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Low-temperature purification process of metallurgical silicon
Zhao Li-xin1,2; Wang Zhi1; Guo Zhan-cheng1,3; Li Cheng-yi4; Guo, ZC
2011-05-01
Source PublicationTRANSACTIONS OF NONFERROUS METALS SOCIETY OF CHINA
ISSN1003-6326
Volume21Issue:5Pages:1185-1192
AbstractThe removal of B and P consumes most of heat energy in Si metallurgical purification process for solar-grade Si. Metal-liquating purification of metallurgical grade silicon (MG-Si), also called Si-recrystallization from metal liquid, was a potential energy-saving method for the removal of B and P efficiently, since Si could be melted at lower temperature by alloying with metal. The selection criteria of metal-liquating system was elaborated, and Al, Sn and In were selected out as the optimum metallic mediums. For Sn-Si system, the segregation coefficient of B decreased to 0.038 at 1 500 K, which was much less than 0.8 at the melting point of Si. The mass fraction of B was diminished from 15x10(-6) to 0.1x10(-6) as MG-Si was purified by twice, while that of most metallic elements could be decreased to 0.1x10(-6) by purifying just once. During the metal-liquating process, the formation of compounds between impurity elements and Si was also an important route of impurity removal. Finally, one low-temperature metallurgical process based on metal-liquating method was proposed.
KeywordMetal Liquating Method Metallurgical Purification Process Tin-silicon System Solar Grade Silicon
SubtypeArticle
WOS HeadingsScience & Technology ; Technology
DOI10.1016/S1003-6326(11)60841-8
Indexed BySCI
Language英语
WOS KeywordSOLAR-GRADE-SILICON ; LIQUID-PHASE EPITAXY ; MOLTEN SILICON ; REMOVAL ; PHOSPHORUS ; BORON ; THERMODYNAMICS ; FEEDSTOCK ; PLASMA ; CELLS
WOS Research AreaMetallurgy & Metallurgical Engineering
WOS SubjectMetallurgy & Metallurgical Engineering
WOS IDWOS:000291472500035
Citation statistics
Cited Times:43[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Version出版稿
Identifierhttp://ir.ipe.ac.cn/handle/122111/4868
Collection湿法冶金清洁生产技术国家工程实验室
Corresponding AuthorGuo, ZC
Affiliation1.Chinese Acad Sci, Natl Engn Lab Hydromet Cleaner Prod Technol, Inst Proc Engn, Beijing 100190, Peoples R China
2.Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China
3.Univ Sci & Technol Beijing, State Key Lab Adv Met, Beijing 100083, Peoples R China
4.China Univ Min & Technol, Sch Chem & Environm Engn, Beijing 100083, Peoples R China
Recommended Citation
GB/T 7714
Zhao Li-xin,Wang Zhi,Guo Zhan-cheng,et al. Low-temperature purification process of metallurgical silicon[J]. TRANSACTIONS OF NONFERROUS METALS SOCIETY OF CHINA,2011,21(5):1185-1192.
APA Zhao Li-xin,Wang Zhi,Guo Zhan-cheng,Li Cheng-yi,&Guo, ZC.(2011).Low-temperature purification process of metallurgical silicon.TRANSACTIONS OF NONFERROUS METALS SOCIETY OF CHINA,21(5),1185-1192.
MLA Zhao Li-xin,et al."Low-temperature purification process of metallurgical silicon".TRANSACTIONS OF NONFERROUS METALS SOCIETY OF CHINA 21.5(2011):1185-1192.
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