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| Primary Nucleation-Dominated Chemical Vapor Deposition Growth for Uniform Graphene Monolayers on Dielectric Substrate | |
| Wang, Huaping1,2; Xue, Xudong; Jiang, Qianqing1,2; Wang, Yanlei4; Geng, Dechao1,2; Cai, Le1,2; Wang, Liping3; Xu, Zhiping5,6; Yu, Gui1,2 | |
| 2019-07-17 | |
| Source Publication | JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
 |
| ISSN | 0002-7863 |
| Volume | 141Issue:28Pages:11004-11008 |
| Abstract | Direct chemical vapor deposition growth of high quality graphene on dielectric substrates holds great promise for practical applications in electronics and optoelectronics. However, graphene growth on dielectrics always suffers from the issues of inhomogeneity and/or poor quality. Here, we first reveal that a novel precursor-modification strategy can successfully suppress the secondary nucleation of graphene to evolve ultrauniform graphene monolayer film on dielectric substrates. A mechanistic study indicates that the hydroxylation of silica substrate weakens the binding between graphene edges and substrate, thus realizing the primary nucleation-dominated growth. Field-effect transistors based on the graphene films show exceptional electrical performance with the charge carrier mobility up to 3800 cm(2) V-1 s(-1) in air, which is much higher than those reported results of graphene films grown on dielectrics. |
| DOI | 10.1021/jacs.9b05705 |
| Language | 英语 |
| WOS Keyword | SINGLE-CRYSTAL GRAPHENE ; WALLED CARBON NANOTUBES ; HIGH-QUALITY GRAPHENE ; LARGE-AREA ; LAYER GRAPHENE ; FILMS ; OXYGEN ; NANOGRAPHENE ; GRAINS |
| Funding Project | National Natural Science Foundation of China[61390502] ; Strategic Priority Research Program of the Chinese Academy of Sciences[XDB 30000000] ; Strategic Priority Research Program of the Chinese Academy of Sciences[XDB 12030100] |
| WOS Research Area | Chemistry |
| WOS Subject | Chemistry, Multidisciplinary |
| Funding Organization | National Natural Science Foundation of China ; Strategic Priority Research Program of the Chinese Academy of Sciences |
| WOS ID | WOS:000476684700015 |
| Publisher | AMER CHEMICAL SOC |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.ipe.ac.cn/handle/122111/30344 |
| Collection | 中国科学院过程工程研究所 |
| Corresponding Author | Xu, Zhiping; Yu, Gui |
| Affiliation | 1.Chinese Acad Sci, Beijing Natl Lab Mol Sci, CAS Res Educ Ctr Excellence Mol Sci, Inst Chem, Beijing 100190, Peoples R China 2.Univ Chinese Acad Sci, Sch Chem Sci, Beijing 100049, Peoples R China 3.Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing 100083, Peoples R China 4.Chinese Acad Sci, Beijing Key Lab Ion Liquids Clean Proc, Inst Proc Engn, Beijing 100190, Peoples R China 5.Tsinghua Univ, Dept Engn Mech, Appl Mech Lab, Beijing 100084, Peoples R China 6.Tsinghua Univ, Ctr Nano & Micro Mech, Beijing 100084, Peoples R China |
| Recommended Citation GB/T 7714 | Wang, Huaping,Xue, Xudong,Jiang, Qianqing,et al. Primary Nucleation-Dominated Chemical Vapor Deposition Growth for Uniform Graphene Monolayers on Dielectric Substrate[J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,2019,141(28):11004-11008. |
| APA | Wang, Huaping.,Xue, Xudong.,Jiang, Qianqing.,Wang, Yanlei.,Geng, Dechao.,...&Yu, Gui.(2019).Primary Nucleation-Dominated Chemical Vapor Deposition Growth for Uniform Graphene Monolayers on Dielectric Substrate.JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,141(28),11004-11008. |
| MLA | Wang, Huaping,et al."Primary Nucleation-Dominated Chemical Vapor Deposition Growth for Uniform Graphene Monolayers on Dielectric Substrate".JOURNAL OF THE AMERICAN CHEMICAL SOCIETY 141.28(2019):11004-11008. |
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