CAS OpenIR
Comprehensive characterization on Ga (In)-bearing dust generated from semiconductor industry for effective recovery of critical metals
Fang, Sheng1,2; Tao, Tianyi1; Cao, Hongbin1; He, Mingming1,2; Zeng, Xianlai3; Ning, Pengge1; Zhao, He1; Wu, Mingtao1,2; Zhang, Yi1; Sun, Zhi1,2
2019-04-15
Source PublicationWASTE MANAGEMENT
ISSN0956-053X
Volume89Pages:212-223
AbstractGallium (indium)-bearing dust generated from semiconductor industry is an important secondary resource for critical metal recycling. However, the diverse and distinct physicochemical natures of such waste material have made its recycling less effective, e.g. low extraction rate and complex treatment procedures. This research is devoted to gaining in-depth knowledge of the physical and chemical properties of such waste, including the chemical composition, physical phases, particle size distribution and chemical-thermal properties with a series of technologies. As a consequence, the occurrence and distribution of GaN and metallic indium phases are found to be crucial to efficient metal recycling. The thermal-chemical behavior shows that continuous oxidation occurred in the air atmosphere, indicating that heat-treatment followed by acid leaching is feasible to improve their recycling efficiencies. This process is able to leach 80.35% of gallium and 95.78% of indium with one-step operation. Furthermore, different treatment strategies for the waste material are preliminarily evaluated and discussed for the aim of metal recovery. The results show that gallium can be selectively recycled with recycling rate of 89.59% using alkaline leaching. With this research, the understanding on the recyclability of different metals and possibilities of selective recovery can be improved. It provides guidelines during the stage of decision-making for critical metal recycling in order to achieve efficient resource circulation. (C) 2019 Elsevier Ltd. All rights reserved.
KeywordMetal organic chemical vapor deposition dust Characterization Metals recycling Process design Gallium/indium
DOI10.1016/j.wasman.2019.04.011
Language英语
WOS KeywordPHOTOCATALYTIC ACTIVITY ; ELECTRONIC WASTE ; POWER DEVICE ; LED INDUSTRY ; GALLIUM ; MICROSPHERES ; TEMPERATURE ; CHALLENGES ; MANAGEMENT ; NANOWIRES
Funding ProjectNational Key Research and Development Program of China[2017YFB0403300/2017YFB043305] ; National Natural Science Foundation of China[51425405] ; National Natural Science Foundation of China[51874269] ; Key Program of Chinese Academy of Science[KFZD-SW-315]
WOS Research AreaEngineering ; Environmental Sciences & Ecology
WOS SubjectEngineering, Environmental ; Environmental Sciences
Funding OrganizationNational Key Research and Development Program of China ; National Natural Science Foundation of China ; Key Program of Chinese Academy of Science
WOS IDWOS:000470943800021
PublisherPERGAMON-ELSEVIER SCIENCE LTD
Citation statistics
Cited Times:2[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.ipe.ac.cn/handle/122111/30039
Collection中国科学院过程工程研究所
Corresponding AuthorSun, Zhi
Affiliation1.Chinese Acad Sci, Beijing Engn Res Ctr Proc Pollut Control, Natl Engn Lab Hydromet Cleaner Prod & Technol, Inst Proc Engn, 1 Beierjie, Beijing 100190, Peoples R China
2.Univ Chinese Acad Sci, Beijing 100190, Peoples R China
3.Tsinghua Univ, Sch Environm, Beijing 100084, Peoples R China
Recommended Citation
GB/T 7714
Fang, Sheng,Tao, Tianyi,Cao, Hongbin,et al. Comprehensive characterization on Ga (In)-bearing dust generated from semiconductor industry for effective recovery of critical metals[J]. WASTE MANAGEMENT,2019,89:212-223.
APA Fang, Sheng.,Tao, Tianyi.,Cao, Hongbin.,He, Mingming.,Zeng, Xianlai.,...&Sun, Zhi.(2019).Comprehensive characterization on Ga (In)-bearing dust generated from semiconductor industry for effective recovery of critical metals.WASTE MANAGEMENT,89,212-223.
MLA Fang, Sheng,et al."Comprehensive characterization on Ga (In)-bearing dust generated from semiconductor industry for effective recovery of critical metals".WASTE MANAGEMENT 89(2019):212-223.
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