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高频等离子体化学气相沉积法制氮化硅的化学平衡计算
洪若瑜; 郑国梁; 李洪钟
1997
Source Publication化工冶金
Issue04Pages:8-15
Abstract基于Gibbs自由能最小原理,开发了热力学通用程序,分析了以Ar为载气、SiCl4和NH3为原料、在高频等离子体化学气相沉积反应器中制备Si3N4超细粉的化学热力学过程得到了在典型条件下系统的主要组成,分析了温度、反应物浓度对平衡组成的影响通过热力学模拟,发现当SiCl4进料口在前,NH3进料口在后,且两个进料口均在高频等离子体尾焰处时,经脱NH4Cl的产物中氮含量较高,而反应物NH3与SiCl4的比例以(6~8):1为好
Keyword氮化硅 等离子体 化学气相沉积 化学平衡
Document Type期刊论文
Version出版稿
Identifierhttp://ir.ipe.ac.cn/handle/122111/7699
Collection研究所(批量导入)
Recommended Citation
GB/T 7714
洪若瑜,郑国梁,李洪钟. 高频等离子体化学气相沉积法制氮化硅的化学平衡计算[J]. 化工冶金,1997(04):8-15.
APA 洪若瑜,郑国梁,&李洪钟.(1997).高频等离子体化学气相沉积法制氮化硅的化学平衡计算.化工冶金(04),8-15.
MLA 洪若瑜,et al."高频等离子体化学气相沉积法制氮化硅的化学平衡计算".化工冶金 .04(1997):8-15.
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