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Hydrogenation of Silicon Tetrachloride in Microwave Plasma
Alternative TitleChin. J. Chem. Eng.
Lu Zhenxi1,2; Zhang Weigang1
2014-02-01
Source PublicationCHINESE JOURNAL OF CHEMICAL ENGINEERING
ISSN1004-9541
Volume22Issue:2Pages:227-233
AbstractThis study investigated the hydrogenation of silicon tetrachloride (SiCl4) in microwave plasma. A new launcher of argon (Ar) and hydrogen (H-2) plasma was introduced to produce a non-thermodynamic equilibrium activation plasma. The plasma state exhibited a characteristic temperature related to the equilibrium constant, which was termed "Reactive Temperature" in this study. Thus, the hydrogenation of SiCl4 in the plasma could easily be handled with high conversion ratio and very high selectivity to trichlorosilane (SiHCl3). The effects of SiCl4/Ar and H-2/Ar ratios on the conversion were also investigated using a mathematical model developed to determine the optimum experimental parameters. The highest hydrogenation conversion ratio was produced at a H-2/SiCl4 molar ratio of 1, with mixtures of SiCl4 and H-2 to Ar molar ratio of 1.2 to 1.4. In this plasma, the special system pressure and incident power were required for the highest energy efficiency of hydrogenating SiCl4, while the optimum system pressure varies from 26.6 to 40 kPa depending on input power, and the optimum feed gas (H-2 and SiCl4) molar energy input was about 350 kJ.mol(-1).; This study investigated the hydrogenation of silicon tetrachloride (SiCl4) in microwave plasma. A new launcher of argon (Ar) and hydrogen (H-2) plasma was introduced to produce a non-thermodynamic equilibrium activation plasma. The plasma state exhibited a characteristic temperature related to the equilibrium constant, which was termed "Reactive Temperature" in this study. Thus, the hydrogenation of SiCl4 in the plasma could easily be handled with high conversion ratio and very high selectivity to trichlorosilane (SiHCl3). The effects of SiCl4/Ar and H-2/Ar ratios on the conversion were also investigated using a mathematical model developed to determine the optimum experimental parameters. The highest hydrogenation conversion ratio was produced at a H-2/SiCl4 molar ratio of 1, with mixtures of SiCl4 and H-2 to Ar molar ratio of 1.2 to 1.4. In this plasma, the special system pressure and incident power were required for the highest energy efficiency of hydrogenating SiCl4, while the optimum system pressure varies from 26.6 to 40 kPa depending on input power, and the optimum feed gas (H-2 and SiCl4) molar energy input was about 350 kJ.mol(-1).
KeywordHydrogenation Silicon Tetrachloride Non-thermodynamic Equilibrium Plasma Equilibrium Constant Plasma Temperature
SubtypeArticle
WOS HeadingsScience & Technology ; Technology
DOI10.1016/S1004-9541(14)60025-2
URL查看原文
Indexed BySCI
Language英语
WOS KeywordATMOSPHERIC-PRESSURE ; DISCHARGE
WOS Research AreaEngineering
WOS SubjectEngineering, Chemical
WOS IDWOS:000331476400016
Citation statistics
Cited Times:5[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Version出版稿
Identifierhttp://ir.ipe.ac.cn/handle/122111/8118
Collection研究所(批量导入)
Affiliation1.Chinese Acad Sci, Inst Proc Engn, State Key Lab Multiphase Complex Syst, Beijing 100190, Peoples R China
2.Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China
Recommended Citation
GB/T 7714
Lu Zhenxi,Zhang Weigang. Hydrogenation of Silicon Tetrachloride in Microwave Plasma[J]. CHINESE JOURNAL OF CHEMICAL ENGINEERING,2014,22(2):227-233.
APA Lu Zhenxi,&Zhang Weigang.(2014).Hydrogenation of Silicon Tetrachloride in Microwave Plasma.CHINESE JOURNAL OF CHEMICAL ENGINEERING,22(2),227-233.
MLA Lu Zhenxi,et al."Hydrogenation of Silicon Tetrachloride in Microwave Plasma".CHINESE JOURNAL OF CHEMICAL ENGINEERING 22.2(2014):227-233.
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