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WO_3表面的氧缺陷
吴述尧; 陈芸琪; 齐上雪; 姜兆学; 林彰达; 王志宽; 舒代萱
1986
Source Publication物理学报
Issue05Pages:662-666
Abstract用不同能量的Ar~+和H~+轰击WO_3表面,观察到W_(4f)峰的位移和加宽。通过谱分解处理得到相应于W_(4f)电子的W~(6+),W~(4+)和W~03个不同的双峰。用表面产生氧缺陷的机理解释了还原过程。UPS谱显示出氧缺陷的存在增加了靠近费密能级处的态密度。H_2O的吸附结果说明WO_3表面的活性与W~(5+)有关。
Keyword费密能 态密度 Wo_3 谱分解 机理解释 禁带 还原过程 光解水 阳极材料 水制氢
Document Type期刊论文
Identifierhttp://ir.ipe.ac.cn/handle/122111/9374
Collection研究所(批量导入)
Recommended Citation
GB/T 7714
吴述尧,陈芸琪,齐上雪,等. WO_3表面的氧缺陷[J]. 物理学报,1986(05):662-666.
APA 吴述尧.,陈芸琪.,齐上雪.,姜兆学.,林彰达.,...&舒代萱.(1986).WO_3表面的氧缺陷.物理学报(05),662-666.
MLA 吴述尧,et al."WO_3表面的氧缺陷".物理学报 .05(1986):662-666.
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