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Effect of boron on the surface tension of molten silicon and its temperature coefficient
Alternative TitleJ. Colloid Interface Sci.
Yuan, ZF; Mukai, K
2004-02-01
Source PublicationJOURNAL OF COLLOID AND INTERFACE SCIENCE
ISSN0021-9797
Volume270Issue:1Pages:140-145
AbstractThe influence of boron concentration (CB/mass%) on the surface tension of molten silicon has been investigated with the sessile drop method under oxygen partial pressure P-O2 = 1.62 x 10(-25)-2.63 x 10(-22) MPa, and the results can be summarized as follows. The surface tension increases with CB in the range below 2.09 mass%, and the maximum increase rate of the surface tension is about 30 mN m(-1) (mass% C-B)(-1). The temperature coefficient of the surface tension, (partial derivative(sigma)/partial derivativeT)C-B, was found to increase with the boron concentration in molten silicon. At the interface between molten silicon and the BN substrate, a discontinuous Si3N4 layer was reckoned to form and the layer might prevent BN from dissolving into the molten silicon. Since dissolved boron from the BN substrate into the molten silicon is below 0.054 mass% and the associated increase in surface tension is below 1.5 MN m(-1), the contamination from the BN substrate on the surface tension can be ignored. The relation between the surface tension and C-B indicates negative adsorption of boron and can be well described by combining the Gibbs adsorption isotherm with the Langmuir isotherm. (C) 2003 Elsevier Inc. All rights reserved.; The influence of boron concentration (CB/mass%) on the surface tension of molten silicon has been investigated with the sessile drop method under oxygen partial pressure P-O2 = 1.62 x 10(-25)-2.63 x 10(-22) MPa, and the results can be summarized as follows. The surface tension increases with CB in the range below 2.09 mass%, and the maximum increase rate of the surface tension is about 30 mN m(-1) (mass% C-B)(-1). The temperature coefficient of the surface tension, (partial derivative(sigma)/partial derivativeT)C-B, was found to increase with the boron concentration in molten silicon. At the interface between molten silicon and the BN substrate, a discontinuous Si3N4 layer was reckoned to form and the layer might prevent BN from dissolving into the molten silicon. Since dissolved boron from the BN substrate into the molten silicon is below 0.054 mass% and the associated increase in surface tension is below 1.5 MN m(-1), the contamination from the BN substrate on the surface tension can be ignored. The relation between the surface tension and C-B indicates negative adsorption of boron and can be well described by combining the Gibbs adsorption isotherm with the Langmuir isotherm. (C) 2003 Elsevier Inc. All rights reserved.
KeywordSurface Tension Molten Silicon Boron Sessile Drop Method Oxygen Partial Pressure Temperature Coefficient
SubtypeArticle
WOS HeadingsScience & Technology ; Physical Sciences
DOI10.1016/S0021-9797(03)00262-5
URL查看原文
Indexed BySCI
Language英语
WOS KeywordOXYGEN ; ALLOYS ; WETTABILITY
WOS Research AreaChemistry
WOS SubjectChemistry, Physical
WOS IDWOS:000187883900018
Citation statistics
Cited Times:21[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Version出版稿
Identifierhttp://ir.ipe.ac.cn/handle/122111/4918
Collection研究所(批量导入)
Affiliation1.Chinese Acad Sci, Inst Proc Engn, Multiphase React Lab, Beijing 100080, Peoples R China
2.Kyushu Inst Technol, Fac Engn, Dept Mat Sci & Engn, Kitakyushu, Fukuoka 8048550, Japan
Recommended Citation
GB/T 7714
Yuan, ZF,Mukai, K. Effect of boron on the surface tension of molten silicon and its temperature coefficient[J]. JOURNAL OF COLLOID AND INTERFACE SCIENCE,2004,270(1):140-145.
APA Yuan, ZF,&Mukai, K.(2004).Effect of boron on the surface tension of molten silicon and its temperature coefficient.JOURNAL OF COLLOID AND INTERFACE SCIENCE,270(1),140-145.
MLA Yuan, ZF,et al."Effect of boron on the surface tension of molten silicon and its temperature coefficient".JOURNAL OF COLLOID AND INTERFACE SCIENCE 270.1(2004):140-145.
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