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| Enhancing impurities removal from Si by controlling crystal growth in directional solidification refining with Al-Si alloy | |
| Qian, Guoyu1; Sun, Liyuan1; Chen, Hang1; Wang, Zhi1; Wei, Kuixian2; Ma, Wenhui2 | |
| 2020-04-15 | |
| Source Publication | JOURNAL OF ALLOYS AND COMPOUNDS
 |
| ISSN | 0925-8388 |
| Volume | 820Pages:10 |
| Abstract | In this paper, the principle of "plain materials" was attempted to advancing silicon (Si) purity, i.e., controlling solid-liquid interface and Si crystal growth pattern to enhance impurities removal from Si in directional solidification refining with Al-Si alloy. The relationship between Si crystal growth and impurity removal was established, and it was found that the removal ratio of metal impurities (less than 95% to more than 99%) gradually decreased with the order evolution of Si crystal from bulk Si, porous Si, acicular Si to Al-Si eutectic alloy. More than 99.5% of metallic impurities could be removed in the case of bulk silicon. However, the removal of boron (B) and phosphorus (P) showed the opposite trend. According to the principle of constitutional supercooling, the crystal Si growth and interface morphology were evaluated based on the conservation of mass of silicon atoms at the solidification interface, which was also used to explain the mechanism of impurities removal. Control of silicon crystal growth was achieved by changing the temperature gradient (lowering rate), Si alloy composition (Si content) and the heat transfer mode of solid-liquid interface that was expressed in terms of the effective heat transfer area ratio between wall and bottom of crucible (L-A). A more stable and flat liquid-solid interface and 45% bulk Si was obtained at a lowering rate of 0.05 mm/min when the value of L-A was 0.1, which can greatly enhance the removal of impurities. (C) 2019 Elsevier B.V. All rights reserved. |
| Keyword | High purity silicon Directional solidification Al-Si solvent refining Si crystal growth Impurity removal |
| DOI | 10.1016/j.jallcom.2019.153300 |
| Language | 英语 |
| WOS Keyword | METALLURGICAL-GRADE SILICON ; BORON REMOVAL ; PURIFICATION ; SEPARATION ; MELT ; THERMODYNAMICS ; PHOSPHORUS ; CALCIUM ; GETTER ; FIELD |
| Funding Project | National Key R&D Program of China[2018YFC1901801] ; National Natural Science Foundation of China[U1702251] ; National Natural Science Foundation of China[51604256] ; Beijing Municipal Natural Science Foundation[2192055] |
| WOS Research Area | Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering |
| WOS Subject | Chemistry, Physical ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
| Funding Organization | National Key R&D Program of China ; National Natural Science Foundation of China ; Beijing Municipal Natural Science Foundation |
| WOS ID | WOS:000507854700051 |
| Publisher | ELSEVIER SCIENCE SA |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.ipe.ac.cn/handle/122111/38694 |
| Collection | 中国科学院过程工程研究所 |
| Corresponding Author | Wang, Zhi |
| Affiliation | 1.Chinese Acad Sci, Inst Proc Engn, Key Lab Green Proc & Engn, Natl Engn Lab Hydromet Cleaner Prod Technol, Beijing 100190, Peoples R China 2.Kunming Univ Sci & Technol, Fac Met & Energy Engn, Kunming 650093, Yunnan, Peoples R China |
| Recommended Citation GB/T 7714 | Qian, Guoyu,Sun, Liyuan,Chen, Hang,et al. Enhancing impurities removal from Si by controlling crystal growth in directional solidification refining with Al-Si alloy[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2020,820:10. |
| APA | Qian, Guoyu,Sun, Liyuan,Chen, Hang,Wang, Zhi,Wei, Kuixian,&Ma, Wenhui.(2020).Enhancing impurities removal from Si by controlling crystal growth in directional solidification refining with Al-Si alloy.JOURNAL OF ALLOYS AND COMPOUNDS,820,10. |
| MLA | Qian, Guoyu,et al."Enhancing impurities removal from Si by controlling crystal growth in directional solidification refining with Al-Si alloy".JOURNAL OF ALLOYS AND COMPOUNDS 820(2020):10. |
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