CAS OpenIR  > 多相复杂系统国家重点实验室
Manipulating III-V Nanowire Transistor Performance via Surface Decoration of Metal-Oxide Nanoparticles
Wang, Fengyun1,2; Yip, SenPo3,4,5; Dong, Guofa3,5; Xiu, Fei6,7; Song, Longfei1,2; Yang, Zaixing8; Li, Dapan3,5; Hung, Tak Fu3; Han, Ning9; Ho, Johnny C.3,4,5
2017-06-23
Source PublicationADVANCED MATERIALS INTERFACES
ISSN2196-7350
Volume4Issue:12
Abstract

Recently, III-V semiconductor nanowires (NWs) are widely investigated as field-effect transistors (FETs) for high-performance electronics, optoelectronic, and others; nevertheless, effective control in their device performances, especially the threshold voltage is still not well attained, which can potentially limit their practical uses for technological applications. This study reports a simple but highly reliable metal-oxide nanoparticle (NP) surface decoration approach onto the device channel in order to manipulate electrical characteristics of III-V NWFETs, such as the threshold voltage and transistor operation, through the manipulation of free electrons in the NW channel (i.e., InAs, InP, and In0.7Ga0.3As) via depositing various metal-oxide NPs with different work functions. Without any passivation layer, this decoration approach can yield the stable NW device characteristics in ambient. Notably, the versatility of our decoration scheme has also been illustrated through the realization of high-performance enhancement-mode InAs NW-paralleled-arrayed devices as well as the configuration of highly efficient InAs NW NMOS inverters, comprising of both depletion and enhancement mode devices. All these results further elucidate the technological potential of this decoration approach for future high-performance, low-power nanoelectronic device fabrication, and circuit integration.

KeywordEnhancement Modes Iii-v Nanowires Metal-oxide Nanoparticles Surface Decoration Threshold Voltage
SubtypeArticle
WOS HeadingsScience & Technology ; Physical Sciences ; Technology
DOI10.1002/admi.201700260
Indexed BySCI
Language英语
WOS KeywordElectronic Transport-properties ; Thin-film Transistors ; Electrical-properties ; Gaas Nanowires ; Solar-cells ; Inas Nanowires ; Photodetectors ; Silicon ; Voltage ; Sensors
WOS Research AreaChemistry ; Materials Science
WOS SubjectChemistry, Multidisciplinary ; Materials Science, Multidisciplinary
Funding OrganizationNational Natural Science Foundation of China(51402160 ; Natural Science Foundation of Shandong Province, China(ZR2014EMQ011) ; General Research Fund(CityU 11204614) ; Theme-based Research Scheme of the Research Grants Council of Hong Kong SAR, China(T42-103/16-N) ; Science Technology and Innovation Committee of Shenzhen Municipality(JCYJ20160229165240684) ; Taishan Scholar Program of Shandong Province, China ; 51672229 ; 61504151)
WOS IDWOS:000404129600013
Citation statistics
Cited Times:9[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.ipe.ac.cn/handle/122111/22706
Collection多相复杂系统国家重点实验室
Affiliation1.Qingdao Univ, Coll Phys, Qingdao 266071, Peoples R China
2.Qingdao Univ, Cultivat Base State Key Lab, Qingdao 266071, Peoples R China
3.City Univ Hong Kong, Dept Phys & Mat Sci, 83 Tat Chee Ave, Kowloon, Hong Kong, Peoples R China
4.City Univ Hong Kong, State Key Lab Millimeter Waves, 83 Tat Chee Ave, Kowloon, Hong Kong, Peoples R China
5.City Univ Hong Kong, Shenzhen Res Inst, Shenzhen 518057, Peoples R China
6.Nanjing Tech Univ NanjingTech, Jiangsu Natl Synerget Innovat Ctr Adv Mat SICAM, KLOFE, Nanjing 211816, Jiangsu, Peoples R China
7.Nanjing Tech Univ NanjingTech, Jiangsu Natl Synerget Innovat Ctr Adv Mat SICAM, Inst Adv Mat, Nanjing 211816, Jiangsu, Peoples R China
8.Shandong Univ, Sch Microelect & Ctr Nanoelect, Jinan 250100, Peoples R China
9.Chinese Acad Sci, Inst Proc Engn, State Key Lab Multiphase Complex Syst, Beijing 100190, Peoples R China
Recommended Citation
GB/T 7714
Wang, Fengyun,Yip, SenPo,Dong, Guofa,et al. Manipulating III-V Nanowire Transistor Performance via Surface Decoration of Metal-Oxide Nanoparticles[J]. ADVANCED MATERIALS INTERFACES,2017,4(12).
APA Wang, Fengyun.,Yip, SenPo.,Dong, Guofa.,Xiu, Fei.,Song, Longfei.,...&Ho, Johnny C..(2017).Manipulating III-V Nanowire Transistor Performance via Surface Decoration of Metal-Oxide Nanoparticles.ADVANCED MATERIALS INTERFACES,4(12).
MLA Wang, Fengyun,et al."Manipulating III-V Nanowire Transistor Performance via Surface Decoration of Metal-Oxide Nanoparticles".ADVANCED MATERIALS INTERFACES 4.12(2017).
Files in This Item:
File Name/Size DocType Version Access License
Manipulating III-V N(2382KB)期刊论文出版稿限制开放CC BY-NC-SAApplication Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Wang, Fengyun]'s Articles
[Yip, SenPo]'s Articles
[Dong, Guofa]'s Articles
Baidu academic
Similar articles in Baidu academic
[Wang, Fengyun]'s Articles
[Yip, SenPo]'s Articles
[Dong, Guofa]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Wang, Fengyun]'s Articles
[Yip, SenPo]'s Articles
[Dong, Guofa]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.