| Chalcogen passivation: an in-situ method to manipulate the morphology and electrical property of GaAs nanowires | |
| Yang, Zai-xing1,2,3; Yin, Yanxue2,3; Sun, Jiamin1,2,3; Bian, Luozhen1,2,3; Han, Ning4; Zhou, Ziyao5,6; Shu, Lei5,6; Wang, Fengyun7,8; Chen, Yunfa4; Song, Aimin2,3,9; Ho, Johnny C.5,6,10 | |
| 2018-05-02 | |
| Source Publication | SCIENTIFIC REPORTS
 |
| ISSN | 2045-2322 |
| Volume | 8 |
| Abstract | Recently, owing to the large surface-area-to-volume ratio of nanowires (NWs), manipulation of their surface states becomes technologically important and being investigated for various applications. Here, an in-situ surfactant-assisted chemical vapor deposition is developed with various chalcogens (e.g. S, Se and Te) as the passivators to enhance the NW growth and to manipulate the controllable p-n conductivity switching of fabricated NW devices. Due to the optimal size effect and electronegativity matching, Se is observed to provide the best NW surface passivation in diminishing the space charge depletion effect induced by the oxide shell and yielding the less p-type (i.e. inversion) or even insulating conductivity, as compared with S delivering the intense p-type conductivity for thin NWs with the diameter of similar to 30 nm. Te does not only provide the surface passivation, but also dopes the NW surface into n-type conductivity by donating electrons. All of the results can be extended to other kinds of NWs with similar surface effects, resulting in careful device design considerations with appropriate surface passivation for achieving the optimal NW device performances. |
| Subtype | Article |
| WOS Headings | Science & Technology |
| DOI | 10.1038/s41598-018-25209-x |
| Indexed By | SCI |
| Language | 英语 |
| WOS Keyword | CORE-SHELL NANOWIRES ; CHEMICAL-VAPOR-DEPOSITION ; SURFACE PASSIVATION ; GASB NANOWIRES ; SOLAR-CELLS ; MOBILITY ; SUPERLATTICES ; PHOTOEMISSION ; ABSORPTION ; MONOLAYERS |
| WOS Research Area | Science & Technology - Other Topics |
| WOS Subject | Multidisciplinary Sciences |
| Funding Organization | National Key R&D Program of China(2017YFA0305500 ; Science Technology and Innovation Committee of Shenzhen Municipality(JCYJ20170307093131123 ; "Qilu young scholar" program of Shandong University ; General Research Fund of the Research Grants Council of Hong Kong SAR, China(CityU 11275916) ; National Natural Science Foundation of China(11404162 ; CAS-CSIRO project of the Bureau of International Co-operation of Chinese Academy of Sciences(122111KYSB20150064) ; 2016YFC0207100) ; JCYJ20160229165240684) ; 51672229 ; 51602314 ; 61504151) |
| WOS ID | WOS:000431204500008 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.ipe.ac.cn/handle/122111/24410 |
| Collection | 多相复杂系统国家重点实验室 |
| Affiliation | 1.Shandong Univ, Shenzhen Res Inst, Shenzhen 518057, Peoples R China 2.Shandong Univ, Ctr Nanoelect, Jinan 250100, Shandong, Peoples R China 3.Shandong Univ, Sch Microelect, Jinan 250100, Shandong, Peoples R China 4.Chinese Acad Sci, Inst Proc Engn, State Key Lab Multiphase Complex Syst, Beijing 100190, Peoples R China 5.City Univ Hong Kong, Dept Mat Sci & Engn, 83 Tat Chee Ave, Kowloon, Hong Kong, Peoples R China 6.City Univ Hong Kong, Shenzhen Res Inst, Shenzhen 518057, Peoples R China 7.Qingdao Univ, Coll Phys, Qingdao 266071, Peoples R China 8.Qingdao Univ, Cultivat Base State Key Lab, Qingdao 266071, Peoples R China 9.Univ Manchester, Sch Elect & Elect Engn, Manchester M13 9PL, Lancs, England 10.City Univ Hong Kong, State Key Lab Millimeter Waves, 83 Tat Chee Ave, Kowloon, Hong Kong, Peoples R China |
| Recommended Citation GB/T 7714 | Yang, Zai-xing,Yin, Yanxue,Sun, Jiamin,et al. Chalcogen passivation: an in-situ method to manipulate the morphology and electrical property of GaAs nanowires[J]. SCIENTIFIC REPORTS,2018,8. |
| APA | Yang, Zai-xing.,Yin, Yanxue.,Sun, Jiamin.,Bian, Luozhen.,Han, Ning.,...&Ho, Johnny C..(2018).Chalcogen passivation: an in-situ method to manipulate the morphology and electrical property of GaAs nanowires.SCIENTIFIC REPORTS,8. |
| MLA | Yang, Zai-xing,et al."Chalcogen passivation: an in-situ method to manipulate the morphology and electrical property of GaAs nanowires".SCIENTIFIC REPORTS 8(2018). |
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