Knowledge Management System Of Institute of process engineering,CAS
| Continuous epitaxy of single-crystal graphite films by isothermal carbon diffusion through nickel | |
Zhang, Zhibin1; Ding, Mingchao2,3; Cheng, Ting4,5; Qiao, Ruixi6; Zhao, Mengze1; Luo, Mingyan7,8; Wang, Enze9; Sun, Yufei9; Zhang, Shuai10; Li, Xingguang1; Zhang, Zhihong1; Mao, Hancheng11 ; Liu, Fang1; Fu, Ying12; Liu, Kehai12; Zou, Dingxin13; Liu, Can1; Wu, Muhong6,12,14; Fan, Chuanlin11; Zhu, Qingshan11; Wang, Xinqiang1; Gao, Peng6; Li, Qunyang10; Liu, Kai9; Zhang, Yuanbo7,8; Bai, Xuedong2,3,12; Yu, Dapeng13; Ding, Feng4,15; Wang, Enge6,12,16; Liu, Kaihui1,6,12
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| 2022-10-27 | |
| Source Publication | NATURE NANOTECHNOLOGY
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| ISSN | 1748-3387 |
| Pages | 9 |
| Abstract | Multilayer van der Waals (vdW) film materials have attracted extensive interest from the perspective of both fundamental research' and technology(4-7). However, the synthesis of large, thick, single-crystal vdW materials remains a great challenge because the lack of out-of-plane chemical bonds weakens the epitaxial relationship between neighbouring layers'. Here we report the continuous epitaxial growth of single-crystal graphite films with thickness up to 100,000 layers on high-index, single-crystal nickel (Ni) foils. Our epitaxial graphite films demonstrate high single crystallinity, including an ultra-flat surface, centimetre-size single-crystal domains and a perfect AB-stacking structure. The exfoliated graphene shows excellent physical properties, such as a high thermal conductivity of similar to 2,880 W m(-1) K-1, intrinsic Young's modulus of similar to 1.0 TPa and low doping density of similar to 2.2 x 10(10) cm(-2). The growth of each single-crystal graphene layer is realized by step edge-guided epitaxy on a high-index Ni surface, and continuous growth is enabled by the isothermal dissolution-diffusion-precipitation of carbon atoms driven by a chemical potential gradient between the two Ni surfaces. The isothermal growth enables the layers to grow at optimal conditions, without stacking disorders or stress gradients in the final graphite. Our findings provide a facile and scalable avenue for the synthesis of high-quality, thick vdW films for various applications. |
| DOI | 10.1038/s41565-022-01230-0 |
| Language | 英语 |
| WOS Keyword | TOTAL-ENERGY CALCULATIONS ; GRAPHENE ; GROWTH |
| Funding Project | Guangdong Major Project of Basic and Applied Basic Research[2021B0301030002] ; National Natural Science Foundation of China[52025023] ; National Natural Science Foundation of China[51991342] ; National Natural Science Foundation of China[52021006] ; National Natural Science Foundation of China[11888101] ; National Natural Science Foundation of China[92163206] ; National Natural Science Foundation of China[52172035] ; National Natural Science Foundation of China[52125307] ; National Natural Science Foundation of China[T2188101] ; Key R&D Programme of Guangdong Province[2019B010931001] ; Key R&D Programme of Guangdong Province[2018B030327001] ; National Key R&D Programme of China[2021YFB3200303] ; National Key R&D Programme of China[2021YFA1400502] ; Strategic Priority Research Programme of Chinese Academy of Sciences[XDB33000000] ; Beijing Natural Science Foundation[JQ19004] ; Tencent Foundation ; Institute for Basic Science of South Korea[IBS-R019-D1] |
| WOS Research Area | Science & Technology - Other Topics ; Materials Science |
| WOS Subject | Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary |
| Funding Organization | Guangdong Major Project of Basic and Applied Basic Research ; National Natural Science Foundation of China ; Key R&D Programme of Guangdong Province ; National Key R&D Programme of China ; Strategic Priority Research Programme of Chinese Academy of Sciences ; Beijing Natural Science Foundation ; Tencent Foundation ; Institute for Basic Science of South Korea |
| WOS ID | WOS:000874394200004 |
| Publisher | NATURE PORTFOLIO |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.ipe.ac.cn/handle/122111/55258 |
| Collection | 中国科学院过程工程研究所 |
| Corresponding Author | Yu, Dapeng; Ding, Feng; Wang, Enge; Liu, Kaihui |
| Affiliation | 1.Peking Univ, Frontiers Sci Ctr Nanooptoelect, Sch Phys, State Key Lab Mesoscop Phys, Beijing, Peoples R China 2.Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing, Peoples R China 3.Univ Chinese Acad Sci, Sch Phys Sci, Beijing, Peoples R China 4.Inst Basic Sci, Ctr Multidimens Carbon Mat, Ulsan, South Korea 5.Peking Univ, Acad Adv Interdisciplinary Studies, Coll Chem & Mol Engn, Beijing, Peoples R China 6.Peking Univ, Int Ctr Quantum Mat, Collaborat Innovat Ctr Quantum Matter, Beijing, Peoples R China 7.Fudan Univ, State Key Lab Surface Phys, Shanghai, Peoples R China 8.Fudan Univ, Dept Phys, Shanghai, Peoples R China 9.Tsinghua Univ, Sch Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing, Peoples R China 10.Tsinghua Univ, State Key Lab Tribol Adv Equipment, Appl Mech Lab, Beijing, Peoples R China 11.Chinese Acad Sci, Inst Proc Engn, State Key Lab Multiphase Complex Syst, Beijing, Peoples R China 12.Songshan Lake Mat Lab, Dongguan, Peoples R China 13.Southern Univ Sci & Technol, Shenzhen Inst Quantum Sci & Engn, Shenzhen, Peoples R China 14.Peking Univ, Interdisciplinary Inst Light, Element Quantum Mat & Res Ctr Light Element Adv M, Beijing, Peoples R China 15.Ulsan Natl Inst Sci & Technol, Sch Mat Sci & Engn, Ulsan, South Korea 16.Liaoning Univ, Sch Phys, Shenyang, Peoples R China |
| Recommended Citation GB/T 7714 | Zhang, Zhibin,Ding, Mingchao,Cheng, Ting,et al. Continuous epitaxy of single-crystal graphite films by isothermal carbon diffusion through nickel[J]. NATURE NANOTECHNOLOGY,2022:9. |
| APA | Zhang, Zhibin.,Ding, Mingchao.,Cheng, Ting.,Qiao, Ruixi.,Zhao, Mengze.,...&Liu, Kaihui.(2022).Continuous epitaxy of single-crystal graphite films by isothermal carbon diffusion through nickel.NATURE NANOTECHNOLOGY,9. |
| MLA | Zhang, Zhibin,et al."Continuous epitaxy of single-crystal graphite films by isothermal carbon diffusion through nickel".NATURE NANOTECHNOLOGY (2022):9. |
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