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| Improving the signal resolution of semiconductor gas sensors to high-concentration gases | |
| Zhou, Xinyuan1,2; Yang, Liping1; Bian, Yuzhi1,2; Wang, Ying1; Han, Ning1,2,3; Chen, Yunfa1,2,3 | |
| 2019-12-01 | |
| Source Publication | SOLID-STATE ELECTRONICS
 |
| ISSN | 0038-1101 |
| Volume | 162Pages:7 |
| Abstract | Detecting high-concentration gases is challenging by metal oxide semiconductor (MOX) gas sensors, because the voltage signal would become saturated. In order to solve this problem, the zooming p + n field-effect transistors (FETs) circuit has been designed, combining an n-type enhancement-mode FET (EMFET) and a p-type depletion-mode FET (DMFET). This designed zooming p + n FETs can endow MOX gas sensors with the high signal resolution of similar to 3.0 V/decade to the 100-2000 ppm (part per million) acetone gas, triple that of MOX gas sensors without FETs (similar to 0.8 V/decade). Meanwhile, this zooming technology is also suitable for detecting other gases at high-concentration, such as 1%-20% LEL (lower explosion limit) methane. The principle of zooming p + n FETs is that with increasing the gas concentration, the suppressing role of the EMFET is firstly induced leading to a reduced signal resolution to the low-concentration target gas; then its suppressing effect becomes saturated and the DMFET starts to switch from ON state to OFF state in the high-concentration target gas, resulting in an amplifying effect herein and thus an enhanced signal resolution. This circuit is promising for the high-concentration gas detection as well as for the multi-functional gas detector design. |
| Keyword | Metal oxide gas sensor Field-effect transistor High-concentration Signal resolution |
| DOI | 10.1016/j.sse.2019.107648 |
| Language | 英语 |
| WOS Keyword | ACETONE ; EXPOSURE ; ETHANOL ; OXYGEN |
| Funding Project | National Key R&D Program of China[2016YFC0207100] ; National Natural Science Foundation of China[51602314] ; Guangdong Innovative and Entrepreneurial Research Team Program[2014ZT05C146] |
| WOS Research Area | Engineering ; Physics |
| WOS Subject | Engineering, Electrical & Electronic ; Physics, Applied ; Physics, Condensed Matter |
| Funding Organization | National Key R&D Program of China ; National Natural Science Foundation of China ; Guangdong Innovative and Entrepreneurial Research Team Program |
| WOS ID | WOS:000492851200005 |
| Publisher | PERGAMON-ELSEVIER SCIENCE LTD |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.ipe.ac.cn/handle/122111/39104 |
| Collection | 中国科学院过程工程研究所 |
| Corresponding Author | Han, Ning; Chen, Yunfa |
| Affiliation | 1.Chinese Acad Sci, Inst Proc Engn, State Key Lab Multiphase Complex Syst, Beijing 100190, Peoples R China 2.Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, 19A Yuquan Rd, Beijing 100049, Peoples R China 3.Chinese Acad Sci, Ctr Excellence Reg Atmospher Environm, Inst Urban Environm, Xiamen 361021, Fujian, Peoples R China |
| Recommended Citation GB/T 7714 | Zhou, Xinyuan,Yang, Liping,Bian, Yuzhi,et al. Improving the signal resolution of semiconductor gas sensors to high-concentration gases[J]. SOLID-STATE ELECTRONICS,2019,162:7. |
| APA | Zhou, Xinyuan,Yang, Liping,Bian, Yuzhi,Wang, Ying,Han, Ning,&Chen, Yunfa.(2019).Improving the signal resolution of semiconductor gas sensors to high-concentration gases.SOLID-STATE ELECTRONICS,162,7. |
| MLA | Zhou, Xinyuan,et al."Improving the signal resolution of semiconductor gas sensors to high-concentration gases".SOLID-STATE ELECTRONICS 162(2019):7. |
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