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PCVD法制取β-SiC超微粉末
郭家银; 郑国梁
1991
Source Publication化工冶金
Issue01Pages:1-7
Abstract本文以 CH_3SiCl_3为原料,利用 PCVD(Plasma Chemical Vapor Depo-sition)法制取了β—SiC 超微陶瓷粉末。平均粒径<0.1μm,SiC 含量可达到96%,氧含量可小于1.5%。实验探讨了粉末成分与诸因素关系;提供了粉末烧结性能的初步试验研究结果.
Keyword等离子体 气相化学反应 Β-sic 超微陶瓷粉末 烧结
Indexed ByCSCD
CSCD IDCSCD:149358
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Document Type期刊论文
Identifierhttp://ir.ipe.ac.cn/handle/122111/8791
Collection研究所(批量导入)
Recommended Citation
GB/T 7714
郭家银,郑国梁. PCVD法制取β-SiC超微粉末[J]. 化工冶金,1991(01):1-7.
APA 郭家银,&郑国梁.(1991).PCVD法制取β-SiC超微粉末.化工冶金(01),1-7.
MLA 郭家银,et al."PCVD法制取β-SiC超微粉末".化工冶金 .01(1991):1-7.
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