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Observation of dislocation etch pits in a sapphire crystal grown by Cz method using environmental SEM
Alternative TitleJ. Cryst. Growth
Xiao, JZ; Yin, ST; Shao, MJ; Zhang, XY
2004-06-01
Source PublicationJOURNAL OF CRYSTAL GROWTH
ISSN0022-0248
Volume266Issue:4Pages:519-522
AbstractThe dislocation etch pits in an as-grown [0 0 0 1] direction sapphire crystal (alpha-Al-2-O-3) produced by Cz method were investigated using an environmental scanning electron microscope for the first time. The clear and stable contrast images of triangular, hexagonal, and quadrilateral etch pits were observed, which demonstrate the structural symmetry of sapphire crystal along [0 0 0 1] direction. The dislocation density we measured is 1-2 x 10(5)/cm(2) and the formation of the etch pits is also discussed. (C) 2004 Elsevier B.V. All rights reserved.; The dislocation etch pits in an as-grown [0 0 0 1] direction sapphire crystal (alpha-Al-2-O-3) produced by Cz method were investigated using an environmental scanning electron microscope for the first time. The clear and stable contrast images of triangular, hexagonal, and quadrilateral etch pits were observed, which demonstrate the structural symmetry of sapphire crystal along [0 0 0 1] direction. The dislocation density we measured is 1-2 x 10(5)/cm(2) and the formation of the etch pits is also discussed. (C) 2004 Elsevier B.V. All rights reserved.
KeywordCrystal Structure Dislocation-etch Pit Environmental Scanning Electron Microscopy Image Contrast Czochralski Method Sapphire
SubtypeArticle
WOS HeadingsScience & Technology ; Physical Sciences ; Technology
DOI10.1016/j.crysgro.2004.03.021
URL查看原文
Indexed BySCI
Language英语
WOS Research AreaCrystallography ; Materials Science ; Physics
WOS SubjectCrystallography ; Materials Science, Multidisciplinary ; Physics, Applied
WOS IDWOS:000221917400019
Citation statistics
Cited Times:6[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Version出版稿
Identifierhttp://ir.ipe.ac.cn/handle/122111/4980
Collection研究所(批量导入)
Affiliation1.Fudan Univ, Dept Phys, Synchrotron Radiat Res Ctr, Shanghai 200433, Peoples R China
2.Chinese Acad Sci, Anhui Inst Opt & Fine Mech, Hefei 230031, Peoples R China
3.Chinese Acad Sci, Inst Chem Met, Beijing 100080, Peoples R China
4.Nanjing Univ, Solid State Microstruct Lab, Nanjing 210008, Peoples R China
Recommended Citation
GB/T 7714
Xiao, JZ,Yin, ST,Shao, MJ,et al. Observation of dislocation etch pits in a sapphire crystal grown by Cz method using environmental SEM[J]. JOURNAL OF CRYSTAL GROWTH,2004,266(4):519-522.
APA Xiao, JZ,Yin, ST,Shao, MJ,&Zhang, XY.(2004).Observation of dislocation etch pits in a sapphire crystal grown by Cz method using environmental SEM.JOURNAL OF CRYSTAL GROWTH,266(4),519-522.
MLA Xiao, JZ,et al."Observation of dislocation etch pits in a sapphire crystal grown by Cz method using environmental SEM".JOURNAL OF CRYSTAL GROWTH 266.4(2004):519-522.
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