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Chalcogen passivation: an in-situ method to manipulate the morphology and electrical property of GaAs nanowires
Yang, Zai-xing1,2,3; Yin, Yanxue2,3; Sun, Jiamin1,2,3; Bian, Luozhen1,2,3; Han, Ning4; Zhou, Ziyao5,6; Shu, Lei5,6; Wang, Fengyun7,8; Chen, Yunfa4; Song, Aimin2,3,9; Ho, Johnny C.5,6,10
2018-05-02
Source PublicationSCIENTIFIC REPORTS
ISSN2045-2322
Volume8
Abstract

Recently, owing to the large surface-area-to-volume ratio of nanowires (NWs), manipulation of their surface states becomes technologically important and being investigated for various applications. Here, an in-situ surfactant-assisted chemical vapor deposition is developed with various chalcogens (e.g. S, Se and Te) as the passivators to enhance the NW growth and to manipulate the controllable p-n conductivity switching of fabricated NW devices. Due to the optimal size effect and electronegativity matching, Se is observed to provide the best NW surface passivation in diminishing the space charge depletion effect induced by the oxide shell and yielding the less p-type (i.e. inversion) or even insulating conductivity, as compared with S delivering the intense p-type conductivity for thin NWs with the diameter of similar to 30 nm. Te does not only provide the surface passivation, but also dopes the NW surface into n-type conductivity by donating electrons. All of the results can be extended to other kinds of NWs with similar surface effects, resulting in careful device design considerations with appropriate surface passivation for achieving the optimal NW device performances.

SubtypeArticle
WOS HeadingsScience & Technology
DOI10.1038/s41598-018-25209-x
Indexed BySCI
Language英语
WOS KeywordCore-shell Nanowires ; Chemical-vapor-deposition ; Surface Passivation ; Gasb Nanowires ; Solar-cells ; Mobility ; Superlattices ; Photoemission ; Absorption ; Monolayers
WOS Research AreaScience & Technology - Other Topics
WOS SubjectMultidisciplinary Sciences
Funding OrganizationNational Key R&D Program of China(2017YFA0305500 ; Science Technology and Innovation Committee of Shenzhen Municipality(JCYJ20170307093131123
WOS IDWOS:000431204500008
Citation statistics
Cited Times:2[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.ipe.ac.cn/handle/122111/24410
Collection多相复杂系统国家重点实验室
Affiliation1.Shandong Univ, Shenzhen Res Inst, Shenzhen 518057, Peoples R China
2.Shandong Univ, Ctr Nanoelect, Jinan 250100, Shandong, Peoples R China
3.Shandong Univ, Sch Microelect, Jinan 250100, Shandong, Peoples R China
4.Chinese Acad Sci, Inst Proc Engn, State Key Lab Multiphase Complex Syst, Beijing 100190, Peoples R China
5.City Univ Hong Kong, Dept Mat Sci & Engn, 83 Tat Chee Ave, Kowloon, Hong Kong, Peoples R China
6.City Univ Hong Kong, Shenzhen Res Inst, Shenzhen 518057, Peoples R China
7.Qingdao Univ, Coll Phys, Qingdao 266071, Peoples R China
8.Qingdao Univ, Cultivat Base State Key Lab, Qingdao 266071, Peoples R China
9.Univ Manchester, Sch Elect & Elect Engn, Manchester M13 9PL, Lancs, England
10.City Univ Hong Kong, State Key Lab Millimeter Waves, 83 Tat Chee Ave, Kowloon, Hong Kong, Peoples R China
Recommended Citation
GB/T 7714
Yang, Zai-xing,Yin, Yanxue,Sun, Jiamin,et al. Chalcogen passivation: an in-situ method to manipulate the morphology and electrical property of GaAs nanowires[J]. SCIENTIFIC REPORTS,2018,8.
APA Yang, Zai-xing.,Yin, Yanxue.,Sun, Jiamin.,Bian, Luozhen.,Han, Ning.,...&Ho, Johnny C..(2018).Chalcogen passivation: an in-situ method to manipulate the morphology and electrical property of GaAs nanowires.SCIENTIFIC REPORTS,8.
MLA Yang, Zai-xing,et al."Chalcogen passivation: an in-situ method to manipulate the morphology and electrical property of GaAs nanowires".SCIENTIFIC REPORTS 8(2018).
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