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Enhancing impurities removal from Si by controlling crystal growth in directional solidification refining with Al-Si alloy
Qian, Guoyu1; Sun, Liyuan1; Chen, Hang1; Wang, Zhi1; Wei, Kuixian2; Ma, Wenhui2
2020-04-15
Source PublicationJOURNAL OF ALLOYS AND COMPOUNDS
ISSN0925-8388
Volume820Pages:10
AbstractIn this paper, the principle of "plain materials" was attempted to advancing silicon (Si) purity, i.e., controlling solid-liquid interface and Si crystal growth pattern to enhance impurities removal from Si in directional solidification refining with Al-Si alloy. The relationship between Si crystal growth and impurity removal was established, and it was found that the removal ratio of metal impurities (less than 95% to more than 99%) gradually decreased with the order evolution of Si crystal from bulk Si, porous Si, acicular Si to Al-Si eutectic alloy. More than 99.5% of metallic impurities could be removed in the case of bulk silicon. However, the removal of boron (B) and phosphorus (P) showed the opposite trend. According to the principle of constitutional supercooling, the crystal Si growth and interface morphology were evaluated based on the conservation of mass of silicon atoms at the solidification interface, which was also used to explain the mechanism of impurities removal. Control of silicon crystal growth was achieved by changing the temperature gradient (lowering rate), Si alloy composition (Si content) and the heat transfer mode of solid-liquid interface that was expressed in terms of the effective heat transfer area ratio between wall and bottom of crucible (L-A). A more stable and flat liquid-solid interface and 45% bulk Si was obtained at a lowering rate of 0.05 mm/min when the value of L-A was 0.1, which can greatly enhance the removal of impurities. (C) 2019 Elsevier B.V. All rights reserved.
KeywordHigh purity silicon Directional solidification Al-Si solvent refining Si crystal growth Impurity removal
DOI10.1016/j.jallcom.2019.153300
Language英语
WOS KeywordMETALLURGICAL-GRADE SILICON ; BORON REMOVAL ; PURIFICATION ; SEPARATION ; MELT ; THERMODYNAMICS ; PHOSPHORUS ; CALCIUM ; GETTER ; FIELD
Funding ProjectNational Key R&D Program of China[2018YFC1901801] ; National Natural Science Foundation of China[U1702251] ; National Natural Science Foundation of China[51604256] ; Beijing Municipal Natural Science Foundation[2192055]
WOS Research AreaChemistry ; Materials Science ; Metallurgy & Metallurgical Engineering
WOS SubjectChemistry, Physical ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
Funding OrganizationNational Key R&D Program of China ; National Natural Science Foundation of China ; Beijing Municipal Natural Science Foundation
WOS IDWOS:000507854700051
PublisherELSEVIER SCIENCE SA
Citation statistics
Document Type期刊论文
Identifierhttp://ir.ipe.ac.cn/handle/122111/38694
Collection中国科学院过程工程研究所
Corresponding AuthorWang, Zhi
Affiliation1.Chinese Acad Sci, Inst Proc Engn, Key Lab Green Proc & Engn, Natl Engn Lab Hydromet Cleaner Prod Technol, Beijing 100190, Peoples R China
2.Kunming Univ Sci & Technol, Fac Met & Energy Engn, Kunming 650093, Yunnan, Peoples R China
Recommended Citation
GB/T 7714
Qian, Guoyu,Sun, Liyuan,Chen, Hang,et al. Enhancing impurities removal from Si by controlling crystal growth in directional solidification refining with Al-Si alloy[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2020,820:10.
APA Qian, Guoyu,Sun, Liyuan,Chen, Hang,Wang, Zhi,Wei, Kuixian,&Ma, Wenhui.(2020).Enhancing impurities removal from Si by controlling crystal growth in directional solidification refining with Al-Si alloy.JOURNAL OF ALLOYS AND COMPOUNDS,820,10.
MLA Qian, Guoyu,et al."Enhancing impurities removal from Si by controlling crystal growth in directional solidification refining with Al-Si alloy".JOURNAL OF ALLOYS AND COMPOUNDS 820(2020):10.
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