YANG Yan; ZHANG Weigang
Source Publicationjournalofcentralsouthuniversityoftechnology
AbstractChemical vapor deposition (CVD) of SiC from methyltrichlorosilane (NITS) was studied at two different molar ratios of H-2 to MTS (n(H-2)/n(MTS)). The total pressure was kept as 100 kPa and the temperature was varied from 850 to 1100 degrees C at a total residence time of 1 s. Steady-state deposition rates as functions of reactor length and of temperature, investigated at different n(H-2)/n(MTS) values, show that hydrogen exhibits strongly influences on the deposition rate. Especially, the deposition of Si co-deposit can be obtained in broader substrate length and at higher temperatures with increasing hydrogen partial pressure. Influence of hydrogen on the deposition process was also studied using gas phase composition and deposit composition analysis at various n(H-2)/n(MTS). SEM micrographs directly show the variation of surface morphologies at various n(H-2)/n(MTS). It can be found that the crystal grain of the deposit at 1100 degrees C is better developed and the crystallization is also improved with increasing n(H-2)/n(MTS).
Funding Project[Chinese Academy of Sciences]
Document Type期刊论文
First Author Affilication中国科学院过程工程研究所
Recommended Citation
GB/T 7714
YANG Yan,ZHANG Weigang. chemicalvapordepositionofsicatdifferentmolarratiosofhydrogentomethyltrichlorosilane[J]. journalofcentralsouthuniversityoftechnology,2009,16(5):730.
APA YANG Yan,&ZHANG Weigang.(2009).chemicalvapordepositionofsicatdifferentmolarratiosofhydrogentomethyltrichlorosilane.journalofcentralsouthuniversityoftechnology,16(5),730.
MLA YANG Yan,et al."chemicalvapordepositionofsicatdifferentmolarratiosofhydrogentomethyltrichlorosilane".journalofcentralsouthuniversityoftechnology 16.5(2009):730.
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