Low-temperature purification process of metallurgical silicon | |
Zhao Li-xin1,2; Wang Zhi1; Guo Zhan-cheng1,3; Li Cheng-yi4; Guo, ZC | |
2011-05-01 | |
Source Publication | TRANSACTIONS OF NONFERROUS METALS SOCIETY OF CHINA
![]() |
ISSN | 1003-6326 |
Volume | 21Issue:5Pages:1185-1192 |
Abstract | The removal of B and P consumes most of heat energy in Si metallurgical purification process for solar-grade Si. Metal-liquating purification of metallurgical grade silicon (MG-Si), also called Si-recrystallization from metal liquid, was a potential energy-saving method for the removal of B and P efficiently, since Si could be melted at lower temperature by alloying with metal. The selection criteria of metal-liquating system was elaborated, and Al, Sn and In were selected out as the optimum metallic mediums. For Sn-Si system, the segregation coefficient of B decreased to 0.038 at 1 500 K, which was much less than 0.8 at the melting point of Si. The mass fraction of B was diminished from 15x10(-6) to 0.1x10(-6) as MG-Si was purified by twice, while that of most metallic elements could be decreased to 0.1x10(-6) by purifying just once. During the metal-liquating process, the formation of compounds between impurity elements and Si was also an important route of impurity removal. Finally, one low-temperature metallurgical process based on metal-liquating method was proposed. |
Keyword | Metal Liquating Method Metallurgical Purification Process Tin-silicon System Solar Grade Silicon |
Subtype | Article |
WOS Headings | Science & Technology ; Technology |
DOI | 10.1016/S1003-6326(11)60841-8 |
Indexed By | SCI |
Language | 英语 |
WOS Keyword | SOLAR-GRADE-SILICON ; LIQUID-PHASE EPITAXY ; MOLTEN SILICON ; REMOVAL ; PHOSPHORUS ; BORON ; THERMODYNAMICS ; FEEDSTOCK ; PLASMA ; CELLS |
WOS Research Area | Metallurgy & Metallurgical Engineering |
WOS Subject | Metallurgy & Metallurgical Engineering |
WOS ID | WOS:000291472500035 |
Citation statistics | |
Document Type | 期刊论文 |
Version | 出版稿 |
Identifier | http://ir.ipe.ac.cn/handle/122111/4868 |
Collection | 湿法冶金清洁生产技术国家工程实验室 |
Corresponding Author | Guo, ZC |
Affiliation | 1.Chinese Acad Sci, Natl Engn Lab Hydromet Cleaner Prod Technol, Inst Proc Engn, Beijing 100190, Peoples R China 2.Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China 3.Univ Sci & Technol Beijing, State Key Lab Adv Met, Beijing 100083, Peoples R China 4.China Univ Min & Technol, Sch Chem & Environm Engn, Beijing 100083, Peoples R China |
Recommended Citation GB/T 7714 | Zhao Li-xin,Wang Zhi,Guo Zhan-cheng,et al. Low-temperature purification process of metallurgical silicon[J]. TRANSACTIONS OF NONFERROUS METALS SOCIETY OF CHINA,2011,21(5):1185-1192. |
APA | Zhao Li-xin,Wang Zhi,Guo Zhan-cheng,Li Cheng-yi,&Guo, ZC.(2011).Low-temperature purification process of metallurgical silicon.TRANSACTIONS OF NONFERROUS METALS SOCIETY OF CHINA,21(5),1185-1192. |
MLA | Zhao Li-xin,et al."Low-temperature purification process of metallurgical silicon".TRANSACTIONS OF NONFERROUS METALS SOCIETY OF CHINA 21.5(2011):1185-1192. |
Files in This Item: | ||||||
File Name/Size | DocType | Version | Access | License | ||
20131105-909-复件 1-s2(574KB) | 期刊论文 | 出版稿 | 限制开放 | CC BY-NC-SA | Application Full Text |
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment