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铌表面固体粉末包埋渗硅研究
李明1; 宋力昕1; 乐军1; 宋学平2; 郭占成2
2005
Source Publication无机材料学报
ISSN1000-324X
Volume020Issue:003Pages:764
Abstract采用固体粉末包埋渗硅工艺在铌表面制备了二硅化铌涂层,研究了渗硅过程中Si沉积的反应机理和二硅化铌涂层的结构.结果表明:涂层由单相的二硅化铌组成;Si的输运和沉积主要依靠硅的低氟化物SiF2完成.
Language英语
Document Type期刊论文
Identifierhttp://ir.ipe.ac.cn/handle/122111/32889
Collection中国科学院过程工程研究所
Affiliation1.中国科学院上海硅酸盐研究所
2.中国科学院过程工程研究所
Recommended Citation
GB/T 7714
李明,宋力昕,乐军,等. 铌表面固体粉末包埋渗硅研究[J]. 无机材料学报,2005,020(003):764.
APA 李明,宋力昕,乐军,宋学平,&郭占成.(2005).铌表面固体粉末包埋渗硅研究.无机材料学报,020(003),764.
MLA 李明,et al."铌表面固体粉末包埋渗硅研究".无机材料学报 020.003(2005):764.
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