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Controllable III-V nanowire growth via catalyst epitaxy
Han, Ning1,2; Wang, Ying1,2; Yang, Zai-xing3,4; Yip, SenPo5,6,7; Wang, Zhou1,2; Li, Dapan5,6; Hung, Tak Fu5,6; Wang, Fengyun8,9; Chen, Yunfa1,2; Ho, Johnny C.5,6,7

Controllable synthesis of III-V compound semiconductor nanowires (NWs) with high crystallinity and uniformity is essential for their large-scale practical use in various technological applications, especially for those which are grown on non-crystalline substrates. In this study, the catalytic effect is investigated thoroughly in the growth of various III-V NWs in solid-source chemical vapor deposition, including Pd, Ag and Ni catalyzed GaAs NWs and Au catalyzed InGaAs and GaSb NWs. It is found that small diameter catalyst seeds lead to faster NW growth with better crystal quality, while large seeds result in slower NW growth with kinked morphology and twinning defects. Importantly, these small catalyst nanoparticles are observed to have higher solubility of the group III precursors due to the Gibbs-Thomson effect, which not only enables effective III precursor diffusion for a faster growth rate, but also yields epitaxial growth of NWs from the catalyst seeds accounting for the low activation energy and better crystallinity. All these results explicitly demonstrate the effectiveness of this catalyst solubility and epitaxy engineering for controlled III-V NW growth and indicate the potency for the reliable production of high-performance NWs for next-generation electronics.

WOS HeadingsScience & Technology ; Technology ; Physical Sciences
Indexed BySCI
WOS KeywordChemical-vapor-deposition ; Liquid-solid Mechanism ; Gaas Nanowires ; Silicon Nanowires ; Stacking-faults ; Gasb Nanowires ; Zinc Blende ; Electronics ; Morphology ; Channel
WOS Research AreaMaterials Science ; Physics
WOS SubjectMaterials Science, Multidisciplinary ; Physics, Applied
Funding OrganizationEarly Career Scheme of the Research Grants Council of Hong Kong SAR, China(CityU 139413) ; National Natural Science Foundation of China(51602314 ; State Key Laboratory of Multiphase Complex Systems(MPCS-2015-A-04) ; CAS-CSIRO project of the Bureau of International Co-operation of Chinese Academy of Sciences(122111KYSB20150064)
WOS IDWOS:000401103000006
Citation statistics
Cited Times:11[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Affiliation1.Chinese Acad Sci, Inst Proc Engn, State Key Lab Multiphase Complex Syst, Beijing 100190, Peoples R China
2.Chinese Acad Sci, Inst Urban Environm, Ctr Excellence Reg Atmospher Environm, Xiamen 361021, Peoples R China
3.Shandong Univ, Ctr Nanoelect, Jinan 250100, Peoples R China
4.Shandong Univ, Sch Microelect, Jinan 250100, Peoples R China
5.City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Hong Kong, Peoples R China
6.City Univ Hong Kong, State Key Lab Millimeter Waves, Hong Kong, Hong Kong, Peoples R China
7.City Univ Hong Kong, Shenzhen Res Inst, Shenzhen 518057, Peoples R China
8.Qingdao Univ, Coll Phys, 308 Ningxia Rd, Qingdao 266071, Peoples R China
9.Qingdao Univ, Cultivat Base State Key Lab, 308 Ningxia Rd, Qingdao 266071, Peoples R China
Recommended Citation
GB/T 7714
Han, Ning,Wang, Ying,Yang, Zai-xing,et al. Controllable III-V nanowire growth via catalyst epitaxy[J]. JOURNAL OF MATERIALS CHEMISTRY C,2017,5(18):4393-4399.
APA Han, Ning.,Wang, Ying.,Yang, Zai-xing.,Yip, SenPo.,Wang, Zhou.,...&Ho, Johnny C..(2017).Controllable III-V nanowire growth via catalyst epitaxy.JOURNAL OF MATERIALS CHEMISTRY C,5(18),4393-4399.
MLA Han, Ning,et al."Controllable III-V nanowire growth via catalyst epitaxy".JOURNAL OF MATERIALS CHEMISTRY C 5.18(2017):4393-4399.
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