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Complementary Metal Oxide Semiconductor-Compatible, High-Mobility, < 111 >-Oriented GaSb Nanowires Enabled by Vapor-Solid-Solid Chemical Vapor Deposition
Yang, Zai-xing1,2,3; Liu, Lizhe5; Yip, SenPo3,6; Li, Dapan3; Shen, Lifan4,6; Zhou, Ziyao3; Han, Ning7; Hung, Tak Fu3; Pun, Edwin Yue-Bun4,6; Wu, Xinglong5; Song, Aimin1,2,8; Ho, Johnny C.3,6
2017-04-01
发表期刊ACS NANO
ISSN1936-0851
卷号11期号:4页码:4237-4246
摘要Using CMOS-compatible Pd catalysts, we demonstrated the formation of high-mobility < 111 >-oriented GaSb nanowires (NWs) via vapor solid solid (VSS) growth by surfactant-assisted chemical vapor deposition through a complementary experimental and theoretical approach. In contrast to NWs formed by the conventional vapor liquid solid (VLS) mechanism, cylindrical-shaped Pd5Ga4 catalytic seeds were present in our Pd-catalyzed VSS-NWs. As solid catalysts, stoichiometric Pd5Ga4 was found to have the lowest crystal surface energy and thus giving rise to a minimal surface diffusion as well as an optimal in-plane interface orientation at the seed/NW interface for efficient epitaxial NW nucleation. These VSS characteristics led to the growth of slender NWs with diameters down to 26.9 +/- 3.5 nm. Over 95% high crystalline quality NWs were grown in < 111 > orientation for a wide diameter range of between 10 and 70 nm. Back-gated field-effect transistors (FETs) fabricated using the Pd-catalyzed GaSb NWs exhibit a superior peak hole mobility of, similar to 330 cm(2) V-1 close to the mobility limit for a NW channel diameter of similar to 30 nm with a free carrier concentration of similar to 10(18) cm(-3). This suggests that the NWs have excellent homogeneity in phase purity, growth orientation, surface morphology and electrical characteristics. Contact printing process was also used to fabricate large-scale assembly of Pd-catalyzed GaSb NW parallel arrays, confirming the potential constructions and applications of these high-performance electronic devices.
关键词Gasb Nanowires Growth Orientation High Mobility Vapor-solid-solid Interface Plane Orientation In-plane Lattice Mismatch
文章类型Article
WOS标题词Science & Technology ; Physical Sciences ; Technology
DOI10.1021/acsnano.7b01217
收录类别SCI
语种英语
关键词[WOS]NEAR-INFRARED PHOTODETECTORS ; AUGMENTED-WAVE METHOD ; SINGLE INAS NANOWIRE ; SILICON NANOWIRES ; GAAS NANOWIRES ; III-V ; ELECTRICAL-PROPERTIES ; GROWTH ; PALLADIUM ; CATALYST
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Materials Science
WOS类目Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
项目资助者program of Shandong University, the General Research Fund(CityU 11204614) ; Theme-based Research Scheme of the Research Grants Council of Hong Kong SAR, China(T42-103/16-N) ; National Natural Science Foundation of China(11404162 ; State Key Laboratory of Multiphase Complex Systems(MPCS-2015-A-04) ; Science Technology and Innovation Committee of Shenzhen Municipality(JCYJ20160229165240684) ; PAPD ; Natural Science Foundations of Jiangsu Province(BK20130549) ; 51672229 ; 61504151)
WOS记录号WOS:000400233200085
引用统计
被引频次:5[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ipe.ac.cn/handle/122111/22827
专题多相复杂系统国家重点实验室
作者单位1.Shandong Univ, Ctr Nanoelect, Jinan 250100, Peoples R China
2.Shandong Univ, Sch Microelect, Jinan 250100, Peoples R China
3.City Univ Hong Kong, Dept Phys & Mat Sci, 83 Tat Chee Ave, Kowloon, Hong Kong, Peoples R China
4.City Univ Hong Kong, Dept Elect Engn, 83 Tat Chee Ave, Kowloon, Hong Kong, Peoples R China
5.Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Natl Lab Solid State Microstruct, Key Lab Modern Acoust,MOE,Inst Acoust, Nanjing 210093, Jiangsu, Peoples R China
6.City Univ Hong Kong, State Key Lab Millimeter Waves, 83 Tat Chee Ave, Kowloon, Hong Kong, Peoples R China
7.Chinese Acad Sci, Inst Proc Engn, State Key Lab Multiphase Complex Syst, Beijing 100190, Peoples R China
8.Univ Manchester, Sch Elect & Elect Engn, Manchester M13 9PL, Lancs, England
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Yang, Zai-xing,Liu, Lizhe,Yip, SenPo,et al. Complementary Metal Oxide Semiconductor-Compatible, High-Mobility, < 111 >-Oriented GaSb Nanowires Enabled by Vapor-Solid-Solid Chemical Vapor Deposition[J]. ACS NANO,2017,11(4):4237-4246.
APA Yang, Zai-xing.,Liu, Lizhe.,Yip, SenPo.,Li, Dapan.,Shen, Lifan.,...&Ho, Johnny C..(2017).Complementary Metal Oxide Semiconductor-Compatible, High-Mobility, < 111 >-Oriented GaSb Nanowires Enabled by Vapor-Solid-Solid Chemical Vapor Deposition.ACS NANO,11(4),4237-4246.
MLA Yang, Zai-xing,et al."Complementary Metal Oxide Semiconductor-Compatible, High-Mobility, < 111 >-Oriented GaSb Nanowires Enabled by Vapor-Solid-Solid Chemical Vapor Deposition".ACS NANO 11.4(2017):4237-4246.
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