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< 110 >-growth orientation dependence of Ga2O3 nanowires on Cu3As seeds via vapor-solid-solid mechanism
Wang, Hang1,2; Wang, Anqi2,3; Wang, Ying4; Yang, Zaixing5,6; Yang, Jun1; Han, Ning2,3; Chen, Yunfa2,3
2021-05-25
Source PublicationJOURNAL OF ALLOYS AND COMPOUNDS
ISSN0925-8388
Volume864Pages:7
Abstract

To accurately control semiconductor nanowires' (NW) physical characteristics defining electronic, optical and sensor applications, it is necessary to understand their potential growth mechanism. In this study, the Ga2O3 NW growth orientation is found to be dependent on their Cu3As catalyst structure via vapor-solid-solid (VSS) mechanism. The Ga2O3 NWs are synthesized by vapor transport method at 700 degrees C below the Cu3As alloy eutectic temperature, which forms a solid structure on top of the NWs. The NWs have relatively uniform diameter of 40-60 nm and prefer to grow along <110> direction. Energy-dispersive X-ray spectroscopy (EDS) and high-resolution transmission electron microscope (HRTEM) data provide strong evidence that the harvested Ga2O3 NWs are epitaxially grown from Cu3As-based (cubic and hexagonal) catalyst seeds. And Ga2O3{110} vertical bar Cubic Cu3As {(2)10}, Ga2O3{110} vertical bar Cubic Cu3As {110} and Ga2O3 {110} vertical bar hexagonal Cu3As {110} have relatively low mismatch compared to other interface lattice planes, providing a key insight into the growth process according to the VSS mechanism. The thermodynamics driven composition changes in the growth process are elaborated in detail. (C) 2021 Elsevier B.V. All rights reserved.

KeywordGa2o3 Nanowire Cu3as Vss < 110 > Orientation
DOI10.1016/j.jallcom.2021.158786
Language英语
Funding ProjectNational Natural Science Foundation of China[51602314] ; National Natural Science Foundation of China[61504151] ; National Key Research and Development Program of China[2017YFA0305500] ; CAS-CSIRO project of the Bureau of International Co-operation of Chinese Academy of Sciences[122111KYSB20150064]
WOS Research AreaChemistry ; Materials Science ; Metallurgy & Metallurgical Engineering
WOS SubjectChemistry, Physical ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
Funding OrganizationNational Natural Science Foundation of China ; National Key Research and Development Program of China ; CAS-CSIRO project of the Bureau of International Co-operation of Chinese Academy of Sciences
WOS IDWOS:000624942300074
PublisherELSEVIER SCIENCE SA
Citation statistics
Document Type期刊论文
Identifierhttp://ir.ipe.ac.cn/handle/122111/48023
Collection中国科学院过程工程研究所
Corresponding AuthorYang, Jun; Han, Ning; Chen, Yunfa
Affiliation1.Xian Univ Architecture & Technol, Sch Met Engn, Xian 710055, Peoples R China
2.Chinese Acad Sci, Inst Proc Engn, State Key Lab Multiphase Complex Syst, Beijing 100190, Peoples R China
3.Chinese Acad Sci, Ctr Excellence Reg Atmospher Environm, Inst Urban Environm, Xiamen 361021, Peoples R China
4.Beijing Jiaotong Univ, Sch Sci, Dept Phys, Beijing 100044, Peoples R China
5.Shandong Univ, Ctr Nanoelect, Jinan 250100, Peoples R China
6.Shandong Univ, Sch Microelect, Jinan 250100, Peoples R China
Recommended Citation
GB/T 7714
Wang, Hang,Wang, Anqi,Wang, Ying,et al. < 110 >-growth orientation dependence of Ga2O3 nanowires on Cu3As seeds via vapor-solid-solid mechanism[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2021,864:7.
APA Wang, Hang.,Wang, Anqi.,Wang, Ying.,Yang, Zaixing.,Yang, Jun.,...&Chen, Yunfa.(2021).< 110 >-growth orientation dependence of Ga2O3 nanowires on Cu3As seeds via vapor-solid-solid mechanism.JOURNAL OF ALLOYS AND COMPOUNDS,864,7.
MLA Wang, Hang,et al."< 110 >-growth orientation dependence of Ga2O3 nanowires on Cu3As seeds via vapor-solid-solid mechanism".JOURNAL OF ALLOYS AND COMPOUNDS 864(2021):7.
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