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Chalcogen passivation: an in-situ method to manipulate the morphology and electrical property of GaAs nanowires
Yang, Zai-xing1,2,3; Yin, Yanxue2,3; Sun, Jiamin1,2,3; Bian, Luozhen1,2,3; Han, Ning4; Zhou, Ziyao5,6; Shu, Lei5,6; Wang, Fengyun7,8; Chen, Yunfa4; Song, Aimin2,3,9; Ho, Johnny C.5,6,10
2018-05-02
发表期刊SCIENTIFIC REPORTS
ISSN2045-2322
卷号8
摘要Recently, owing to the large surface-area-to-volume ratio of nanowires (NWs), manipulation of their surface states becomes technologically important and being investigated for various applications. Here, an in-situ surfactant-assisted chemical vapor deposition is developed with various chalcogens (e.g. S, Se and Te) as the passivators to enhance the NW growth and to manipulate the controllable p-n conductivity switching of fabricated NW devices. Due to the optimal size effect and electronegativity matching, Se is observed to provide the best NW surface passivation in diminishing the space charge depletion effect induced by the oxide shell and yielding the less p-type (i.e. inversion) or even insulating conductivity, as compared with S delivering the intense p-type conductivity for thin NWs with the diameter of similar to 30 nm. Te does not only provide the surface passivation, but also dopes the NW surface into n-type conductivity by donating electrons. All of the results can be extended to other kinds of NWs with similar surface effects, resulting in careful device design considerations with appropriate surface passivation for achieving the optimal NW device performances.
文章类型Article
WOS标题词Science & Technology
DOI10.1038/s41598-018-25209-x
收录类别SCI
语种英语
关键词[WOS]CORE-SHELL NANOWIRES ; CHEMICAL-VAPOR-DEPOSITION ; SURFACE PASSIVATION ; GASB NANOWIRES ; SOLAR-CELLS ; MOBILITY ; SUPERLATTICES ; PHOTOEMISSION ; ABSORPTION ; MONOLAYERS
WOS研究方向Science & Technology - Other Topics
WOS类目Multidisciplinary Sciences
项目资助者National Key R&D Program of China(2017YFA0305500 ; Science Technology and Innovation Committee of Shenzhen Municipality(JCYJ20170307093131123 ; "Qilu young scholar" program of Shandong University ; General Research Fund of the Research Grants Council of Hong Kong SAR, China(CityU 11275916) ; National Natural Science Foundation of China(11404162 ; CAS-CSIRO project of the Bureau of International Co-operation of Chinese Academy of Sciences(122111KYSB20150064) ; 2016YFC0207100) ; JCYJ20160229165240684) ; 51672229 ; 51602314 ; 61504151)
WOS记录号WOS:000431204500008
引用统计
文献类型期刊论文
条目标识符http://ir.ipe.ac.cn/handle/122111/24410
专题多相复杂系统国家重点实验室
作者单位1.Shandong Univ, Shenzhen Res Inst, Shenzhen 518057, Peoples R China
2.Shandong Univ, Ctr Nanoelect, Jinan 250100, Shandong, Peoples R China
3.Shandong Univ, Sch Microelect, Jinan 250100, Shandong, Peoples R China
4.Chinese Acad Sci, Inst Proc Engn, State Key Lab Multiphase Complex Syst, Beijing 100190, Peoples R China
5.City Univ Hong Kong, Dept Mat Sci & Engn, 83 Tat Chee Ave, Kowloon, Hong Kong, Peoples R China
6.City Univ Hong Kong, Shenzhen Res Inst, Shenzhen 518057, Peoples R China
7.Qingdao Univ, Coll Phys, Qingdao 266071, Peoples R China
8.Qingdao Univ, Cultivat Base State Key Lab, Qingdao 266071, Peoples R China
9.Univ Manchester, Sch Elect & Elect Engn, Manchester M13 9PL, Lancs, England
10.City Univ Hong Kong, State Key Lab Millimeter Waves, 83 Tat Chee Ave, Kowloon, Hong Kong, Peoples R China
推荐引用方式
GB/T 7714
Yang, Zai-xing,Yin, Yanxue,Sun, Jiamin,et al. Chalcogen passivation: an in-situ method to manipulate the morphology and electrical property of GaAs nanowires[J]. SCIENTIFIC REPORTS,2018,8.
APA Yang, Zai-xing.,Yin, Yanxue.,Sun, Jiamin.,Bian, Luozhen.,Han, Ning.,...&Ho, Johnny C..(2018).Chalcogen passivation: an in-situ method to manipulate the morphology and electrical property of GaAs nanowires.SCIENTIFIC REPORTS,8.
MLA Yang, Zai-xing,et al."Chalcogen passivation: an in-situ method to manipulate the morphology and electrical property of GaAs nanowires".SCIENTIFIC REPORTS 8(2018).
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