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Primary Nucleation-Dominated Chemical Vapor Deposition Growth for Uniform Graphene Monolayers on Dielectric Substrate
Wang, Huaping1,2; Xue, Xudong; Jiang, Qianqing1,2; Wang, Yanlei4; Geng, Dechao1,2; Cai, Le1,2; Wang, Liping3; Xu, Zhiping5,6; Yu, Gui1,2
2019-07-17
Source PublicationJOURNAL OF THE AMERICAN CHEMICAL SOCIETY
ISSN0002-7863
Volume141Issue:28Pages:11004-11008
AbstractDirect chemical vapor deposition growth of high quality graphene on dielectric substrates holds great promise for practical applications in electronics and optoelectronics. However, graphene growth on dielectrics always suffers from the issues of inhomogeneity and/or poor quality. Here, we first reveal that a novel precursor-modification strategy can successfully suppress the secondary nucleation of graphene to evolve ultrauniform graphene monolayer film on dielectric substrates. A mechanistic study indicates that the hydroxylation of silica substrate weakens the binding between graphene edges and substrate, thus realizing the primary nucleation-dominated growth. Field-effect transistors based on the graphene films show exceptional electrical performance with the charge carrier mobility up to 3800 cm(2) V-1 s(-1) in air, which is much higher than those reported results of graphene films grown on dielectrics.
DOI10.1021/jacs.9b05705
Language英语
WOS KeywordSINGLE-CRYSTAL GRAPHENE ; WALLED CARBON NANOTUBES ; HIGH-QUALITY GRAPHENE ; LARGE-AREA ; LAYER GRAPHENE ; FILMS ; OXYGEN ; NANOGRAPHENE ; GRAINS
Funding ProjectNational Natural Science Foundation of China[61390502] ; Strategic Priority Research Program of the Chinese Academy of Sciences[XDB 30000000] ; Strategic Priority Research Program of the Chinese Academy of Sciences[XDB 12030100]
WOS Research AreaChemistry
WOS SubjectChemistry, Multidisciplinary
Funding OrganizationNational Natural Science Foundation of China ; Strategic Priority Research Program of the Chinese Academy of Sciences
WOS IDWOS:000476684700015
PublisherAMER CHEMICAL SOC
Citation statistics
Document Type期刊论文
Identifierhttp://ir.ipe.ac.cn/handle/122111/30344
Collection中国科学院过程工程研究所
Corresponding AuthorXu, Zhiping; Yu, Gui
Affiliation1.Chinese Acad Sci, Beijing Natl Lab Mol Sci, CAS Res Educ Ctr Excellence Mol Sci, Inst Chem, Beijing 100190, Peoples R China
2.Univ Chinese Acad Sci, Sch Chem Sci, Beijing 100049, Peoples R China
3.Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing 100083, Peoples R China
4.Chinese Acad Sci, Beijing Key Lab Ion Liquids Clean Proc, Inst Proc Engn, Beijing 100190, Peoples R China
5.Tsinghua Univ, Dept Engn Mech, Appl Mech Lab, Beijing 100084, Peoples R China
6.Tsinghua Univ, Ctr Nano & Micro Mech, Beijing 100084, Peoples R China
Recommended Citation
GB/T 7714
Wang, Huaping,Xue, Xudong,Jiang, Qianqing,et al. Primary Nucleation-Dominated Chemical Vapor Deposition Growth for Uniform Graphene Monolayers on Dielectric Substrate[J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,2019,141(28):11004-11008.
APA Wang, Huaping.,Xue, Xudong.,Jiang, Qianqing.,Wang, Yanlei.,Geng, Dechao.,...&Yu, Gui.(2019).Primary Nucleation-Dominated Chemical Vapor Deposition Growth for Uniform Graphene Monolayers on Dielectric Substrate.JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,141(28),11004-11008.
MLA Wang, Huaping,et al."Primary Nucleation-Dominated Chemical Vapor Deposition Growth for Uniform Graphene Monolayers on Dielectric Substrate".JOURNAL OF THE AMERICAN CHEMICAL SOCIETY 141.28(2019):11004-11008.
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