible-Near Infrared Spectra of Cu(InGa)Se-2 Films".SPECTROSCOPY AND SPECTRAL ANALYSIS 36.10(2016):3197-3201.
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