Controllable Ga/Ga2O3 Nanowire Growth at High Temperatures Enabled by Au and Pd Quantum Dot Catalysts

doi:10.1021/acs.cgd.2c00752

CAS OpenIR

	Controllable Ga/Ga2O3 Nanowire Growth at High Temperatures Enabled by Au and Pd Quantum Dot Catalysts
	Wang, Hang 1,2; Yang, Jiawei 3; Wang, Anqi 2; Wang, Ying 4; Han, Ning 1; Yang, Jun 2; Chen, Yunfa 2
	2022-09-15
Source Publication	CRYSTAL GROWTH & DESIGN
ISSN	1528-7483
Pages	7
Abstract	Though Ga has increasing roles such as electrocatalytic reduction of CO2 and its one-dimensional structure can provide an effective electron pathway, it is challenging to synthesize Ga nanowires (NWs) due to its low melting point (29.7 degrees C). In this study, single-crystalline Ga/Ga2O3 NWs are synthesized by chemical vapor deposition at 650 degrees C by using Au and Pd quantum dots (QDs) as catalysts and GaSb as the Ga source. The results show that the growth of Ga/Ga2O3 NWs is dependent on the size of the QDs, where smaller Au (2.7-3.8 nm) and Pd (1.9-3.6 nm) favor Ga/Ga2O3 NW growth, while larger Au (7.1 nm) and Pd (8.9 nm) lead to more GaSb NW growth. Further, the <110>- and <100>-oriented NWs are preferentially grown by the Au and Pd catalysts. The Ga/Ga2O3 NWs have a thin surface oxide layer, which is verified by X-ray photoelectron spectroscopy, which also accounts for the Schottky contact of the Ga/Ga2O3 NWs with Ni electrodes. The Ga/Ga2O3 NWs persist the single-crystalline phase to at least 400 degrees C by in situ transmittance electron microscopy observation, and the NW shape breaks until 950 degrees C by annealing in air.
DOI	10.1021/acs.cgd.2c00752
Language	英语
WOS Keyword	OPTICAL-PROPERTIES ; NANOPARTICLES ; TRANSPARENT ; FILMS
Funding Project	National Natural Science Foundation of China[51602314] ; National Natural Science Foundation of China[61504151]
WOS Research Area	Chemistry ; Crystallography ; Materials Science
WOS Subject	Chemistry, Multidisciplinary ; Crystallography ; Materials Science, Multidisciplinary
Funding Organization	National Natural Science Foundation of China
WOS ID	WOS:000861771600001
Publisher	AMER CHEMICAL SOC
Citation statistics
Document Type	期刊论文
Identifier	http://ir.ipe.ac.cn/handle/122111/54870
Collection	中国科学院过程工程研究所
Corresponding Author	Han, Ning; Yang, Jun; Chen, Yunfa
Affiliation	1.Xian Univ Architecture & Technol, Sch Met Engn, Xian 710055, Peoples R China 2.Chinese Acad Sci, State Key Lab Multiphase Complex Syst, Inst Proc Engn, Beijing 100190, Peoples R China 3.Tsinghua Univ, Future Lab, Beijing 100084, Peoples R China 4.Beijing Jiaotong Univ, Sch Sci, Dept Phys, Beijing 100044, Peoples R China
Recommended Citation GB/T 7714	Wang, Hang,Yang, Jiawei,Wang, Anqi,et al. Controllable Ga/Ga2O3 Nanowire Growth at High Temperatures Enabled by Au and Pd Quantum Dot Catalysts[J]. CRYSTAL GROWTH & DESIGN,2022:7.
APA	Wang, Hang.,Yang, Jiawei.,Wang, Anqi.,Wang, Ying.,Han, Ning.,...&Chen, Yunfa.(2022).Controllable Ga/Ga2O3 Nanowire Growth at High Temperatures Enabled by Au and Pd Quantum Dot Catalysts.CRYSTAL GROWTH & DESIGN,7.
MLA	Wang, Hang,et al."Controllable Ga/Ga2O3 Nanowire Growth at High Temperatures Enabled by Au and Pd Quantum Dot Catalysts".CRYSTAL GROWTH & DESIGN (2022):7.

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