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| Nonpolar GaAs Nanowires Catalyzed by Cu5As2: Insights into As Layer Epitaxy | |
| Wang, Hang1,2; Wang, Anqi1,3; Wang, Ying4; Yang, Zaixing5,6; Yang, Jun2; Han, Ning1,3; Chen, Yunfa1,3 | |
| 2020-12-08 | |
| Source Publication | ACS OMEGA
 |
| ISSN | 2470-1343 |
| Volume | 5Issue:48Pages:30963-30970 |
| Abstract | Controlled synthesis of GaAs nanowires (NWs) with specific phases and orientations is important and challenging, which determines their electronic performances. Herein, single-crystalline GaAs NWs are successfully synthesized by using complementary metal-oxide semiconductor compatible Cu2O catalysts via chemical vapor deposition at an optimized temperature of 560 degrees C. In contrast to typically Au catalyzed GaAs NWs, the Cu2O catalyzed ones are found to grow along nonpolar orientations of zincblende <110> and <211> and wurtzite <<(1)over bar>100> and <<(2)over bar>110>. The Cu2O catalysts are found to change into orthorhombic Cu5As2 after the NW growth, which is also significantly distinguished from the Au-Ga catalyst alloy in the literature. The Cu5As2 alloy plays the epitaxy role in the nonpolar GaAs NW growth due to the lattice matching with the nonpolar planes of GaAs, which is verified by the atomic stack model. These nonpolar oriented GaAs NWs have minimized stacking faults, promising for the other semiconductor synthesis as well as electronic applications. |
| DOI | 10.1021/acsomega.0c03817 |
| Language | 英语 |
| WOS Keyword | GROWTH ; MECHANISM ; MOBILITY ; ATOMS |
| Funding Project | National Natural Science Foundation of China[51602314] ; National Natural Science Foundation of China[61504151] ; National Key R&D Program of China[2017YFA0305500] ; CAS-CSIRO project of the Bureau of International Co-operation of Chinese Academy of Sciences[122111KYSB20150064] |
| WOS Research Area | Chemistry |
| WOS Subject | Chemistry, Multidisciplinary |
| Funding Organization | National Natural Science Foundation of China ; National Key R&D Program of China ; CAS-CSIRO project of the Bureau of International Co-operation of Chinese Academy of Sciences |
| WOS ID | WOS:000599316200020 |
| Publisher | AMER CHEMICAL SOC |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.ipe.ac.cn/handle/122111/42957 |
| Collection | 中国科学院过程工程研究所 |
| Corresponding Author | Yang, Jun; Han, Ning; Chen, Yunfa |
| Affiliation | 1.Chinese Acad Sci, Inst Proc Engn, State Key Lab Multiphase Complex Syst, Beijing 100190, Peoples R China 2.Xian Univ Architecture & Technol, Sch Met Engn, Xian 710055, Peoples R China 3.Chinese Acad Sci, Ctr Excellence Reg Atmospher Environm, Inst Urban Environm, Xiamen 361021, Peoples R China 4.Beijing Jiaotong Univ, Sch Sci, Dept Phys, Beijing 100044, Peoples R China 5.Shandong Univ, Ctr Nanoelect, Jinan 250100, Peoples R China 6.Shandong Univ, Sch Microelect, Jinan 250100, Peoples R China |
| Recommended Citation GB/T 7714 | Wang, Hang,Wang, Anqi,Wang, Ying,et al. Nonpolar GaAs Nanowires Catalyzed by Cu5As2: Insights into As Layer Epitaxy[J]. ACS OMEGA,2020,5(48):30963-30970. |
| APA | Wang, Hang.,Wang, Anqi.,Wang, Ying.,Yang, Zaixing.,Yang, Jun.,...&Chen, Yunfa.(2020).Nonpolar GaAs Nanowires Catalyzed by Cu5As2: Insights into As Layer Epitaxy.ACS OMEGA,5(48),30963-30970. |
| MLA | Wang, Hang,et al."Nonpolar GaAs Nanowires Catalyzed by Cu5As2: Insights into As Layer Epitaxy".ACS OMEGA 5.48(2020):30963-30970. |
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