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High-performance enhancement-mode thin-film transistors based on Mg-doped In2O3 nanofiber networks
Zhang, Hongchao1,2; Meng, You1,2; Song, Longfei1,2; Luo, Linqu1,2; Qin, Yuanbin3; Han, Ning4; Yang, Zaixing5,6; Liu, Lei1,2; Ho, Johnny C.7,8,9; Wang, Fengyun1,2
2018-03-01
发表期刊NANO RESEARCH
ISSN1998-0124
卷号11期号:3页码:1227-1237
摘要Although In2O3 nanofibers (NFs) are well-known candidates as active materials for next-generation, low-cost electronics, these NF based devices still suffer from high leakage current, insufficient on-off current ratios (I-on/I-off), and large, negative threshold voltages (V-TH), leading to poor device performance, parasitic energy consumption, and rather complicated circuit design. Here, instead of the conventional surface modification of In2O3 NFs, we present a one-step electrospinning process (i.e., without hot-press) to obtain controllable Mg-doped In2O3 NF networks to achieve high-performance enhancement-mode thin-film transistors (TFTs). By simply adjusting the Mg doping concentration, the device performance can be manipulated precisely. For the optimal doping concentration of 2 mol%, the devices exhibit a small V-TH (3.2 V), high saturation current (1.1 x 10(-4) A), large on/off current ratio (> 10(8)), and respectable peak carrier mobility (2.04 cm(2)/(V.s)), corresponding to one of the best device performances among all 1D metal-oxide NFs based devices reported so far. When high-kappa HfOx thin films are employed as the gate dielectric, their electron mobility and V-TH can be further improved to 5.30 cm(2)/(V.s) and 0.9 V, respectively, which demonstrates the promising prospect of these Mg-doped In2O3 NF networks for high-performance, large-scale, and low-power electronics.
关键词In2o3 Nanofiber Transistor Doping Threshold Voltage Enhancement Mode
文章类型Article
WOS标题词Science & Technology ; Physical Sciences ; Technology
DOI10.1007/s12274-017-1735-8
收录类别SCI
语种英语
关键词[WOS]FIELD-EFFECT TRANSISTORS ; NANOWIRE TRANSISTORS ; SENSING PROPERTIES ; FABRICATION ; ELECTRONICS ; DEVICES ; TRANSPARENT ; TEMPERATURE ; GROWTH
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
项目资助者National Natural Science Foundation of China(51402160 ; General Research Fund of the Research Grants Council of Hong Kong, China(CityU 11275916) ; Natural Science Foundation of Shandong Province, China(ZR2014EMQ011) ; Taishan Scholar Program of Shandong Province, China ; Science Technology, and Innovation Committee of Shenzhen Municipality(JCYJ20160229165240684) ; Shenzhen Research Institute, City University of Hong Kong ; National Demonstration Center for Experimental Applied Physics Education (Qingdao University) ; 51302154 ; 51672229)
WOS记录号WOS:000424049300005
引用统计
文献类型期刊论文
条目标识符http://ir.ipe.ac.cn/handle/122111/23983
专题多相复杂系统国家重点实验室
作者单位1.Qingdao Univ, Coll Phys, Qingdao 266071, Peoples R China
2.Qingdao Univ, Cultivat Base State Key Lab, Qingdao 266071, Peoples R China
3.Xi An Jiao Tong Univ, State Key Lab Mech Behav Mat, Ctr Adv Mat Performance Nanoscale, Xian 710049, Shaanxi, Peoples R China
4.Chinese Acad Sci, Inst Proc Engn, State Key Lab Multiphase Complex Syst, Beijing 100190, Peoples R China
5.Shandong Univ, Sch Microelect, Jinan 250100, Shandong, Peoples R China
6.Shandong Univ, Ctr Nanoelect, Jinan 250100, Shandong, Peoples R China
7.City Univ Hong Kong, Dept Mat Sci & Engn, 83 Tat Chee Ave, Kowloon, Hong Kong, Peoples R China
8.City Univ Hong Kong, State Key Lab Millimeter Waves, 83 Tat Chee Ave, Kowloon, Hong Kong, Peoples R China
9.City Univ Hong Kong, Shenzhen Res Inst, Shenzhen 518057, Peoples R China
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GB/T 7714
Zhang, Hongchao,Meng, You,Song, Longfei,et al. High-performance enhancement-mode thin-film transistors based on Mg-doped In2O3 nanofiber networks[J]. NANO RESEARCH,2018,11(3):1227-1237.
APA Zhang, Hongchao.,Meng, You.,Song, Longfei.,Luo, Linqu.,Qin, Yuanbin.,...&Wang, Fengyun.(2018).High-performance enhancement-mode thin-film transistors based on Mg-doped In2O3 nanofiber networks.NANO RESEARCH,11(3),1227-1237.
MLA Zhang, Hongchao,et al."High-performance enhancement-mode thin-film transistors based on Mg-doped In2O3 nanofiber networks".NANO RESEARCH 11.3(2018):1227-1237.
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