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Effects of antimony on the surface tension of molten silicon
Alternative TitleJ. Colloid Interface Sci.
Yuan, ZF; Mukai, K; Huang, WL
2002-05-15
Source PublicationJOURNAL OF COLLOID AND INTERFACE SCIENCE
ISSN0021-9797
Volume249Issue:2Pages:471-475
AbstractThe effect of antimony concentration (C-Sb/mass%) on the surface tension of molten silicon has been determined with the sessile drop method in the temperature range from 1693 to 1773 K and in the range of the oxygen partial pressure, PO2, in an Ar atmosphere from 10(-23) to 10(-21) MPa. The results show that the surface tension of molten silicon decreases with increasing Sb concentration in the range Of C-Sb < 0.9 mass%, which indicates positive adsorption of Sb in molten silicon and can be fairly described with the Szyszkowski's equation. The maximum decrease rate of surface tension is about 65 mN m(-1) (mass% C-Sb)(-1), and the temperature coefficient of surface tension, (partial derivativesigma/partial derivativeT)C-Sb, increases with increasing C-Sb. The evaporation of the systems was only observed between the melting points of antimony (904 K) and silicon (1683 K), and the surface tension presents no dependence on measuring time above the melting point of silicon. (C) 2002 Elsevier Science (USA).; The effect of antimony concentration (C-Sb/mass%) on the surface tension of molten silicon has been determined with the sessile drop method in the temperature range from 1693 to 1773 K and in the range of the oxygen partial pressure, PO2, in an Ar atmosphere from 10(-23) to 10(-21) MPa. The results show that the surface tension of molten silicon decreases with increasing Sb concentration in the range Of C-Sb < 0.9 mass%, which indicates positive adsorption of Sb in molten silicon and can be fairly described with the Szyszkowski's equation. The maximum decrease rate of surface tension is about 65 mN m(-1) (mass% C-Sb)(-1), and the temperature coefficient of surface tension, (partial derivativesigma/partial derivativeT)C-Sb, increases with increasing C-Sb. The evaporation of the systems was only observed between the melting points of antimony (904 K) and silicon (1683 K), and the surface tension presents no dependence on measuring time above the melting point of silicon. (C) 2002 Elsevier Science (USA).
KeywordSurface Tension Molten Silicon Antimony Sessile Drop Method Oxygen Partial Pressure
SubtypeArticle
WOS HeadingsScience & Technology ; Physical Sciences
DOI10.1006/jcis.2002.8270
URL查看原文
Indexed BySCI
Language英语
WOS KeywordOXYGEN PARTIAL-PRESSURE
WOS Research AreaChemistry
WOS SubjectChemistry, Physical
WOS IDWOS:000175431600028
Citation statistics
Cited Times:11[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Version出版稿
Identifierhttp://ir.ipe.ac.cn/handle/122111/5672
Collection研究所(批量导入)
Affiliation1.Chinese Acad Sci, Inst Proc Engn, Multi Phase React Lab, Beijing 100080, Peoples R China
2.Chinese Acad Sci, Natl Micrograv Lab China, Beijing 100080, Peoples R China
3.Kyushu Inst Technol, Fac Engn, Dept Mat Sci & Engn, Kitakyushu, Fukuoka 8048550, Japan
Recommended Citation
GB/T 7714
Yuan, ZF,Mukai, K,Huang, WL. Effects of antimony on the surface tension of molten silicon[J]. JOURNAL OF COLLOID AND INTERFACE SCIENCE,2002,249(2):471-475.
APA Yuan, ZF,Mukai, K,&Huang, WL.(2002).Effects of antimony on the surface tension of molten silicon.JOURNAL OF COLLOID AND INTERFACE SCIENCE,249(2),471-475.
MLA Yuan, ZF,et al."Effects of antimony on the surface tension of molten silicon".JOURNAL OF COLLOID AND INTERFACE SCIENCE 249.2(2002):471-475.
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