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Highly Textured Assembly of Engineered Si Nanowires for Artificial Synapses Model
Duan, Chunyang1; Zhao, Dong1; Wang, Xiang1; Ren, Bei1,2; Li, Mengqi1; Zhao, Zenghua1; Liu, Hongying2; Sham, Tsun-Kong3,4; Wang, Yu1
2021-03-23
Source PublicationACS APPLIED ELECTRONIC MATERIALS
Volume3Issue:3Pages:1375-1383
AbstractUniformly aligned silicon nanowire (SiNW) arrays are promising building blocks for a range of photoelectrical and sensing devices attributable to their unique optical, electrical, structural, mechanical, and thermal properties. In particular, the large-area and high-density assembled planar SiNWs arrays with a horizontal orientation can have critical applications in nanoelectronics. However, the fabrication of textured silicon nanowires with high throughput also faces the challenges of cost, processing cycle, and precision. Herein we demonstrate a high throughput fabrication and horizontal texture alignment stratagem for wafer-scale high-density SiNWs, which thereby is employed in ionic-gel electrolyte gated pseudodiode transistor for artificial synapses. Integration hypergravity (HiGee) into controllable metal-assisted chemical etching process enables the vertically aligned SiNWs thus obtained with unprecedented uniformity, high aspect ratio, and very smooth surface. Highly horizontal textured SiNWs with good semiconductor character were obtained from a bio-inspired in situ assembled method by mechanical shear force induced controlled breakage using graphene quantum dots (GQDs) as a solid lubricant. Finally, the textured SiNW channel-based pseudodiode transistor exhibits excellent activity-dependent inhibitory and excitatory synaptic behaviors with good operational performance mimicked from biological synapse system. The proposed artificial synapse may find potential applications in energetic effective neuromorphic platforms. The fabrication strategy and the highly textured SiNW arrays also hold great promise for other nanostructure building blocks.
KeywordSi nanowires HiGee technology assembly graphene quantum dots artificial synapses
DOI10.1021/acsaelm.1c00004
Language英语
Funding ProjectNational Natural Science Foundation of China[21875256] ; National Natural Science Foundation of China[21473209] ; National Natural Science Foundation of China[51503210] ; Key Laboratory of Photochemical Conversion and Optoelectronic Materials, TIPC, CAS[PCOM202013]
WOS Research AreaEngineering ; Materials Science
WOS SubjectEngineering, Electrical & Electronic ; Materials Science, Multidisciplinary
Funding OrganizationNational Natural Science Foundation of China ; Key Laboratory of Photochemical Conversion and Optoelectronic Materials, TIPC, CAS
WOS IDWOS:000634556600038
PublisherAMER CHEMICAL SOC
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Document Type期刊论文
Identifierhttp://ir.ipe.ac.cn/handle/122111/48281
Collection中国科学院过程工程研究所
Corresponding AuthorWang, Yu
Affiliation1.Chinese Acad Sci, Inst Proc Engn, State Key Lab Multiphase Complex Syst, Beijing 100190, Peoples R China
2.China Univ Min & Technol Beijing, Sch Chem & Environm Engn, Beijing 100083, Peoples R China
3.Univ Western Ontario, Dept Chem, London, ON N6A 5B7, Canada
4.Univ Western Ontario, Soochow Western Ctr Synchrotron Radiat Res, London, ON N6A 5B7, Canada
Recommended Citation
GB/T 7714
Duan, Chunyang,Zhao, Dong,Wang, Xiang,et al. Highly Textured Assembly of Engineered Si Nanowires for Artificial Synapses Model[J]. ACS APPLIED ELECTRONIC MATERIALS,2021,3(3):1375-1383.
APA Duan, Chunyang.,Zhao, Dong.,Wang, Xiang.,Ren, Bei.,Li, Mengqi.,...&Wang, Yu.(2021).Highly Textured Assembly of Engineered Si Nanowires for Artificial Synapses Model.ACS APPLIED ELECTRONIC MATERIALS,3(3),1375-1383.
MLA Duan, Chunyang,et al."Highly Textured Assembly of Engineered Si Nanowires for Artificial Synapses Model".ACS APPLIED ELECTRONIC MATERIALS 3.3(2021):1375-1383.
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