CAS OpenIR
Controlled Growth of Heterostructured Ga/GaAs Nanowires with Sharp Schottky Barrier
Wang, Zhou1,2; Wang, Ying1,3; Zhou, Xinyuan1; Yang, Zaixing4,5; Yin, Yanxue4,5; Zhang, Jie2; Han, Ning1,3; Ho, Johnny C.6; Chen, Yunfa1,3
2018-08-01
Source PublicationCRYSTAL GROWTH & DESIGN
ISSN1528-7483
Volume18Issue:8Pages:4438-4444
Abstract

Because of the inevitable Fermi level pinning on surface/interface states of nanowires, achieving high-performance nanowire devices with controllable nanoscale contacts is always challenging but important. Herein, single-crystalline heterostructured Ga/GaAs nanowires with sharp hetero-Schottky interfaces have been successfully synthesized on amorphous substrates by utilizing Au nanoparticles as catalytic seeds via chemical vapor deposition. These nanowires are found to grow with the hemispherical Au7Ga2 catalytic tips following the vapor-liquid-solid mechanism. During the growth, simply by manipulating the source and growth temperatures, the Ga precipitation rate from Au-Ga alloy tips as well as the reaction rate of Ga precipitates with As can be reliably controlled in order to tailor the length (0-170 nm) of Ga nanowire segments obtained in the heterostructure. When configured into field-effect transistors, these Ga/GaAs NWs exhibit the p-type conductivity with a sharp hetero-Schottky barrier of similar to 1.0 eV at the atomically connected Ga segment/ GaAs NW body interface, in which this barrier height is close to the theoretical difference between the GaAs Fermi level (5.15.3 eV) and the Ga work function (similar to 4.3 eV), suggesting the effective formation of nanoscale contact by minimizing the Fermi level pinning, being advantageous for advanced nanoelectronics.

DOI10.1021/acs.cgd.8b00409
Language英语
WOS KeywordGaas Nanowires ; Electronic Transport ; Interface ; Mechanism ; Diffusion ; Contacts ; Quality ; Photovoltaics ; Photonics ; Silicon
Funding ProjectNational Natural Science Foundation of China[61504151] ; National Natural Science Foundation of China[51602314] ; National Natural Science Foundation of China[51672229] ; National Key R&D Program of China[2016YFC0207100] ; National Key R&D Program of China[2017YFA0305500] ; Research Grants Council of Hong Kong SAR, China[CityU 11211317] ; Science Technology and Innovation Committee of Shenzhen Municipality[JCYJ20170818095520778] ; CAS-CSIRO project of the Bureau of International Co-operation of Chinese Academy of Sciences[122111KYSB20150064]
WOS Research AreaChemistry ; Crystallography ; Materials Science
WOS SubjectChemistry, Multidisciplinary ; Crystallography ; Materials Science, Multidisciplinary
Funding OrganizationNational Natural Science Foundation of China ; National Key R&D Program of China ; Research Grants Council of Hong Kong SAR, China ; Science Technology and Innovation Committee of Shenzhen Municipality ; CAS-CSIRO project of the Bureau of International Co-operation of Chinese Academy of Sciences
WOS IDWOS:000440956100031
PublisherAMER CHEMICAL SOC
Citation statistics
Document Type期刊论文
Identifierhttp://ir.ipe.ac.cn/handle/122111/25394
Collection中国科学院过程工程研究所
Corresponding AuthorHan, Ning; Ho, Johnny C.
Affiliation1.Chinese Acad Sci, Inst Proc Engn, State Key Lab Multiphase Complex Syst, Beijing 100190, Peoples R China
2.Beijing Univ Chem Technol, State Key Lab Chem Resource Engn, Beijing 100029, Peoples R China
3.Chinese Acad Sci, Ctr Excellence Reg Atmospher Environm, Inst Urban Environm, Xiamen 361021, Peoples R China
4.Shandong Univ, Ctr Nanoelect, Jinan 250100, Shandong, Peoples R China
5.Shandong Univ, Sch Microelect, Jinan 250100, Shandong, Peoples R China
6.City Univ Hong Kong, Dept Mat Sci & Engn, Hong Kong, Hong Kong, Peoples R China
Recommended Citation
GB/T 7714
Wang, Zhou,Wang, Ying,Zhou, Xinyuan,et al. Controlled Growth of Heterostructured Ga/GaAs Nanowires with Sharp Schottky Barrier[J]. CRYSTAL GROWTH & DESIGN,2018,18(8):4438-4444.
APA Wang, Zhou.,Wang, Ying.,Zhou, Xinyuan.,Yang, Zaixing.,Yin, Yanxue.,...&Chen, Yunfa.(2018).Controlled Growth of Heterostructured Ga/GaAs Nanowires with Sharp Schottky Barrier.CRYSTAL GROWTH & DESIGN,18(8),4438-4444.
MLA Wang, Zhou,et al."Controlled Growth of Heterostructured Ga/GaAs Nanowires with Sharp Schottky Barrier".CRYSTAL GROWTH & DESIGN 18.8(2018):4438-4444.
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