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Surface tension and its temperature coefficient of molten silicon at different oxygen potentials
Alternative TitleLangmuir
Yuan, ZF; Mukai, K; Huang, WL
2002-03-19
Source PublicationLANGMUIR
ISSN0743-7463
Volume18Issue:6Pages:2054-2062
AbstractPrevious investigations on the effects of temperature and impurities on the, surface tension of molten silicon, and relevant measurement methods have been reviewed, and the influence of oxygen partial pressure (P-O2) in the atmosphere has been analyzed emphatically, on the basis of the results obtained by the sessile drop method and calculations. In the case of P-O2 less than or equal to P-O2.(sat) (the saturated oxygen partial pressure in the Si(l)-O-2(g)-SiO2(S) system), the surface tension First remains almost constant and then decreases remarkably with the increase of P-O2, the temperature coefficient of surface tension (partial derivativesigma/partial derivativeT) is negative and increases with the oxygen partial pressure, and the molten silicon drop is very sensitive to outside vibrations, However. in the case of P-O2 > P-O2.(sat) the surface tension increases slightly with the oxygen partial pressure, partial derivativesigma/partial derivativeT is higher and also increases with P-O2 the molten silicon drop is not influenced by environmental disturbances and remains stable, and EPMA (electron probe microanalyzer) analysis indicates the formation of a thin SiO2(S) film on the surface of the molten silicon drop which might account fur the surface tension increase.; Previous investigations on the effects of temperature and impurities on the, surface tension of molten silicon, and relevant measurement methods have been reviewed, and the influence of oxygen partial pressure (P-O2) in the atmosphere has been analyzed emphatically, on the basis of the results obtained by the sessile drop method and calculations. In the case of P-O2 less than or equal to P-O2.(sat) (the saturated oxygen partial pressure in the Si(l)-O-2(g)-SiO2(S) system), the surface tension First remains almost constant and then decreases remarkably with the increase of P-O2, the temperature coefficient of surface tension (partial derivativesigma/partial derivativeT) is negative and increases with the oxygen partial pressure, and the molten silicon drop is very sensitive to outside vibrations, However. in the case of P-O2 > P-O2.(sat) the surface tension increases slightly with the oxygen partial pressure, partial derivativesigma/partial derivativeT is higher and also increases with P-O2 the molten silicon drop is not influenced by environmental disturbances and remains stable, and EPMA (electron probe microanalyzer) analysis indicates the formation of a thin SiO2(S) film on the surface of the molten silicon drop which might account fur the surface tension increase.
KeywordSolid Silica Drop Method Alloys Flow
SubtypeArticle
WOS HeadingsScience & Technology ; Physical Sciences ; Technology
DOI10.1021/la0112920
URL查看原文
Indexed BySCI
Language英语
WOS KeywordSOLID SILICA ; DROP METHOD ; ALLOYS ; FLOW
WOS Research AreaChemistry ; Materials Science
WOS SubjectChemistry, Multidisciplinary ; Chemistry, Physical ; Materials Science, Multidisciplinary
WOS IDWOS:000174403000017
Citation statistics
Cited Times:31[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Version出版稿
Identifierhttp://ir.ipe.ac.cn/handle/122111/5673
Collection研究所(批量导入)
Affiliation1.Chinese Acad Sci, Inst Proc Engn, Multi Phase React Lab, Beijing 100080, Peoples R China
2.Kyushu Inst Technol, Fac Engn, Dept Mat Sci & Engn, Kitakyushu, Fukuoka 8048550, Japan
Recommended Citation
GB/T 7714
Yuan, ZF,Mukai, K,Huang, WL. Surface tension and its temperature coefficient of molten silicon at different oxygen potentials[J]. LANGMUIR,2002,18(6):2054-2062.
APA Yuan, ZF,Mukai, K,&Huang, WL.(2002).Surface tension and its temperature coefficient of molten silicon at different oxygen potentials.LANGMUIR,18(6),2054-2062.
MLA Yuan, ZF,et al."Surface tension and its temperature coefficient of molten silicon at different oxygen potentials".LANGMUIR 18.6(2002):2054-2062.
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