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Preparation and Characterization of Sn-doped ZnO Particles with Low Infrared Emissivity | |
Zhao L(赵亮); Zhu YP(朱永平) | |
2012 | |
Source Publication | 过程工程学报
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ISSN | 1009-606X |
Volume | 12.0Issue:003Pages:516 |
Abstract | Sn-doped ZnO particles were successfully synthesized by chemical co-precipitation method. Their morphology, phase, microstructure and infrared emissivity were characterized. The results show that the Sn-doped ZnO particles are of ellipsoid shape, their crystalline structure changed with thermal process temperature, the optimal thermal process temperature and Sn-doped proportion are 1000 ℃ and 15%, respectively, the minimum emissivity values are 0.42, 0.28, 0.46 and 0.48 corresponding to the infrared wavelengths of 0--∞, 3-5, 8-14 and 14-20μm, which indicates that the Sn-doped ZnO particles have the application potential as low infrared emissivity material |
Language | 英语 |
Document Type | 期刊论文 |
Identifier | http://ir.ipe.ac.cn/handle/122111/44952 |
Collection | 中国科学院过程工程研究所 |
Affiliation | 中国科学院过程工程研究所 |
First Author Affilication | 中国科学院过程工程研究所 |
Recommended Citation GB/T 7714 | Zhao L,Zhu YP. Preparation and Characterization of Sn-doped ZnO Particles with Low Infrared Emissivity[J]. 过程工程学报,2012,12.0(003):516. |
APA | 赵亮,&朱永平.(2012).Preparation and Characterization of Sn-doped ZnO Particles with Low Infrared Emissivity.过程工程学报,12.0(003),516. |
MLA | 赵亮,et al."Preparation and Characterization of Sn-doped ZnO Particles with Low Infrared Emissivity".过程工程学报 12.0.003(2012):516. |
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