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Chemical vapor deposition of SiC at different molar ratios of hydrogen to methyltrichlorosilane
Yang Yan1,2; Zhang Wei-gang1; Zhang, WG
2009-10-01
Source PublicationJOURNAL OF CENTRAL SOUTH UNIVERSITY OF TECHNOLOGY
ISSN1005-9784
Volume16Issue:5Pages:730-737
AbstractChemical vapor deposition (CVD) of SiC from methyltrichlorosilane (NITS) was studied at two different molar ratios of H(2) to MTS (n(H(2))/n(MTS)). The total pressure was kept as 100 kPa and the temperature was varied from 850 to 1100 degrees C at a total residence time of 1 s. Steady-state deposition rates as functions of reactor length and of temperature, investigated at different n(H(2))/n(MTS) values, show that hydrogen exhibits strongly influences on the deposition rate. Especially, the deposition of Si co-deposit can be obtained in broader substrate length and at higher temperatures with increasing hydrogen partial pressure. Influence of hydrogen on the deposition process was also studied using gas phase composition and deposit composition analysis at various n(H(2))/n(MTS). SEM micrographs directly show the variation of surface morphologies at various n(H(2))/n(MTS). It can be found that the crystal grain of the deposit at 1100 degrees C is better developed and the crystallization is also improved with increasing n(H(2))/n(MTS).
KeywordMethyltrichlorosilane Silicon Carbide h(2) Mts
SubtypeArticle
WOS HeadingsScience & Technology ; Technology
DOI10.1007/s11771-009-0121-4
Indexed BySCI
Language英语
WOS KeywordCH3SICL3/H-2 GAS PRECURSOR ; SILICON-CARBIDE FILMS ; GROWTH-KINETICS ; CVD ; DICHLORODIMETHYLSILANE ; PHASE ; PYROLYSIS ; CERAMICS ; MODEL
WOS Research AreaMetallurgy & Metallurgical Engineering
WOS SubjectMetallurgy & Metallurgical Engineering
WOS IDWOS:000270849100006
Citation statistics
Cited Times:4[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Version出版稿
Identifierhttp://ir.ipe.ac.cn/handle/122111/6573
Collection多相复杂系统国家重点实验室
Corresponding AuthorZhang, WG
Affiliation1.Chinese Acad Sci, Inst Proc Engn, State Key Lab Multiphase Complex Syst, Beijing 100190, Peoples R China
2.Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China
Recommended Citation
GB/T 7714
Yang Yan,Zhang Wei-gang,Zhang, WG. Chemical vapor deposition of SiC at different molar ratios of hydrogen to methyltrichlorosilane[J]. JOURNAL OF CENTRAL SOUTH UNIVERSITY OF TECHNOLOGY,2009,16(5):730-737.
APA Yang Yan,Zhang Wei-gang,&Zhang, WG.(2009).Chemical vapor deposition of SiC at different molar ratios of hydrogen to methyltrichlorosilane.JOURNAL OF CENTRAL SOUTH UNIVERSITY OF TECHNOLOGY,16(5),730-737.
MLA Yang Yan,et al."Chemical vapor deposition of SiC at different molar ratios of hydrogen to methyltrichlorosilane".JOURNAL OF CENTRAL SOUTH UNIVERSITY OF TECHNOLOGY 16.5(2009):730-737.
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