CAS OpenIR
Numerical Simulation of Flow Field Optimizing the Rotating Segregation Purification of Silicon for SoG-Si
Shang, Runlong1; Qian, Guoyu2,3; Wang, Zhi2,3; Zhou, Lu2; Sheng, Zhilin1
2022-05-27
Source PublicationMETALLURGICAL AND MATERIALS TRANSACTIONS B-PROCESS METALLURGY AND MATERIALS PROCESSING SCIENCE
ISSN1073-5615
Pages18
AbstractIn order to improve the preparation efficiency of high-purity silicon, a new method of rotary segregation purification has been developed to prepare polysilicon. Numerical simulation based on ANSYS19.0 software and water model experiments were used to study the distribution of flow field and optimize the impurity removal process. A numerical simulation model suitable for rotating interface is established. The simulation result is in good agreement with the water model experiment. A vortex flow is found in the middle of the mold when the mold insertion depth is 90 mm. The vortex is conducive to the thinning of the impurity enrichment layer at the solid-liquid interface. With the mold insertion depth increases from 90 to 170 mm, two vortex flows appear in the middle and bottom of the mold, respectively. Moreover, setting the mold rotation rate at 100 rpm can contribute to a more stable flow field and a higher melt flow velocity. When the diffusion layer thickness is less than 0.1 mm, the impurity segregation coefficient can approach close to its equilibrium segregation coefficient, indicating that impurity segregation be effectively enhanced by increasing the rotation rate of mold, strengthening the effect of solidification rate and increasing the rotational speed. Industrial tests were carried out at the 100 kg level. The result shows that the rotary segregation method and equipment can achieve the removal of very low impurity in silicon (99.999 pct), and SoG-Si (99.9999 pct) was obtained. This method provides a new way for silicon purification, and it is believed that better results can be obtained through continuous improvement.
DOI10.1007/s11663-022-02558-7
Language英语
WOS KeywordCFD SIMULATION ; DIRECTIONAL SOLIDIFICATION ; PIV MEASUREMENT ; MAGNETIC-FIELD ; STIRRED TANKS ; GAS-LIQUID ; ALLOY ; SEPARATION ; REMOVAL ; MELT
Funding ProjectNational Key R&D Program of China[2018YFC1901801] ; National Natural Science Foundation of China[51934006] ; National Natural Science Foundation of China[U1902219]
WOS Research AreaMaterials Science ; Metallurgy & Metallurgical Engineering
WOS SubjectMaterials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
Funding OrganizationNational Key R&D Program of China ; National Natural Science Foundation of China
WOS IDWOS:000805488100003
PublisherSPRINGER
Citation statistics
Document Type期刊论文
Identifierhttp://ir.ipe.ac.cn/handle/122111/53711
Collection中国科学院过程工程研究所
Corresponding AuthorQian, Guoyu
Affiliation1.North Minzu Univ, 204 Wenchang North St, Yinchuan 750001, Ningxia, Peoples R China
2.Chinese Acad Sci, Natl Engn Res Ctr Green Recycling Strateg Met Res, Inst Proc Engn, 1 North 2nd St, Beijing 100190, Peoples R China
3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
Recommended Citation
GB/T 7714
Shang, Runlong,Qian, Guoyu,Wang, Zhi,et al. Numerical Simulation of Flow Field Optimizing the Rotating Segregation Purification of Silicon for SoG-Si[J]. METALLURGICAL AND MATERIALS TRANSACTIONS B-PROCESS METALLURGY AND MATERIALS PROCESSING SCIENCE,2022:18.
APA Shang, Runlong,Qian, Guoyu,Wang, Zhi,Zhou, Lu,&Sheng, Zhilin.(2022).Numerical Simulation of Flow Field Optimizing the Rotating Segregation Purification of Silicon for SoG-Si.METALLURGICAL AND MATERIALS TRANSACTIONS B-PROCESS METALLURGY AND MATERIALS PROCESSING SCIENCE,18.
MLA Shang, Runlong,et al."Numerical Simulation of Flow Field Optimizing the Rotating Segregation Purification of Silicon for SoG-Si".METALLURGICAL AND MATERIALS TRANSACTIONS B-PROCESS METALLURGY AND MATERIALS PROCESSING SCIENCE (2022):18.
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