CAS OpenIR
Nonpolar-Oriented Wurtzite InP Nanowires with Electron Mobility Approaching the Theoretical Limit
Sun, Jiamin1,2,3; Yin, Yanxue1,2; Han, Mingming1,2; Yang, Zai-xing1,2,3; Lan, Changyong4; Liu, Lizhe6; Wang, Ying7; Han, Ning7; Shen, Lifan4; Wu, Xinglong6; Ho, Johnny C.4,5
2018-10-01
Source PublicationACS NANO
ISSN1936-0851
Volume12Issue:10Pages:10410-10418
AbstractAs an important semiconductor nanomaterial, InP nanowires (NWs) grown with a typical vapor-liquid-solid mechanism are still restricted from their low electron mobility for practical applications. Here, wnonpolaroriented defect-free wurtzite InP NWs with electron mobility of as high as 2000 cm(2) V-1 s(-1) can be successfully synthesized via Pd-catalyzed vapor-solid-solid growth. Specifically, PdIn catalyst particles are involved and found to expose their PdIn{210} planes at the InP nucleation frontier due to their minimal lattice mismatch with nonpolar InP{(2) over bar 110} and {(1) over bar 100} planes. This appropriate lattice registration would then minimize the overall free energy and enable the highly crystalline InP NW growth epitaxially along the nonpolar directions. Because of the minimized crystal defects, the record-high electron mobility of InP NVVs (i.e., 2000 cm(-2) V-1 s(-1) at an electron concentration of 10(17) cm(-3)) results, being close to the theoretical limit of their bulk counterparts. Furthermore, once the top-gated device geometry is employed, the device subthreshold slopes can be impressively reduced down to 91 mV dec(-1) at room temperature. In addition, these NWs exhibit a high photoresponsivity of 10(4) A W-1 with fast rise and decay times of 0.89 and 0.82 s, respectively, in photodetection. All these results evidently demonstrate the promise of nonpolar-oriented InP NWs for next-generation electronics and optoelectronics.
KeywordInP nanowire nonpolar electron mobility vapor-solid-solid in-plane lattice mismatch
DOI10.1021/acsnano.8b05947
Language英语
WOS KeywordINDIUM-PHOSPHIDE NANOWIRES ; PHOTOCONDUCTIVE TERAHERTZ DETECTORS ; CHEMICAL-VAPOR-DEPOSITION ; AUGMENTED-WAVE METHOD ; III-V NANOWIRES ; INAS NANOWIRES ; SILICON NANOWIRES ; SINGLE NANOWIRE ; GASB NANOWIRES ; TRANSPORT-PROPERTIES
Funding ProjectNational Key R&D Program of China[2017YFA0305500] ; Shandong Provincial Natural Science Foundation, China[ZR2017MF037] ; Science Technology and Innovation Committee of Shenzhen Municipality[JCYJ20170307093131123] ; Science Technology and Innovation Committee of Shenzhen Municipality[JCYJ20170818095520778] ; "Qilu Young Scholar" program of Shandong University ; General Research Fund of the Research Grants Council of Hong Kong SAR, China[CityU 11211317] ; National Natural Science Foundation of China[11404162] ; National Natural Science Foundation of China[51672229] ; National Natural Science Foundation of China[61504151] ; National Natural Science Foundation of China[51602314] ; CAS-CSIRO project of the Bureau of International Co-operation of Chinese Academy of Sciences[122111KYSB20150064]
WOS Research AreaChemistry ; Science & Technology - Other Topics ; Materials Science
WOS SubjectChemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
Funding OrganizationNational Key R&D Program of China ; Shandong Provincial Natural Science Foundation, China ; Science Technology and Innovation Committee of Shenzhen Municipality ; "Qilu Young Scholar" program of Shandong University ; General Research Fund of the Research Grants Council of Hong Kong SAR, China ; National Natural Science Foundation of China ; CAS-CSIRO project of the Bureau of International Co-operation of Chinese Academy of Sciences
WOS IDWOS:000448751800079
PublisherAMER CHEMICAL SOC
Citation statistics
Cited Times:1[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.ipe.ac.cn/handle/122111/26464
Collection中国科学院过程工程研究所
Corresponding AuthorYang, Zai-xing; Han, Ning; Ho, Johnny C.
Affiliation1.Shandong Univ, Ctr Nanoelect, Jinan 250100, Shandong, Peoples R China
2.Shandong Univ, Sch Microelect, Jinan 250100, Shandong, Peoples R China
3.Shandong Univ, Shenzhen Res Inst, Shenzhen 518057, Peoples R China
4.City Univ Hong Kong, Dept Mat Sci & Engn, 83 Tat Chee Ave, Kowloon, Hong Kong, Peoples R China
5.City Univ Hong Kong, Shenzhen Res Inst, Shenzhen 518057, Peoples R China
6.Nanjing Univ, Key Lab Modern Acoust, MOE,Natl Lab Solid State Microstruct, Inst Acoust,Collaborat Innovat Ctr Adv Microstruc, Nanjing 210093, Jiangsu, Peoples R China
7.Chinese Acad Sci, State Key Lab Multiphase Complex Syst, Inst Proc Engn, Beijing 100190, Peoples R China
Recommended Citation
GB/T 7714
Sun, Jiamin,Yin, Yanxue,Han, Mingming,et al. Nonpolar-Oriented Wurtzite InP Nanowires with Electron Mobility Approaching the Theoretical Limit[J]. ACS NANO,2018,12(10):10410-10418.
APA Sun, Jiamin.,Yin, Yanxue.,Han, Mingming.,Yang, Zai-xing.,Lan, Changyong.,...&Ho, Johnny C..(2018).Nonpolar-Oriented Wurtzite InP Nanowires with Electron Mobility Approaching the Theoretical Limit.ACS NANO,12(10),10410-10418.
MLA Sun, Jiamin,et al."Nonpolar-Oriented Wurtzite InP Nanowires with Electron Mobility Approaching the Theoretical Limit".ACS NANO 12.10(2018):10410-10418.
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