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等离子体法制备碳化硅超细粉末研究
戴学刚; 郑国梁; 荣金龙; 王建国; 张其雄
1996
Source Publication化工冶金
Issue04Pages:310-315
Abstract本文采用直流电弧等离子体法合成β-SiC超细粉末.产品纯度大于97%,平均粒径范围0.05~0.5μm,产率1km/h.此外,对其工业开发前景作了展望.
Keyword等离子体 碳化硅 超细粉末
Document Type期刊论文
Version出版稿
Identifierhttp://ir.ipe.ac.cn/handle/122111/7807
Collection研究所(批量导入)
Recommended Citation
GB/T 7714
戴学刚,郑国梁,荣金龙,等. 等离子体法制备碳化硅超细粉末研究[J]. 化工冶金,1996(04):310-315.
APA 戴学刚,郑国梁,荣金龙,王建国,&张其雄.(1996).等离子体法制备碳化硅超细粉末研究.化工冶金(04),310-315.
MLA 戴学刚,et al."等离子体法制备碳化硅超细粉末研究".化工冶金 .04(1996):310-315.
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