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Evaluating the doping effect of Fe, Ti and Sn on gas sensing property of ZnO
Han, Ning1,2; Chai, Linyu1,2; Wang, Qi3; Tian, Yajun1; Deng, Pingye4; Chen, Yunfa1; Chen, YF
2010-06-03
Source PublicationSENSORS AND ACTUATORS B-CHEMICAL
ISSN0925-4005
Volume147Issue:2Pages:525-530
AbstractFe-, Ti-, Sn-doped (1.8, 7.4 and 3.4 mol% respectively) and pure ZnO are prepared by hydrothermal method using 10 mol% precursors, whose gas sensing property is studied using formaldehyde as the probe. The results show that the maximum response of pure ZnO to 205 ppm formaldehyde is similar to 43 (at relative humidity 70 +/- 10%) at 400 degrees C. But the gas response maxima shift to 300 degrees C for Fe-ZnO (similar to 52-205 ppm) and Sn-ZnO (similar to 140-205 ppm), and to 200 degrees C for Ti-ZnO (similar to 26-205 ppm). Beyond the maxima, the response of Fe-ZnO is lower than that of pure ZnO, while that of Sn-ZnO is always higher. The morphology, crystal structure, vibration modes, bandgap and crystal defects are studied to investigate the different doping effects on gas sensing property of ZnO. The results show that the secondary phase identified by X-ray diffraction and Raman spectra, and the crystal defects detected by photoluminescence might account for the different sensing behaviors. (C) 2010 Elsevier B.V. All rights reserved.
KeywordZinc Oxide Dopant Gas Sensor Formaldehyde Defects Secondary Phase
SubtypeArticle
WOS HeadingsScience & Technology ; Physical Sciences ; Technology
DOI10.1016/j.snb.2010.03.082
Indexed BySCI
Language英语
WOS KeywordTHIN-FILMS ; ZINC-OXIDE ; SELECTIVE DETECTION ; THERMAL-OXIDATION ; RAMAN-SCATTERING ; SENSORS ; PHOTOLUMINESCENCE ; TEMPERATURE ; NANOSTRUCTURES ; FABRICATION
WOS Research AreaChemistry ; Electrochemistry ; Instruments & Instrumentation
WOS SubjectChemistry, Analytical ; Electrochemistry ; Instruments & Instrumentation
WOS IDWOS:000278679100022
Citation statistics
Cited Times:105[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Version出版稿
Identifierhttp://ir.ipe.ac.cn/handle/122111/6132
Collection多相复杂系统国家重点实验室
Corresponding AuthorChen, YF
Affiliation1.Chinese Acad Sci, Inst Proc Engn, State Key Lab Multiphase Complex Syst, Beijing 100190, Peoples R China
2.Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China
3.Natl Ctr Nanosci & Technol, Beijing 100190, Peoples R China
4.Beijing Ctr Phys & Chem Anal, Beijing 100089, Peoples R China
Recommended Citation
GB/T 7714
Han, Ning,Chai, Linyu,Wang, Qi,et al. Evaluating the doping effect of Fe, Ti and Sn on gas sensing property of ZnO[J]. SENSORS AND ACTUATORS B-CHEMICAL,2010,147(2):525-530.
APA Han, Ning.,Chai, Linyu.,Wang, Qi.,Tian, Yajun.,Deng, Pingye.,...&Chen, YF.(2010).Evaluating the doping effect of Fe, Ti and Sn on gas sensing property of ZnO.SENSORS AND ACTUATORS B-CHEMICAL,147(2),525-530.
MLA Han, Ning,et al."Evaluating the doping effect of Fe, Ti and Sn on gas sensing property of ZnO".SENSORS AND ACTUATORS B-CHEMICAL 147.2(2010):525-530.
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