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Kinetic and Microstructure of SiC Deposited from SiCl4-CH4-H-2
Yang Yan1,2; Zhang Weigang1; Zhang, WG
2009-06-01
Source PublicationCHINESE JOURNAL OF CHEMICAL ENGINEERING
ISSN1004-9541
Volume17Issue:3Pages:419-426
AbstractSilicon carbide was prepared from SiCl4-CH4-H-2 gaseous precursors by isothermal, isobaric chemical vapor deposition (CVD) at atmospheric pressure and temperatures ranging from 900 degrees C to 1100 degrees C. Kinetic studies showed that carbosilane of SiH2Cl2, SiHCl3 and SiCl2 formed from decomposition of SiCl4 and CH4 contributed to the deposition of hexangular facet and granular pebble structured SiC. An average apparent activation energy of 152 kJ.mol(-1) was determined. The overall CVD process was controlled not only by the surface reactions but also by complex gas phase reactions. The as-deposited thin film was characterized using scanning electron microscopy, X-ray diffraction and transmission electron microscopy, these analysis showed that the deposited thin film consisted of pure phase of the beta-SiC, the growth morphology of beta-SiC differs from hexangular facet to granular pebble structures, which varied with substrate length and CVD temperature.
KeywordChemical Vapor Deposition Sic Kinetics Microstructure
SubtypeArticle
WOS HeadingsScience & Technology ; Technology
Indexed BySCI
Language英语
WOS KeywordCHEMICAL-VAPOR-DEPOSITION ; CH3SICL3/H-2 GAS PRECURSOR ; SILICON-CARBIDE ; GROWTH-KINETICS ; METHYLTRICHLOROSILANE ; DICHLORODIMETHYLSILANE ; HYDROGEN ; CVD ; PYROLYSIS ; PHASE
WOS Research AreaEngineering
WOS SubjectEngineering, Chemical
WOS IDWOS:000267682900010
Citation statistics
Cited Times:7[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Version出版稿
Identifierhttp://ir.ipe.ac.cn/handle/122111/6656
Collection多相复杂系统国家重点实验室
Corresponding AuthorZhang, WG
Affiliation1.CAS, Inst Proc Engn, State Key Lab Multiphase Complex Syst, Beijing 100190, Peoples R China
2.Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China
Recommended Citation
GB/T 7714
Yang Yan,Zhang Weigang,Zhang, WG. Kinetic and Microstructure of SiC Deposited from SiCl4-CH4-H-2[J]. CHINESE JOURNAL OF CHEMICAL ENGINEERING,2009,17(3):419-426.
APA Yang Yan,Zhang Weigang,&Zhang, WG.(2009).Kinetic and Microstructure of SiC Deposited from SiCl4-CH4-H-2.CHINESE JOURNAL OF CHEMICAL ENGINEERING,17(3),419-426.
MLA Yang Yan,et al."Kinetic and Microstructure of SiC Deposited from SiCl4-CH4-H-2".CHINESE JOURNAL OF CHEMICAL ENGINEERING 17.3(2009):419-426.
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