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题名:
ZnO Nanofiber Thin-Film Transistors with Low-Operating Voltages
作者: Wang, Fengyun1; Song, Longfei1; Zhang, Hongchao1; Meng, You1; Luo, Linqu1; Xi, Yan1; Liu, Lei2,3; Han, Ning4; Yang, Zaixing2,3; Tang, Jie1; Shan, Fukai1,5; Ho, Johnny C.6,7,8
刊名: ADVANCED ELECTRONIC MATERIALS
出版日期: 2018
卷号: 4, 期号:1
关键词: annealing ; electrospinning ; low-operating voltage ; transistor ; ZnO nanofiber
收录类别: SCI
WOS记录号: WOS:000419670400010
DOI: 10.1002/aelm.201700336
文章类型: Article
英文摘要: Although significant progress has been made towards using ZnO nanofibers (NFs) in future high-performance and low-cost electronics, they still suffer from insufficient device performance caused by substantial surface roughness (i.e., irregularity) and granular structure of the obtained NFs. Here, a simple one-step electrospinning process (i.e., without hot-press) is presented to obtain controllable ZnO NF networks to achieve high-performance, large-scale, and low-operating-power thin-film transistors. By precisely manipulating annealing temperature during NF fabrication, their crystallinity, grain size distribution, surface morphology, and corresponding device performance can be regulated reliably for enhanced transistor performances. For the optimal annealing temperature of 500 degrees C, the device exhibits impressive electrical characteristics, including a small positive threshold voltage (V-th) of approximate to 0.9 V, a low leakage current of approximate to 10(-12) A, and a superior on/off current ratio of approximate to 10(6), corresponding to one of the best-performed ZnO NF devices reported to date. When high- AlOx thin films are employed as gate dielectrics, the source/drain voltage (V-DS) can be substantially reduced by 10x to a range of only 0-3 V, along with a 10x improvement in mobility to a respectable value of 0.2 cm(2) V-1 s(-1). These results indicate the potential of these nanofibers for use in next-generation low-power devices.
WOS标题词: Science & Technology ; Technology ; Physical Sciences
类目[WOS]: Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
研究领域[WOS]: Science & Technology - Other Topics ; Materials Science ; Physics
关键词[WOS]: TEMPLATE-ASSISTED ELECTRODEPOSITION ; ELECTRICAL-TRANSPORT PROPERTIES ; PERFORMANCE ELECTRONIC DEVICES ; PHOTOCHEMICAL ACTIVATION ; TEMPERATURE FABRICATION ; RAPID FABRICATION ; SILICON NANOWIRES ; GAAS NANOWIRES ; SURFACE ; ARRAYS
项目资助者: National Natural Science Foundation of China(51402160 ; Natural Science Foundation of Shandong Province, China(ZR2014EMQ011) ; General Research Fund of the Research Grants Council of Hong Kong SAR, China(CityU 11275916) ; Science Technology and Innovation Committee of Shenzhen Municipality(JCYJ20160229165240684) ; National Demonstration Center for Experimental Applied Physics Education (Qingdao University) ; Taishan Scholar Program of Shandong Province, China ; 51672229 ; 51472130 ; 51672142 ; 61504151)
语种: 英语
ISSN号: 2199-160X
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.ipe.ac.cn/handle/122111/23586
Appears in Collections:多相复杂系统国家重点实验室_期刊论文

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作者单位: 1.Qingdao Univ, Coll Phys & Cultivat Base, State Key Lab, Qingdao 266071, Peoples R China
2.Shandong Univ, Sch Microelect, Jinan 250100, Shandong, Peoples R China
3.Shandong Univ, Ctr Nanoelect, Jinan 250100, Shandong, Peoples R China
4.Chinese Acad Sci, State Key Lab Multiphase Complex Syst, Inst Proc Engn, Beijing 100190, Peoples R China
5.Qingdao Univ, Coll Elect & Informat Engn, Qingdao 266071, Peoples R China
6.City Univ Hong Kong, Dept Mat Sci & Engn, Kowloon 999077, Hong Kong, Peoples R China
7.City Univ Hong Kong, State Key Lab Millimeter Waves, Kowloon 999077, Hong Kong, Peoples R China
8.City Univ Hong Kong, Shenzhen Res Inst, Shenzhen 518057, Peoples R China

Recommended Citation:
Wang, Fengyun,Song, Longfei,Zhang, Hongchao,et al. ZnO Nanofiber Thin-Film Transistors with Low-Operating Voltages[J]. ADVANCED ELECTRONIC MATERIALS,2018,4(1).
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