CAS OpenIR
Ambipolar transport in Ni-catalyzed InGaAs nanowire field-effect transistors for near-infrared photodetection
Guo,Yanan1; Liu,Dong1,2; Miao,Chengcheng1,2; Sun,Jiamin1,2; Pang,Zhiyong1; Wang,Peng3; Xu,Mingsheng1; Han,Ning4; Yang,Zai-Xing1,2
2021-01-13
Source PublicationNanotechnology
ISSN0957-4484
Volume32Issue:14
AbstractAbstract Weak n-type characteristics or poor p-type characteristics are limiting the applications of binary semiconductors based on ambipolar field-effect transistors (FETs). In this work, a ternary alloy of In0.2Ga0.8As nanowires (NWs) is successfully prepared using a Ni catalyst during a typical solid-source chemical-vapor-deposition process to balance the weak n-type conduction behavior in ambipolar GaAs NWFETs and the poor p-type conduction behavior in ambipolar InAs NWFETs. The presence of ambipolar transport, contributed by a native oxide shell and the body defects of the prepared In0.2Ga0.8As NWs, is confirmed by the constructed back-gated NWFETs. As demonstrated by photoluminescence, the bandgap of the prepared In0.2Ga0.8As NWs is 1.28 eV, offering the promise of application in near-infrared (NIR) photodetection. Under 850 nm laser illumination, the fabricated ambipolar NWFETs show extremely low dark currents of 50 pA and 0.5 pA when positive and negative gate voltages are applied, respectively. All the results demonstrate that with careful design of the surface oxide layer and the body defects, NWs are suitable for use in next-generation optoelectronic devices.
Keywordambipolar transport field-effect transistors InGaAs nanowires CMOS-compatible catalyst surface state near-infrared photodetection
DOI10.1088/1361-6528/abd358
Language英语
WOS IDIOP:0957-4484-32-14-abd358
PublisherIOP Publishing
Citation statistics
Document Type期刊论文
Identifierhttp://ir.ipe.ac.cn/handle/122111/41988
Collection中国科学院过程工程研究所
Corresponding AuthorYang,Zai-Xing
Affiliation1.School of Microelectronics, School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, People’s Republic of China
2.State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, People’s Republic of China
3.College of Electronic and Information Engineering, Shandong University of Science and Technology, Qingdao, 266590, People’s Republic of China
4.State Key Laboratory of Multiphase Complex Systems, Institute of Process Engineering, Chinese Academy of Sciences, Beijing, 100190, People’s Republic of China
Recommended Citation
GB/T 7714
Guo,Yanan,Liu,Dong,Miao,Chengcheng,et al. Ambipolar transport in Ni-catalyzed InGaAs nanowire field-effect transistors for near-infrared photodetection[J]. Nanotechnology,2021,32(14).
APA Guo,Yanan.,Liu,Dong.,Miao,Chengcheng.,Sun,Jiamin.,Pang,Zhiyong.,...&Yang,Zai-Xing.(2021).Ambipolar transport in Ni-catalyzed InGaAs nanowire field-effect transistors for near-infrared photodetection.Nanotechnology,32(14).
MLA Guo,Yanan,et al."Ambipolar transport in Ni-catalyzed InGaAs nanowire field-effect transistors for near-infrared photodetection".Nanotechnology 32.14(2021).
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