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ZnO Nanofiber Thin-Film Transistors with Low-Operating Voltages
Wang, Fengyun1; Song, Longfei1; Zhang, Hongchao1; Meng, You1; Luo, Linqu1; Xi, Yan1; Liu, Lei2,3; Han, Ning4; Yang, Zaixing2,3; Tang, Jie1; Shan, Fukai1,5; Ho, Johnny C.6,7,8
2018
发表期刊ADVANCED ELECTRONIC MATERIALS
ISSN2199-160X
卷号4期号:1
摘要Although significant progress has been made towards using ZnO nanofibers (NFs) in future high-performance and low-cost electronics, they still suffer from insufficient device performance caused by substantial surface roughness (i.e., irregularity) and granular structure of the obtained NFs. Here, a simple one-step electrospinning process (i.e., without hot-press) is presented to obtain controllable ZnO NF networks to achieve high-performance, large-scale, and low-operating-power thin-film transistors. By precisely manipulating annealing temperature during NF fabrication, their crystallinity, grain size distribution, surface morphology, and corresponding device performance can be regulated reliably for enhanced transistor performances. For the optimal annealing temperature of 500 degrees C, the device exhibits impressive electrical characteristics, including a small positive threshold voltage (V-th) of approximate to 0.9 V, a low leakage current of approximate to 10(-12) A, and a superior on/off current ratio of approximate to 10(6), corresponding to one of the best-performed ZnO NF devices reported to date. When high- AlOx thin films are employed as gate dielectrics, the source/drain voltage (V-DS) can be substantially reduced by 10x to a range of only 0-3 V, along with a 10x improvement in mobility to a respectable value of 0.2 cm(2) V-1 s(-1). These results indicate the potential of these nanofibers for use in next-generation low-power devices.
关键词Annealing Electrospinning Low-operating Voltage Transistor Zno Nanofiber
文章类型Article
WOS标题词Science & Technology ; Technology ; Physical Sciences
DOI10.1002/aelm.201700336
收录类别SCI
语种英语
关键词[WOS]TEMPLATE-ASSISTED ELECTRODEPOSITION ; ELECTRICAL-TRANSPORT PROPERTIES ; PERFORMANCE ELECTRONIC DEVICES ; PHOTOCHEMICAL ACTIVATION ; TEMPERATURE FABRICATION ; RAPID FABRICATION ; SILICON NANOWIRES ; GAAS NANOWIRES ; SURFACE ; ARRAYS
WOS研究方向Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
项目资助者National Natural Science Foundation of China(51402160 ; Natural Science Foundation of Shandong Province, China(ZR2014EMQ011) ; General Research Fund of the Research Grants Council of Hong Kong SAR, China(CityU 11275916) ; Science Technology and Innovation Committee of Shenzhen Municipality(JCYJ20160229165240684) ; National Demonstration Center for Experimental Applied Physics Education (Qingdao University) ; Taishan Scholar Program of Shandong Province, China ; 51672229 ; 51472130 ; 51672142 ; 61504151)
WOS记录号WOS:000419670400010
引用统计
文献类型期刊论文
条目标识符http://ir.ipe.ac.cn/handle/122111/23586
专题多相复杂系统国家重点实验室
作者单位1.Qingdao Univ, Coll Phys & Cultivat Base, State Key Lab, Qingdao 266071, Peoples R China
2.Shandong Univ, Sch Microelect, Jinan 250100, Shandong, Peoples R China
3.Shandong Univ, Ctr Nanoelect, Jinan 250100, Shandong, Peoples R China
4.Chinese Acad Sci, State Key Lab Multiphase Complex Syst, Inst Proc Engn, Beijing 100190, Peoples R China
5.Qingdao Univ, Coll Elect & Informat Engn, Qingdao 266071, Peoples R China
6.City Univ Hong Kong, Dept Mat Sci & Engn, Kowloon 999077, Hong Kong, Peoples R China
7.City Univ Hong Kong, State Key Lab Millimeter Waves, Kowloon 999077, Hong Kong, Peoples R China
8.City Univ Hong Kong, Shenzhen Res Inst, Shenzhen 518057, Peoples R China
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Wang, Fengyun,Song, Longfei,Zhang, Hongchao,et al. ZnO Nanofiber Thin-Film Transistors with Low-Operating Voltages[J]. ADVANCED ELECTRONIC MATERIALS,2018,4(1).
APA Wang, Fengyun.,Song, Longfei.,Zhang, Hongchao.,Meng, You.,Luo, Linqu.,...&Ho, Johnny C..(2018).ZnO Nanofiber Thin-Film Transistors with Low-Operating Voltages.ADVANCED ELECTRONIC MATERIALS,4(1).
MLA Wang, Fengyun,et al."ZnO Nanofiber Thin-Film Transistors with Low-Operating Voltages".ADVANCED ELECTRONIC MATERIALS 4.1(2018).
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