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Manipulating III-V Nanowire Transistor Performance via Surface Decoration of Metal-Oxide Nanoparticles
Wang, Fengyun1,2; Yip, SenPo3,4,5; Dong, Guofa3,5; Xiu, Fei6,7; Song, Longfei1,2; Yang, Zaixing8; Li, Dapan3,5; Hung, Tak Fu3; Han, Ning9; Ho, Johnny C.3,4,5
2017-06-23
发表期刊ADVANCED MATERIALS INTERFACES
ISSN2196-7350
卷号4期号:12
摘要Recently, III-V semiconductor nanowires (NWs) are widely investigated as field-effect transistors (FETs) for high-performance electronics, optoelectronic, and others; nevertheless, effective control in their device performances, especially the threshold voltage is still not well attained, which can potentially limit their practical uses for technological applications. This study reports a simple but highly reliable metal-oxide nanoparticle (NP) surface decoration approach onto the device channel in order to manipulate electrical characteristics of III-V NWFETs, such as the threshold voltage and transistor operation, through the manipulation of free electrons in the NW channel (i.e., InAs, InP, and In0.7Ga0.3As) via depositing various metal-oxide NPs with different work functions. Without any passivation layer, this decoration approach can yield the stable NW device characteristics in ambient. Notably, the versatility of our decoration scheme has also been illustrated through the realization of high-performance enhancement-mode InAs NW-paralleled-arrayed devices as well as the configuration of highly efficient InAs NW NMOS inverters, comprising of both depletion and enhancement mode devices. All these results further elucidate the technological potential of this decoration approach for future high-performance, low-power nanoelectronic device fabrication, and circuit integration.
关键词Enhancement Modes Iii-v Nanowires Metal-oxide Nanoparticles Surface Decoration Threshold Voltage
文章类型Article
WOS标题词Science & Technology ; Physical Sciences ; Technology
DOI10.1002/admi.201700260
收录类别SCI
语种英语
关键词[WOS]ELECTRONIC TRANSPORT-PROPERTIES ; THIN-FILM TRANSISTORS ; ELECTRICAL-PROPERTIES ; GAAS NANOWIRES ; SOLAR-CELLS ; INAS NANOWIRES ; PHOTODETECTORS ; SILICON ; VOLTAGE ; SENSORS
WOS研究方向Chemistry ; Materials Science
WOS类目Chemistry, Multidisciplinary ; Materials Science, Multidisciplinary
项目资助者National Natural Science Foundation of China(51402160 ; Natural Science Foundation of Shandong Province, China(ZR2014EMQ011) ; General Research Fund(CityU 11204614) ; Theme-based Research Scheme of the Research Grants Council of Hong Kong SAR, China(T42-103/16-N) ; Science Technology and Innovation Committee of Shenzhen Municipality(JCYJ20160229165240684) ; Taishan Scholar Program of Shandong Province, China ; 51672229 ; 61504151)
WOS记录号WOS:000404129600013
引用统计
被引频次:6[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ipe.ac.cn/handle/122111/22706
专题多相复杂系统国家重点实验室
作者单位1.Qingdao Univ, Coll Phys, Qingdao 266071, Peoples R China
2.Qingdao Univ, Cultivat Base State Key Lab, Qingdao 266071, Peoples R China
3.City Univ Hong Kong, Dept Phys & Mat Sci, 83 Tat Chee Ave, Kowloon, Hong Kong, Peoples R China
4.City Univ Hong Kong, State Key Lab Millimeter Waves, 83 Tat Chee Ave, Kowloon, Hong Kong, Peoples R China
5.City Univ Hong Kong, Shenzhen Res Inst, Shenzhen 518057, Peoples R China
6.Nanjing Tech Univ NanjingTech, Jiangsu Natl Synerget Innovat Ctr Adv Mat SICAM, KLOFE, Nanjing 211816, Jiangsu, Peoples R China
7.Nanjing Tech Univ NanjingTech, Jiangsu Natl Synerget Innovat Ctr Adv Mat SICAM, Inst Adv Mat, Nanjing 211816, Jiangsu, Peoples R China
8.Shandong Univ, Sch Microelect & Ctr Nanoelect, Jinan 250100, Peoples R China
9.Chinese Acad Sci, Inst Proc Engn, State Key Lab Multiphase Complex Syst, Beijing 100190, Peoples R China
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Wang, Fengyun,Yip, SenPo,Dong, Guofa,et al. Manipulating III-V Nanowire Transistor Performance via Surface Decoration of Metal-Oxide Nanoparticles[J]. ADVANCED MATERIALS INTERFACES,2017,4(12).
APA Wang, Fengyun.,Yip, SenPo.,Dong, Guofa.,Xiu, Fei.,Song, Longfei.,...&Ho, Johnny C..(2017).Manipulating III-V Nanowire Transistor Performance via Surface Decoration of Metal-Oxide Nanoparticles.ADVANCED MATERIALS INTERFACES,4(12).
MLA Wang, Fengyun,et al."Manipulating III-V Nanowire Transistor Performance via Surface Decoration of Metal-Oxide Nanoparticles".ADVANCED MATERIALS INTERFACES 4.12(2017).
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