Knowledge Management System Of Institute of process engineering,CAS
| Wetting behavior and reaction mechanism of molten Si in contact with silica substrate | |
| Wang, Qinghu1; He, Gang2; Deng, Shuxiang2; Liu, Jun1; Li, Xiaoyu3; Li, Jianqiang3; Li, Yawei1; Li, Jiangtao2 | |
| 2019-12-01 | |
| Source Publication | CERAMICS INTERNATIONAL
 |
| ISSN | 0272-8842 |
| Volume | 45Issue:17Pages:21365-21372 |
| Abstract | The photovoltaic silicon ingot is currently grown in silica (SiO2) crucible. However, adhesion between Si ingot and SiO2 crucible occurred frequently, leading to cracking in Si ingot. To solve these problems, it is important to understand the Si/SiO2 interfacial wetting behavior and reaction mechanism at high temperature. In this paper, the sessile drop technology and microstructural analysis method were used to study the Si/SiO2 interfacial wetting behavior and reaction mechanism at high temperature. The results show that the contact angle of Si drop on SiO2 substrate is 83.5 +/- 2 degrees. The interfacial reaction occurs between Si melt and SiO2 substrate at high temperature, causing uneven surface of substrate with many grooves. The Si melt fills grooves at high temperature and expands during solidification, which results in interlock structure and adhesion at Si/SiO(2 )interface. Finally, adhesion and cracking phenomena are interpreted by analytical models. |
| Keyword | Wetting behavior Reaction mechanism Multicrystalline silicon SiO2 substrate |
| DOI | 10.1016/j.ceramint.2019.07.123 |
| Language | 英语 |
| WOS Keyword | SESSILE DROP ; CRISTOBALITE CRYSTALLIZATION ; WETTABILITY ; EVAPORATION ; INTERFACE ; ALUMINA ; CARBON ; STEEL ; MGO |
| Funding Project | National Natural Science Foundation of China[51572268] ; National Natural Science Foundation of China[51702240] ; National Natural Science Foundation of China[51702331] ; National Natural Science Foundation of China[51674232] ; National Key Research and Development Program of China[2017YFB0310303] |
| WOS Research Area | Materials Science |
| WOS Subject | Materials Science, Ceramics |
| Funding Organization | National Natural Science Foundation of China ; National Key Research and Development Program of China |
| WOS ID | WOS:000493212500038 |
| Publisher | ELSEVIER SCI LTD |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.ipe.ac.cn/handle/122111/39124 |
| Collection | 中国科学院过程工程研究所 |
| Corresponding Author | Wang, Qinghu; He, Gang |
| Affiliation | 1.Wuhan Univ Sci & Technol, State Key Lab Refractories & Met, Natl Prov Joint Engn Res Ctr High Temp Mat & Lini, Wuhan 430081, Hubei, Peoples R China 2.Chinese Acad Sci, Tech Inst Phys & Chem, Beijing 100190, Peoples R China 3.Chinese Acad Sci, Natl Engn Lab Hydrometallurg Cleaner Prod Technol, CAS Key Lab Green Proc & Engn, Inst Proc Engn, Beijing 100190, Peoples R China |
| Recommended Citation GB/T 7714 | Wang, Qinghu,He, Gang,Deng, Shuxiang,et al. Wetting behavior and reaction mechanism of molten Si in contact with silica substrate[J]. CERAMICS INTERNATIONAL,2019,45(17):21365-21372. |
| APA | Wang, Qinghu.,He, Gang.,Deng, Shuxiang.,Liu, Jun.,Li, Xiaoyu.,...&Li, Jiangtao.(2019).Wetting behavior and reaction mechanism of molten Si in contact with silica substrate.CERAMICS INTERNATIONAL,45(17),21365-21372. |
| MLA | Wang, Qinghu,et al."Wetting behavior and reaction mechanism of molten Si in contact with silica substrate".CERAMICS INTERNATIONAL 45.17(2019):21365-21372. |
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