CAS OpenIR
Ultra-fast photodetectors based on high-mobility indium gallium antimonide nanowires
Li, Dapan1,2; Lan, Changyong1,3; Manikandan, Arumugam4; Yip, Senpo1,2,5; Zhou, Ziyao1,2; Liang, Xiaoguang1,2; Shu, Lei1,2; Chueh, Yu-Lun4; Han, Ning6; Ho, Johnny C.1,2,5
2019-04-10
Source PublicationNATURE COMMUNICATIONS
ISSN2041-1723
Volume10Pages:10
Abstract

Because of tunable bandgap and high carrier mobility, ternary III-V nanowires (NWs) have demonstrated enormous potential for advanced applications. However, the synthesis of large- scale and highly-crystalline InxGa1-xSb NWs is still a challenge. Here, we achieve high-density and crystalline stoichiometric InxGa1-xSb (0.09 < x < 0.28) NWs on amorphous substrates with the uniform phase-purity and <110 >-orientation via chemical vapor deposition. The asprepared NWs show excellent electrical and optoelectronic characteristics, including the high hole mobility (i.e. 463 cm(2)V(-1)s(-1) for In0.09Ga0.91Sb NWs) as well as broadband and ultrafast photoresponse over the visible and infrared optical communication region (1550 nm). Specifically, the In0.28Ga0.72Sb NW device yields efficient rise and decay times down to 38 and 53 mu s, respectively, along with the responsivity of 6000 A W-1 and external quantum efficiency of 4.8 x 10(6) % towards 1550 nm regime. High-performance NW parallel-arrayed devices can also be fabricated to illustrate their large-scale device integrability for next-generation, ultrafast, high-responsivity and broadband photodetectors.

DOI10.1038/s41467-019-09606-y
Language英语
WOS KeywordInsb Nanowires ; Growth ; Transport
Funding ProjectGeneral Research Fund[CityU 11204614] ; Research Grants Council of Hong Kong SAR, China[T42-103/16-N] ; National Natural Science Foundation of China[51672229] ; National Natural Science Foundation of China[61605024] ; Science Technology and Innovation Committee of Shenzhen Municipality[JCYJ20170818095520778] ; Shenzhen Research Institute, City University of Hong Kong
WOS Research AreaScience & Technology - Other Topics
WOS SubjectMultidisciplinary Sciences
Funding OrganizationGeneral Research Fund ; Research Grants Council of Hong Kong SAR, China ; National Natural Science Foundation of China ; Science Technology and Innovation Committee of Shenzhen Municipality ; Shenzhen Research Institute, City University of Hong Kong
WOS IDWOS:000463984400013
PublisherNATURE PUBLISHING GROUP
Citation statistics
Document Type期刊论文
Identifierhttp://ir.ipe.ac.cn/handle/122111/28244
Collection中国科学院过程工程研究所
Corresponding AuthorHan, Ning; Ho, Johnny C.
Affiliation1.City Univ Hong Kong, Dept Mat Sci & Engn, Kowloon, Hong Kong 999077, Peoples R China
2.City Univ Hong Kong, Shenzhen Res Inst, Shenzhen 518057, Peoples R China
3.Univ Elect Sci & Technol China, Sch Optoelect Sci & Engn, Chengdu 610054, Peoples R China
4.Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan
5.City Univ Hong Kong, State Key Lab Terahertz & Millimeter Waves, Kowloon, Hong Kong 999077, Peoples R China
6.Chinese Acad Sci, Inst Proc Engn, State Key Lab Multiphase Complex Syst, Beijing 100190, Peoples R China
Recommended Citation
GB/T 7714
Li, Dapan,Lan, Changyong,Manikandan, Arumugam,et al. Ultra-fast photodetectors based on high-mobility indium gallium antimonide nanowires[J]. NATURE COMMUNICATIONS,2019,10:10.
APA Li, Dapan.,Lan, Changyong.,Manikandan, Arumugam.,Yip, Senpo.,Zhou, Ziyao.,...&Ho, Johnny C..(2019).Ultra-fast photodetectors based on high-mobility indium gallium antimonide nanowires.NATURE COMMUNICATIONS,10,10.
MLA Li, Dapan,et al."Ultra-fast photodetectors based on high-mobility indium gallium antimonide nanowires".NATURE COMMUNICATIONS 10(2019):10.
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