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高频等离子体化学气相沉积法制氮化硅超细粉的工艺研究
洪若瑜; 李洪钟; 李春忠; 胡黎明
1996
Source Publication化工冶金
Issue03Pages:273-277
Abstract以Ar气为载气,SiCl4和NH3为原料,在高频等离子体化学气相沉积反应器中,制备了超细无定形的Si3N4粉未.该粉具有粒度小、粒径窄和分散均匀的特点,氮含量在36%以上.实验中发现,当SiCl4进料口在前,NH3进料口在后,且两个进料口均在高频等离子体尾焰处,经脱NH4Cl的产物中氮含量较高.而反应物NH3也不宜太过量,以NH3:SiCl4=8:1为好.Si3N4的晶型转变在1400“C下处理8h,效果较好
Keyword超细粉 氮化硅 高频等离子体 化学气相沉积
Document Type期刊论文
Version出版稿
Identifierhttp://ir.ipe.ac.cn/handle/122111/7796
Collection研究所(批量导入)
Recommended Citation
GB/T 7714
洪若瑜,李洪钟,李春忠,等. 高频等离子体化学气相沉积法制氮化硅超细粉的工艺研究[J]. 化工冶金,1996(03):273-277.
APA 洪若瑜,李洪钟,李春忠,&胡黎明.(1996).高频等离子体化学气相沉积法制氮化硅超细粉的工艺研究.化工冶金(03),273-277.
MLA 洪若瑜,et al."高频等离子体化学气相沉积法制氮化硅超细粉的工艺研究".化工冶金 .03(1996):273-277.
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