CAS OpenIR
Nonpolar-Oriented Wurtzite InP Nanowires with Electron Mobility Approaching the Theoretical Limit
Sun, Jiamin1,2,3; Yin, Yanxue1,2; Han, Mingming1,2; Yang, Zai-xing1,2,3; Lan, Changyong4; Liu, Lizhe6; Wang, Ying7; Han, Ning7; Shen, Lifan4; Wu, Xinglong6; Ho, Johnny C.4,5
2018-10-01
发表期刊ACS NANO
ISSN1936-0851
卷号12期号:10页码:10410-10418
摘要As an important semiconductor nanomaterial, InP nanowires (NWs) grown with a typical vapor-liquid-solid mechanism are still restricted from their low electron mobility for practical applications. Here, wnonpolaroriented defect-free wurtzite InP NWs with electron mobility of as high as 2000 cm(2) V-1 s(-1) can be successfully synthesized via Pd-catalyzed vapor-solid-solid growth. Specifically, PdIn catalyst particles are involved and found to expose their PdIn{210} planes at the InP nucleation frontier due to their minimal lattice mismatch with nonpolar InP{(2) over bar 110} and {(1) over bar 100} planes. This appropriate lattice registration would then minimize the overall free energy and enable the highly crystalline InP NW growth epitaxially along the nonpolar directions. Because of the minimized crystal defects, the record-high electron mobility of InP NVVs (i.e., 2000 cm(-2) V-1 s(-1) at an electron concentration of 10(17) cm(-3)) results, being close to the theoretical limit of their bulk counterparts. Furthermore, once the top-gated device geometry is employed, the device subthreshold slopes can be impressively reduced down to 91 mV dec(-1) at room temperature. In addition, these NWs exhibit a high photoresponsivity of 10(4) A W-1 with fast rise and decay times of 0.89 and 0.82 s, respectively, in photodetection. All these results evidently demonstrate the promise of nonpolar-oriented InP NWs for next-generation electronics and optoelectronics.
关键词InP nanowire nonpolar electron mobility vapor-solid-solid in-plane lattice mismatch
DOI10.1021/acsnano.8b05947
语种英语
关键词[WOS]INDIUM-PHOSPHIDE NANOWIRES ; PHOTOCONDUCTIVE TERAHERTZ DETECTORS ; CHEMICAL-VAPOR-DEPOSITION ; AUGMENTED-WAVE METHOD ; III-V NANOWIRES ; INAS NANOWIRES ; SILICON NANOWIRES ; SINGLE NANOWIRE ; GASB NANOWIRES ; TRANSPORT-PROPERTIES
资助项目National Key R&D Program of China[2017YFA0305500] ; Shandong Provincial Natural Science Foundation, China[ZR2017MF037] ; Science Technology and Innovation Committee of Shenzhen Municipality[JCYJ20170307093131123] ; Science Technology and Innovation Committee of Shenzhen Municipality[JCYJ20170818095520778] ; "Qilu Young Scholar" program of Shandong University ; General Research Fund of the Research Grants Council of Hong Kong SAR, China[CityU 11211317] ; National Natural Science Foundation of China[11404162] ; National Natural Science Foundation of China[51672229] ; National Natural Science Foundation of China[61504151] ; National Natural Science Foundation of China[51602314] ; CAS-CSIRO project of the Bureau of International Co-operation of Chinese Academy of Sciences[122111KYSB20150064]
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Materials Science
WOS类目Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
项目资助者National Key R&D Program of China ; Shandong Provincial Natural Science Foundation, China ; Science Technology and Innovation Committee of Shenzhen Municipality ; "Qilu Young Scholar" program of Shandong University ; General Research Fund of the Research Grants Council of Hong Kong SAR, China ; National Natural Science Foundation of China ; CAS-CSIRO project of the Bureau of International Co-operation of Chinese Academy of Sciences
WOS记录号WOS:000448751800079
出版者AMER CHEMICAL SOC
引用统计
文献类型期刊论文
条目标识符http://ir.ipe.ac.cn/handle/122111/26464
专题中国科学院过程工程研究所
通讯作者Yang, Zai-xing; Han, Ning; Ho, Johnny C.
作者单位1.Shandong Univ, Ctr Nanoelect, Jinan 250100, Shandong, Peoples R China
2.Shandong Univ, Sch Microelect, Jinan 250100, Shandong, Peoples R China
3.Shandong Univ, Shenzhen Res Inst, Shenzhen 518057, Peoples R China
4.City Univ Hong Kong, Dept Mat Sci & Engn, 83 Tat Chee Ave, Kowloon, Hong Kong, Peoples R China
5.City Univ Hong Kong, Shenzhen Res Inst, Shenzhen 518057, Peoples R China
6.Nanjing Univ, Key Lab Modern Acoust, MOE,Natl Lab Solid State Microstruct, Inst Acoust,Collaborat Innovat Ctr Adv Microstruc, Nanjing 210093, Jiangsu, Peoples R China
7.Chinese Acad Sci, State Key Lab Multiphase Complex Syst, Inst Proc Engn, Beijing 100190, Peoples R China
推荐引用方式
GB/T 7714
Sun, Jiamin,Yin, Yanxue,Han, Mingming,et al. Nonpolar-Oriented Wurtzite InP Nanowires with Electron Mobility Approaching the Theoretical Limit[J]. ACS NANO,2018,12(10):10410-10418.
APA Sun, Jiamin.,Yin, Yanxue.,Han, Mingming.,Yang, Zai-xing.,Lan, Changyong.,...&Ho, Johnny C..(2018).Nonpolar-Oriented Wurtzite InP Nanowires with Electron Mobility Approaching the Theoretical Limit.ACS NANO,12(10),10410-10418.
MLA Sun, Jiamin,et al."Nonpolar-Oriented Wurtzite InP Nanowires with Electron Mobility Approaching the Theoretical Limit".ACS NANO 12.10(2018):10410-10418.
条目包含的文件
条目无相关文件。
个性服务
推荐该条目
保存到收藏夹
查看访问统计
导出为Endnote文件
谷歌学术
谷歌学术中相似的文章
[Sun, Jiamin]的文章
[Yin, Yanxue]的文章
[Han, Mingming]的文章
百度学术
百度学术中相似的文章
[Sun, Jiamin]的文章
[Yin, Yanxue]的文章
[Han, Mingming]的文章
必应学术
必应学术中相似的文章
[Sun, Jiamin]的文章
[Yin, Yanxue]的文章
[Han, Mingming]的文章
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。